E. Geerlings, M. Rattunde, J. Schmitz, G. Kaufel, J. Wagner, D. Kallweit, H. Zappe
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引用次数: 1
Abstract
We report on GaSb-based quantum-well diode lasers in a micro-machined external cavity setup using the Littrow configuration. An electrostatically-actuated silicon- grating, optimized to achieve a wide tuning range in the 2.3 mum wavelength range, is used as tuning element. A tuning range of 82 nm could be realized. The maximum output power of the micro external cavity laser (muECL) was above 15 mW over the entire tuning range.
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