Comprehensive Computational Modelling Approach for Graphene FETs

Kuruva Hemanjaneyulu, Mamta Khaneja, A. Meersha, H. B. Variar, M. Shrivastava
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Abstract

Graphene has shown a great scope beyond the bulk silicon devices for future transistor applications. Even though it has undergone intensive investigations through experimental approach, there are no easy and time efficient computational approaches for analysing the graphene transistors. In this paper we provide methodology for simulating graphene transistors using conventional TCAD tools with appropriate model calibration. We demonstrate the calibration methodology along with few graphene FET simulations with the calibrated set-up.
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石墨烯场效应管的综合计算建模方法
石墨烯在未来的晶体管应用中显示出了巨大的应用范围。尽管已经通过实验方法进行了大量的研究,但目前还没有简单而高效的计算方法来分析石墨烯晶体管。在本文中,我们提供了使用传统的TCAD工具和适当的模型校准来模拟石墨烯晶体管的方法。我们演示了校准方法以及一些石墨烯场效应管模拟与校准设置。
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