Strong Diffusion Suppression of Low Energy–Implanted Phosphorous in Germanium by N2 Co-Implantation

Abstract

/Ge interface, while phosphorous dose loss and diffusion to the bulk are strongly suppressed in comparison to Gesubstrate without nitrogen implantation. Possible physical mechanisms (involving phosphorous-vacancies or phosphorous-nitrogencomplexes, and end-of-range interstitials) that explain this result are presented and discussed.© The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative CommonsAttribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/),which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in anyway and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0061506ssl]All rights reserved.Manuscript submitted February 26, 2015; revised manuscript received April 9, 2015. Published April 21, 2015.