Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937975
Sandeep Kumar, Pankaj Kumar, K. Kumari, S. Avasthi
This work presents a two-step liquid phase crystallization process for realizing large-grain epitaxial germanium (Ge) on silicon substrates. The process starts with amorphous Ge films on silicon (100) substrate which is subjected to a two-step annealing process. In the first step, films are heated to 950°C for 5 minutes, a temperature above the melting point of Ge. Next the films are allowed to cool down to 930°C and maintained at that temperature for 1 to 5 hours respectively in order to check its effect on the crystallization process. The 950°C for 5 mins and 930°C for 2 hours shows the optimum annealing conditions to achieve highly crystalline films. The surface morphologies of the annealed samples were characterized using scanning electron microscopy which shows grain sizes ranging from 2-5 $mu$m. The crystallinity of the films was confirmed using Raman spectroscopy and x-ray diffraction (XRD) measurements. Theta/2-theta XRD measurements of samples show the peak for Ge(400) at 66.3°. The degree of grain orientations along Ge(400) plane is further evaluated using the rocking curve in XRD measurements which shows full-width at half maximum height value of 0.08° (or 288 arc sec) along this plane for the optimum two-step annealing process condition.
{"title":"Optimization of controlled two-step liquid phase crystallization of Ge-on-Si","authors":"Sandeep Kumar, Pankaj Kumar, K. Kumari, S. Avasthi","doi":"10.1109/icee44586.2018.8937975","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937975","url":null,"abstract":"This work presents a two-step liquid phase crystallization process for realizing large-grain epitaxial germanium (Ge) on silicon substrates. The process starts with amorphous Ge films on silicon (100) substrate which is subjected to a two-step annealing process. In the first step, films are heated to 950°C for 5 minutes, a temperature above the melting point of Ge. Next the films are allowed to cool down to 930°C and maintained at that temperature for 1 to 5 hours respectively in order to check its effect on the crystallization process. The 950°C for 5 mins and 930°C for 2 hours shows the optimum annealing conditions to achieve highly crystalline films. The surface morphologies of the annealed samples were characterized using scanning electron microscopy which shows grain sizes ranging from 2-5 $mu$m. The crystallinity of the films was confirmed using Raman spectroscopy and x-ray diffraction (XRD) measurements. Theta/2-theta XRD measurements of samples show the peak for Ge(400) at 66.3°. The degree of grain orientations along Ge(400) plane is further evaluated using the rocking curve in XRD measurements which shows full-width at half maximum height value of 0.08° (or 288 arc sec) along this plane for the optimum two-step annealing process condition.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79758961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937998
Abhai Kumar, S. Nambiar, Rakshitha Kallega, P. Ranganath, S. Selvaraja
A Silicon Nitride assisted SU8 hybrid grating coupler is proposed as a means for coupling to single mode polymer waveguides. Using direct writing approach a patch grating coupler efficiency of -3.9 dB is experimentally demonstrated.
{"title":"Silicon Nitride assisted SU8 Grating for Polymer Waveguide Coupling","authors":"Abhai Kumar, S. Nambiar, Rakshitha Kallega, P. Ranganath, S. Selvaraja","doi":"10.1109/icee44586.2018.8937998","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937998","url":null,"abstract":"A Silicon Nitride assisted SU8 hybrid grating coupler is proposed as a means for coupling to single mode polymer waveguides. Using direct writing approach a patch grating coupler efficiency of -3.9 dB is experimentally demonstrated.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"5 3 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85478638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937931
Santosh Aparanji, H. Rajashekhar, Balaswamy Velpula, V. Supradeepa
In this work, we present a novel simple architecture of a high-efficiency forward-pumped Raman fiber laser based on efficient seeding of the Stokes wavelengths through a passive pump combiner. We demonstrate 52 W of power in 1480 nm band for a pump power of 109 W with high spectral purity.
