Pub Date : 2010-12-13DOI: 10.1109/INEC.2010.5424726
Qiangbin Wang, Hao Yan, D. Seo
Quantum dots (QDs) have attracted tremendous interest in biological applications, such as bioimaging, biolabeling, and biosensing, because of their advantages over organic fluorophores at high quantum yield (QY), size-tunable narrow emission, photostability, etc. To date, various strategies have been developed to obtain water-soluble QDs and QD bioconjugates, but these commonly require multiple steps to obtain the final products. Herein, we present a simple and robust one-step method for creating stable, water-soluble QD and QD-biomolecule conjugates. We demonstrate the successful implementation of this strategy by using mercaptopropyl acid and DNA molecules as model systems, but expect this could also be extended to other types of biomolecules.
{"title":"A synthetic strategy of quantum dot-bioconjugate","authors":"Qiangbin Wang, Hao Yan, D. Seo","doi":"10.1109/INEC.2010.5424726","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424726","url":null,"abstract":"Quantum dots (QDs) have attracted tremendous interest in biological applications, such as bioimaging, biolabeling, and biosensing, because of their advantages over organic fluorophores at high quantum yield (QY), size-tunable narrow emission, photostability, etc. To date, various strategies have been developed to obtain water-soluble QDs and QD bioconjugates, but these commonly require multiple steps to obtain the final products. Herein, we present a simple and robust one-step method for creating stable, water-soluble QD and QD-biomolecule conjugates. We demonstrate the successful implementation of this strategy by using mercaptopropyl acid and DNA molecules as model systems, but expect this could also be extended to other types of biomolecules.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"24 1","pages":"332-333"},"PeriodicalIF":0.0,"publicationDate":"2010-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88640717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424899
Kyu-Jin Cho, S. Hong
Equal channel angular pressing was carried out on Cu-Ag composites at room temperature. ECAPed Cu-Ag exhibited ultrafine structure with the shape and distribution of Ag phase dependent on the processing routes. In route A, the initial lamellae of Ag phase were elongated along the shear direction and developed into filaments whereas the initial lamellae became finer by fragmentation with no pronounced change of the shape in route Bc. The hardness of ECAPed Cu-Ag is greater than that of ECAPed Cu. The higher hardness in Cu-Ag is ascribed to the more effective matrix strengthening due to the dislocation storage at the interface and the precipitation hardening. The hardness of ECAPed Cu-Ag was lower than the drawn Cu-Ag at the same deformation strain because of the less effective refinement and elongation of the two-phase filamentary microstructure. The application of ECAP in Cu-Ag was found to be effective in the modification of structure, shape and distribution of phases in composite and the increase of the strength.
{"title":"Mechanical and electrical properties of Cu-Ag nanocomposites processed by equal channel angular pressing (ECAP)","authors":"Kyu-Jin Cho, S. Hong","doi":"10.1109/INEC.2010.5424899","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424899","url":null,"abstract":"Equal channel angular pressing was carried out on Cu-Ag composites at room temperature. ECAPed Cu-Ag exhibited ultrafine structure with the shape and distribution of Ag phase dependent on the processing routes. In route A, the initial lamellae of Ag phase were elongated along the shear direction and developed into filaments whereas the initial lamellae became finer by fragmentation with no pronounced change of the shape in route Bc. The hardness of ECAPed Cu-Ag is greater than that of ECAPed Cu. The higher hardness in Cu-Ag is ascribed to the more effective matrix strengthening due to the dislocation storage at the interface and the precipitation hardening. The hardness of ECAPed Cu-Ag was lower than the drawn Cu-Ag at the same deformation strain because of the less effective refinement and elongation of the two-phase filamentary microstructure. The application of ECAP in Cu-Ag was found to be effective in the modification of structure, shape and distribution of phases in composite and the increase of the strength.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"8 1","pages":"1291-1292"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73477650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424706
H. Yang, S. Yu, T. Wu
We investigate the effect of modification of ZnO nanorods surfaces with amorphous MgO layer on the lasing emission from ZnO nanorods.
研究了用无定形氧化镁层修饰ZnO纳米棒表面对ZnO纳米棒激光发射的影响。
{"title":"Enhanced UV lasing emission from ZnO-MgO core-shell structure","authors":"H. Yang, S. Yu, T. Wu","doi":"10.1109/INEC.2010.5424706","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424706","url":null,"abstract":"We investigate the effect of modification of ZnO nanorods surfaces with amorphous MgO layer on the lasing emission from ZnO nanorods.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"35 1","pages":"306-307"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74296760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424540
Xuan Liu, Qingsong Hu
Large-area silicon nanowire arrays are prepared successfully with mixed AgNO3 and HF solution by EMD method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3 and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers, and the equality of silicon nanowires with nano Au particles are better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of Ag+ and the removal of the oxidized Si solution by reacting with HF.
