{"title":"High performance diffused InGaAs JFETs in OEICs","authors":"C. Mansfield, D. Newson, P. Birdsall, J. Quayle","doi":"10.1109/ICIPRM.1991.147461","DOIUrl":null,"url":null,"abstract":"The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"1 1","pages":"660-663"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147461","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The development of highly uniform diffused InGaAs JFETs for use in vertically integrated optoelectronic integrated circuits (OEICs) is discussed. The devices have been integrated with both PIN diodes and ridge-waveguide lasers. OEIC fabrication and OEIC receiver performance are discussed.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