{"title":"A simple high-efficiency forward-pumped Raman fiber laser","authors":"Santosh Aparanji, H. Rajashekhar, Balaswamy Velpula, V. Supradeepa","doi":"10.1109/icee44586.2018.8937931","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937931","url":null,"abstract":"In this work, we present a novel simple architecture of a high-efficiency forward-pumped Raman fiber laser based on efficient seeding of the Stokes wavelengths through a passive pump combiner. We demonstrate 52 W of power in 1480 nm band for a pump power of 109 W with high spectral purity.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"83 3 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77907696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938016
A. G. Anil, Praveen C Ramamurthy, S. Subramanian, Y. Sivry
Conjugated polymer based sensor materials are gaining attention because of their higher sensitivity, tunable selectivity, better lifetime and reusability. Higher thermal stability and resistance to photobleaching makes them potential candidates for fabrication of thin films, micro-chips and electrodes for sensors. A novel hexylthiophene based polymer has been synthesized for the sensitive detection of Fe3+ ions. The polymer solution in ethanol could detect the presence of 8 ppm of Fe3+ with a quenching efficiency of $sim 96$%. The Stern-Volmer plot showed positive deviation from linearity at higher analyte concentrations due to super amplified quenching. The prospect of the polymer to function as a chemoresistive sensor is currently being investigated.
{"title":"Hexylthiophene based Conjugated Polymer Metal-ion Sensor","authors":"A. G. Anil, Praveen C Ramamurthy, S. Subramanian, Y. Sivry","doi":"10.1109/icee44586.2018.8938016","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938016","url":null,"abstract":"Conjugated polymer based sensor materials are gaining attention because of their higher sensitivity, tunable selectivity, better lifetime and reusability. Higher thermal stability and resistance to photobleaching makes them potential candidates for fabrication of thin films, micro-chips and electrodes for sensors. A novel hexylthiophene based polymer has been synthesized for the sensitive detection of Fe3+ ions. The polymer solution in ethanol could detect the presence of 8 ppm of Fe3+ with a quenching efficiency of $sim 96$%. The Stern-Volmer plot showed positive deviation from linearity at higher analyte concentrations due to super amplified quenching. The prospect of the polymer to function as a chemoresistive sensor is currently being investigated.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"25 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77980436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937889
Hreedish Kakoty, Ambarish Ghosh
Optical trapping technique has been used for various purposes since its advent [1]. One of the interesting applications of optical trapping has been to manipulate large assemblies of colloidal particles. In this paper we investigate a defocussed optical tweezer created by a low numerical aperture objective whose focal plane is controlled by an external telescope assembly [2]. We observe the intensity profile of this trapping beam away from the focal plane and model this intensity distribution using Fresnel Kirchoff integral. We show a close match between our observations and theoretical distribution. We correlate this intensity profile with the potential of the optical trap for a small particle in Rayleigh regime. By comparing this potential with the thermal fluctuations we define a trapping width for small particles and show that it matches with our experimentally observed dimensions of assemblies of small colloids. This study shows that intensity distribution using Fresnel Kirchoff integral can be used to understand trapping of small particles.
{"title":"Intensity Distribution and Trapping Potential of a Defocussed Optical Tweezer","authors":"Hreedish Kakoty, Ambarish Ghosh","doi":"10.1109/icee44586.2018.8937889","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937889","url":null,"abstract":"Optical trapping technique has been used for various purposes since its advent [1]. One of the interesting applications of optical trapping has been to manipulate large assemblies of colloidal particles. In this paper we investigate a defocussed optical tweezer created by a low numerical aperture objective whose focal plane is controlled by an external telescope assembly [2]. We observe the intensity profile of this trapping beam away from the focal plane and model this intensity distribution using Fresnel Kirchoff integral. We show a close match between our observations and theoretical distribution. We correlate this intensity profile with the potential of the optical trap for a small particle in Rayleigh regime. By comparing this potential with the thermal fluctuations we define a trapping width for small particles and show that it matches with our experimentally observed dimensions of assemblies of small colloids. This study shows that intensity distribution using Fresnel Kirchoff integral can be used to understand trapping of small particles.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79769827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937916
K. Khanum, M. P. Kumar, Praveen C Ramamurthy
This study demonstrates a simple way of achieving nonwoven nanofiber mats of various conjugated polymers and small molecules possessing various optical absorption. The conjugated polymer studied are poly (3,4-ethylene dioxylene thiophene):poly(4-styrene sulfonic acid) (PEDOT:PSS) and poly 3-hexyl thiophene (P3HT). The conjugated small molecules considered are thiophene-2, 1,3-benzothiadiazole -thiophene (TBT) and 7, 9-di (thiophen-2-yl) 8H cyclopenta[a]acenaphthylen-8-one (DTCPA). The blend polymer used along with four conjugated materials for electrospinning is poly (ethylene oxide) PEO. Effect of optimized electrospinning and its parameters on the morphology and structure is evaluated. Thus with the free-standing colorful electroactive nanofiber mats an attempt towards solar-cloth has been presented.