{"title":"Preparation of silicon nanowire arrays via electroless metal deposition","authors":"Xuan Liu, Qingsong Hu","doi":"10.1109/INEC.2010.5424540","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424540","url":null,"abstract":"Large-area silicon nanowire arrays are prepared successfully with mixed AgNO3 and HF solution by EMD method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3 and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers, and the equality of silicon nanowires with nano Au particles are better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of Ag+ and the removal of the oxidized Si solution by reacting with HF.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"6 1","pages":"85-86"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75426141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424938
S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee
In this study, the (GeSbSn)100-xCox films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)100-xCoxfilms and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)100-xCox films are decreased with Co content. It is found that the activation energy of the (GeSbSn)100-xCox films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.
{"title":"Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films","authors":"S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee","doi":"10.1109/INEC.2010.5424938","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424938","url":null,"abstract":"In this study, the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf>films and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films are decreased with Co content. It is found that the activation energy of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"16 1","pages":"1216-1217"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75653041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The composite films of amorphous and nanocrystalline Fe73.5Cu1Nb3Si13.5B9 powders/butyl rubber were prepared by pressing in the mold to shape. The piezomagnetic properties of composite films were studied in the temperature range of 20–50 Celsius degree with theshielding properties in the frequency band (30kHz–6000MHz) of electromagnetic wave. The results show that when the microstress below 0.09MPa and testing frequency below 200kHz, the piezomagnetic properties are the best and theirs piezomagnetic properties increase as temperatures increase, the piezomagnetic properties of amorphous composite films are the best at 40 Celsius degree. Within frequency band (30kHz–6000MHz) of electromagnetic wave, the films have good characteristics of shielding high-frequency and broad-frequency electromagnetic waves. The shielding properties are improved significantly as the content of powder or the thickness of materials increases. Shielding effectiveness above 15dB is obtained at certain experimental parameters.
{"title":"Piezomagnetic properties and shielding properties of amorphous and nanocrystalline powders / butyl rubber composite films","authors":"X. Xu, Zhenghou Zhu, Huizong Song, Zhenzhen Wan, H. Peng, Junfu Huang","doi":"10.1109/INEC.2010.5424766","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424766","url":null,"abstract":"The composite films of amorphous and nanocrystalline Fe73.5Cu1Nb3Si13.5B9 powders/butyl rubber were prepared by pressing in the mold to shape. The piezomagnetic properties of composite films were studied in the temperature range of 20–50 Celsius degree with theshielding properties in the frequency band (30kHz–6000MHz) of electromagnetic wave. The results show that when the microstress below 0.09MPa and testing frequency below 200kHz, the piezomagnetic properties are the best and theirs piezomagnetic properties increase as temperatures increase, the piezomagnetic properties of amorphous composite films are the best at 40 Celsius degree. Within frequency band (30kHz–6000MHz) of electromagnetic wave, the films have good characteristics of shielding high-frequency and broad-frequency electromagnetic waves. The shielding properties are improved significantly as the content of powder or the thickness of materials increases. Shielding effectiveness above 15dB is obtained at certain experimental parameters.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"384-385"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74387945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424687
Yuanjing Cui, Jingting Hu, Jiancan Yu, Jing-Shen Qiu, Liying Liu, Lei Xu, G. Qian
A novel alkoxysilane-functionalized push-pull chromophore was synthesized through a coupling reaction between a benzaldehyde-based chromophore, 4-aldehyde-4'-(N-ethyl-N-2-hydroxyethyl aminoazobenzene (BA) and 3-isocyanatopropyltriethoxysilane (ICTES). Followed by a hydrolysis and condensation process of the resultant alkoxysilane dye and tetraethoxysilane (TEOS), hybrid inorganic-organic materials were obtained. The hybrid materials exhibited excellent film homogeneity and optical clarity. Molecular structural and physical properties were characterized by FTIR, NMR, UV-vis spectroscopy, thermogravimetric analysis, and differential scanning calorimetry. Second harmonic generation and electro-optic modulation studies were also conducted on this material.