{"title":"Optically Assorted Electrospun Nanofiber Mats of Electroactive Blends for Flexible Electronics","authors":"K. Khanum, M. P. Kumar, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937916","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937916","url":null,"abstract":"This study demonstrates a simple way of achieving nonwoven nanofiber mats of various conjugated polymers and small molecules possessing various optical absorption. The conjugated polymer studied are poly (3,4-ethylene dioxylene thiophene):poly(4-styrene sulfonic acid) (PEDOT:PSS) and poly 3-hexyl thiophene (P3HT). The conjugated small molecules considered are thiophene-2, 1,3-benzothiadiazole -thiophene (TBT) and 7, 9-di (thiophen-2-yl) 8H cyclopenta[a]acenaphthylen-8-one (DTCPA). The blend polymer used along with four conjugated materials for electrospinning is poly (ethylene oxide) PEO. Effect of optimized electrospinning and its parameters on the morphology and structure is evaluated. Thus with the free-standing colorful electroactive nanofiber mats an attempt towards solar-cloth has been presented.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"5 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84185284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8938027
Saima Cherukat, P. Basu, A. Kottantharayil
We report the optimization of screen-printed phosphorus dopant paste diffusion on monocrystalline silicon wafers. The uniform sheet resistance and spatial selectivity offered by this diffusion approach make it promising for selective emitter, bifacial and interdigitated back contact solar cells. The sheet resistance, dopant profile and electrical characteristics of dopant paste diffused samples have been analyzed and the performance is benchmarked against conventional phosphorus oxychloride diffusion.
{"title":"Screen Printed Phosphorus Dopant Paste Diffusion optimization for Silicon Solar Cell Applications","authors":"Saima Cherukat, P. Basu, A. Kottantharayil","doi":"10.1109/icee44586.2018.8938027","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938027","url":null,"abstract":"We report the optimization of screen-printed phosphorus dopant paste diffusion on monocrystalline silicon wafers. The uniform sheet resistance and spatial selectivity offered by this diffusion approach make it promising for selective emitter, bifacial and interdigitated back contact solar cells. The sheet resistance, dopant profile and electrical characteristics of dopant paste diffused samples have been analyzed and the performance is benchmarked against conventional phosphorus oxychloride diffusion.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"62 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80974514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937906
Manjunath Manuvinakurake, U. Gandhi, Umapathy Mangalnathan, M. Nayak
Pressure sensors with good performance characteristics such as high sensitivity, repeatable output, wide range, and which can be manufactured cost effectively are highly desirable for pressure sensing applications. Nanomaterials are known to be promising building blocks for innovative Pressure sensors with enhanced performances and devices based on several representative nanostructures such as nanoparticles, nanowires, nanotubes, and graphene have been reported. Among nanomaterials rGO (Reduced Graphene oxide) offers an alternative option for addressing the increased demand for scalable and low-cost pressure sensors because of its ease of synthesis. In the proposed work we present a stainless steel mechanical structure along with rGO strain gauge based pressure sensor for both static and dynamic pressure sensing applications. The performance of the sensor is evaluated experimentally and is compared against a standard strain gauge for a pressure range of 0 to 20 bar. The developed sensor exhibits a pressure sensitivity of 1.19 $Omega$/bar, with gauge factor of 120 for static pressure and as well as dynamic pressure. The sensors vital characteristics such as peak output, rise time and the response time were 6.2 mV, 1.52 ms, and 0.43 ms. The high sensitivity and a wide sensing range enable it for a broad variety of applications.
{"title":"Reduced Graphene oxide strain gauge sensor for dynamic pressure sensing","authors":"Manjunath Manuvinakurake, U. Gandhi, Umapathy Mangalnathan, M. Nayak","doi":"10.1109/icee44586.2018.8937906","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937906","url":null,"abstract":"Pressure sensors with good performance characteristics such as high sensitivity, repeatable output, wide range, and which can be manufactured cost effectively are highly desirable for pressure sensing applications. Nanomaterials are known to be promising building blocks for innovative Pressure sensors with enhanced performances and devices based on several representative nanostructures such as nanoparticles, nanowires, nanotubes, and graphene have been reported. Among nanomaterials rGO (Reduced Graphene oxide) offers an alternative option for addressing the increased demand for scalable and low-cost pressure sensors because of its ease of synthesis. In the proposed work we present a stainless steel mechanical structure along with rGO strain gauge based pressure sensor for both static and dynamic pressure sensing applications. The performance of the sensor is evaluated experimentally and is compared against a standard strain gauge for a pressure range of 0 to 20 bar. The developed sensor exhibits a pressure sensitivity of 1.19 $Omega$/bar, with gauge factor of 120 for static pressure and as well as dynamic pressure. The sensors vital characteristics such as peak output, rise time and the response time were 6.2 mV, 1.52 ms, and 0.43 ms. The high sensitivity and a wide sensing range enable it for a broad variety of applications.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"5 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90222182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937895
Amruta Ranjan Behera, H. Shaik, G. M. Rao, R. Pratap
Buckled beams show interesting dynamic behaviour due to geometric nonlinearities present in them. They present a novel platform for study of nonlinear phenomena. Since the buckled deflection is governed by the magnitude of residual stress present in the beam, incorporating a provision for tweaking the state of stress can facilitate experimental investigation of nonlinear behaviour. In this work, we use metal-coated, buckled, micromechanical beams as the structural platform and by applying an appropriate voltage to the thin metal layer, we alter their state of stress. We measure the natural frequencies of the beam at each applied voltage and study how the frequencies evolve with change in the resulting residual stress. As the applied voltage increases, the first and second natural frequency shift close to each other and a crossover occurs between them. Near the crossover point, the mode shapes are distorted as a result of modal interactions.
{"title":"Experimental Investigation of Dynamic Characteristics of Metal Coated Buckled Micro-Beams with Electrothermal Modulation of Residual Stress","authors":"Amruta Ranjan Behera, H. Shaik, G. M. Rao, R. Pratap","doi":"10.1109/icee44586.2018.8937895","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937895","url":null,"abstract":"Buckled beams show interesting dynamic behaviour due to geometric nonlinearities present in them. They present a novel platform for study of nonlinear phenomena. Since the buckled deflection is governed by the magnitude of residual stress present in the beam, incorporating a provision for tweaking the state of stress can facilitate experimental investigation of nonlinear behaviour. In this work, we use metal-coated, buckled, micromechanical beams as the structural platform and by applying an appropriate voltage to the thin metal layer, we alter their state of stress. We measure the natural frequencies of the beam at each applied voltage and study how the frequencies evolve with change in the resulting residual stress. As the applied voltage increases, the first and second natural frequency shift close to each other and a crossover occurs between them. Near the crossover point, the mode shapes are distorted as a result of modal interactions.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90444080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-12-01DOI: 10.1109/icee44586.2018.8937992
R. Soman, S. Raghavan, N. Bhat
A FinFET device architecture is effective in realising normally off operation in AlxGa(1-x)N/GaN HEMTs with low on resistance and increased gate control. This paper discuses simulation and experimental study of normally off AlxGa(1-x)N/GaN FinFET devices. Atlas silvaco simulator is used to carry out electrostatic simulations to demonstrate normally off operation in AlxGa(1-x)N/GaN FinFETs, by considering the tri-gate induced depletion effect on 2DEG. FinFET devices are fabricated with the understanding gained from simulation studies. The fin width, height and length of the fabricated device were 80 nm, 70 nm abd 1.5 µm respectively. The fabricated device exhibited a threshold voltage of 2.5 V with a maximum drain current of 260 mA/mm at a gate overdrive voltage of 2.5 V. A maximum field effect mobility of 130 cm2/Vs is achieved for the fabricated FinFET device.
{"title":"Normally off AlGaN/GaN FinFET devices on Si substrate","authors":"R. Soman, S. Raghavan, N. Bhat","doi":"10.1109/icee44586.2018.8937992","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937992","url":null,"abstract":"A FinFET device architecture is effective in realising normally off operation in AlxGa(1-x)N/GaN HEMTs with low on resistance and increased gate control. This paper discuses simulation and experimental study of normally off AlxGa(1-x)N/GaN FinFET devices. Atlas silvaco simulator is used to carry out electrostatic simulations to demonstrate normally off operation in AlxGa(1-x)N/GaN FinFETs, by considering the tri-gate induced depletion effect on 2DEG. FinFET devices are fabricated with the understanding gained from simulation studies. The fin width, height and length of the fabricated device were 80 nm, 70 nm abd 1.5 µm respectively. The fabricated device exhibited a threshold voltage of 2.5 V with a maximum drain current of 260 mA/mm at a gate overdrive voltage of 2.5 V. A maximum field effect mobility of 130 cm2/Vs is achieved for the fabricated FinFET device.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"6 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85939314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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