以苯甲醛为基色团，4-醛-4′-(n -乙基- n -2-羟乙基氨基偶氮苯(BA)和3-异氰基丙基三乙基氧基硅烷(ICTES)为偶联反应合成了一种新型的烷氧基硅烷功能化推拉色团。将合成的烷氧基硅烷染料和四乙氧基硅烷(TEOS)进行水解缩合，得到了无机-有机杂化材料。该杂化材料具有良好的薄膜均匀性和光学清晰度。采用红外光谱、核磁共振、紫外可见光谱、热重分析和差示扫描量热法对分子的结构和物理性质进行了表征。对该材料进行了二次谐波产生和电光调制的研究。
{"title":"Hybrid inorganic-organic films with Benzaldehyde-based chromophore for electro-optic device","authors":"Yuanjing Cui, Jingting Hu, Jiancan Yu, Jing-Shen Qiu, Liying Liu, Lei Xu, G. Qian","doi":"10.1109/INEC.2010.5424687","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424687","url":null,"abstract":"A novel alkoxysilane-functionalized push-pull chromophore was synthesized through a coupling reaction between a benzaldehyde-based chromophore, 4-aldehyde-4'-(N-ethyl-N-2-hydroxyethyl aminoazobenzene (BA) and 3-isocyanatopropyltriethoxysilane (ICTES). Followed by a hydrolysis and condensation process of the resultant alkoxysilane dye and tetraethoxysilane (TEOS), hybrid inorganic-organic materials were obtained. The hybrid materials exhibited excellent film homogeneity and optical clarity. Molecular structural and physical properties were characterized by FTIR, NMR, UV-vis spectroscopy, thermogravimetric analysis, and differential scanning calorimetry. Second harmonic generation and electro-optic modulation studies were also conducted on this material.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"17 1","pages":"281-282"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74508382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5424627
Xi Zhang, J. Kuo, M. Gu, Xiaofeng Fan, P. Bai, Q. Song, C. Q. Sun
Relativistic density functional theory calculations have been conducted to examine the effect of atomic under-coordination. The calculated results agree exceedingly well with experimental observations: skin-depth bond contraction, chain end stats polarization, potential well depression, core level shift, and the valence charge polarization of gold nanostructures. Consistency between calculations and experimental observations affirms the prediction of the bond-order-length-strength (BOLS) correlation theory [Sun CQ, Phys Rev B 69, 045105 (2004)], asserting that the under-coordinated surface atoms are indeed associated with local strain, quantum trap depression, charge densification and valence charge polarization and that the locally polarized and pinned electrons are responsible for the metal-insulator transition and magnetism present of gold nanoparticles.
用相对论密度泛函理论计算了原子欠配位的影响。计算结果与实验结果吻合得非常好:金纳米结构的键深收缩、链端状态极化、势阱下降、核心能级移动和价荷极化。计算与实验观测的一致性证实了键序-长度-强度(BOLS)相关理论的预测[Sun CQ, Phys Rev B 69, 045105(2004)]，断言低配位表面原子确实与局域应变、量子阱抑制、电荷致密化和价电荷极化以及局部极化和钉住电子是金纳米粒子的金属-绝缘体跃迁和磁性存在的原因。
{"title":"The valence charge polarization induced by the shorter and stronger bonds between under-coordinated gold atoms","authors":"Xi Zhang, J. Kuo, M. Gu, Xiaofeng Fan, P. Bai, Q. Song, C. Q. Sun","doi":"10.1109/INEC.2010.5424627","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424627","url":null,"abstract":"Relativistic density functional theory calculations have been conducted to examine the effect of atomic under-coordination. The calculated results agree exceedingly well with experimental observations: skin-depth bond contraction, chain end stats polarization, potential well depression, core level shift, and the valence charge polarization of gold nanostructures. Consistency between calculations and experimental observations affirms the prediction of the bond-order-length-strength (BOLS) correlation theory [Sun CQ, Phys Rev B 69, 045105 (2004)], asserting that the under-coordinated surface atoms are indeed associated with local strain, quantum trap depression, charge densification and valence charge polarization and that the locally polarized and pinned electrons are responsible for the metal-insulator transition and magnetism present of gold nanoparticles.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"197-199"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73687481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-03-04DOI: 10.1109/INEC.2010.5425138
K. Prashanthi, V. Palkar
we have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.
{"title":"Characterization of multiferroic thin films directly deposited on silicon for novel device applications","authors":"K. Prashanthi, V. Palkar","doi":"10.1109/INEC.2010.5425138","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425138","url":null,"abstract":"we have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"40 1","pages":"900-901"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74281633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work demonstrates a novel twin poly-Si thin film transistor (TFT) EEPROM that utilizes oxide for gate dielectric and nitride for electron trapping layer (O/N twin poly-Si EEPROM). This EEPROM has superior reliability because its nitride for electron trapping layer provides a better program/erase efficiency and retention. For endurance and retention, the memory window can be maintained 2.5 V after 103 program and erase (P/E) cycles, and the memory window can be maintained 2.5 V after 104 s at 85 °C. This investigation explores its feasibility in future active matrix liquid crystal display (AMLCD) system-on-panel (SOP) and 3D stacked Flash memory applications.
{"title":"Fabrication and characterization of twin poly-Si thin film transistors EEPROM with nitride trapping layer","authors":"Yung-Chun Wu, Min-Feng Hung, Ji-Hong Chiang, Lun-Jyun Chen, Chiang-Hung Chen","doi":"10.1109/INEC.2010.5424704","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424704","url":null,"abstract":"This work demonstrates a novel twin poly-Si thin film transistor (TFT) EEPROM that utilizes oxide for gate dielectric and nitride for electron trapping layer (O/N twin poly-Si EEPROM). This EEPROM has superior reliability because its nitride for electron trapping layer provides a better program/erase efficiency and retention. For endurance and retention, the memory window can be maintained 2.5 V after 103 program and erase (P/E) cycles, and the memory window can be maintained 2.5 V after 104 s at 85 °C. This investigation explores its feasibility in future active matrix liquid crystal display (AMLCD) system-on-panel (SOP) and 3D stacked Flash memory applications.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"14 1","pages":"635-636"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74557770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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