Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147451
A. Katz
The application of the rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD) technique to the deposition of non-semiconductor thin-layer materials necessary for producing metal contacts to InP-based microelectronic devices is discussed. Both dielectric (SiO/sub 2/) and semimetal (TiN/sub x/) films were deposited. The two processes were realized in low pressures (5-30 torr), relatively low temperatures (350-550 degrees C), and short durations (1-200 s), exhibiting rapid growth kinetics and uniform deposited film morphology. The influence of the process parameters on the two film properties is described, and optimum deposition conditions are identified. Contacts that were prepared by RT-LPMOCVD of the TiN/sub x/ onto p-InGaAs layer using etched patterns in RT-LPCVD-SiO/sub 2/ layer are characterized as ohmic contacts.<>
{"title":"Rapid thermal low pressure (metallorganic) chemical vapor deposition of thin films onto InP","authors":"A. Katz","doi":"10.1109/ICIPRM.1991.147451","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147451","url":null,"abstract":"The application of the rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD) technique to the deposition of non-semiconductor thin-layer materials necessary for producing metal contacts to InP-based microelectronic devices is discussed. Both dielectric (SiO/sub 2/) and semimetal (TiN/sub x/) films were deposited. The two processes were realized in low pressures (5-30 torr), relatively low temperatures (350-550 degrees C), and short durations (1-200 s), exhibiting rapid growth kinetics and uniform deposited film morphology. The influence of the process parameters on the two film properties is described, and optimum deposition conditions are identified. Contacts that were prepared by RT-LPMOCVD of the TiN/sub x/ onto p-InGaAs layer using etched patterns in RT-LPCVD-SiO/sub 2/ layer are characterized as ohmic contacts.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"54 1","pages":"614-620"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74152990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147412
M. Mckee, R. Stall, B. Rose, J. Kim, J.H. Lee, D. Bang, J.R. Kim, Y.H. Inn, S.H. Lee, Y. Cho
High-quality In/sub 0.5/Ga/sub 0.5/P and InGaAlP layers have been grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) in a vertical, high-speed rotating-disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single 50-mm-diameter wafer at the center of a 5-in-diameter wafer carrier and on three 50-mm-diameter GaAs wafers symmetrically placed on a 5-in-diameter carrier. The effects of temperature and V/III ratio on morphology and composition are discussed. Initial results on InGaAlP/InGaP DH lasers are presented.<>
{"title":"Highly uniform InGaAlP/InGaP/GaAs structures by low pressure MOVPE","authors":"M. Mckee, R. Stall, B. Rose, J. Kim, J.H. Lee, D. Bang, J.R. Kim, Y.H. Inn, S.H. Lee, Y. Cho","doi":"10.1109/ICIPRM.1991.147412","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147412","url":null,"abstract":"High-quality In/sub 0.5/Ga/sub 0.5/P and InGaAlP layers have been grown by low-pressure metalorganic vapor-phase epitaxy (MOVPE) in a vertical, high-speed rotating-disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single 50-mm-diameter wafer at the center of a 5-in-diameter wafer carrier and on three 50-mm-diameter GaAs wafers symmetrically placed on a 5-in-diameter carrier. The effects of temperature and V/III ratio on morphology and composition are discussed. Initial results on InGaAlP/InGaP DH lasers are presented.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"5 1","pages":"460-463"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75566264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147310
R. Holmstrom, E. Meland, J. Schlafer, W. Powazinik
A process that permits the controllable fabrication of buried heterostructure (BH) lasers with <1.0 mu m wide active layers and 0.1-0.2 mu m of lateral cladding and achieves the high photon densities and low parasitics necessary for high resonance frequency and modulation bandwidth lasers is described. The process may be used with bulk heterostructure, quantum well, and distributed feedback (DFB) grated structures. Control of critical dimensions to +or-0.1 mu m can be realized using the process. The process development for fabrication of a 1.3 mu m or 1.5 mu m wavelength high frequency laser is discussed.<>
一种允许可控制造埋藏异质结构(BH)激光器的工艺
{"title":"New fabrication method for high frequency InP/InGaAsP buried heterostructure semiconductor lasers","authors":"R. Holmstrom, E. Meland, J. Schlafer, W. Powazinik","doi":"10.1109/ICIPRM.1991.147310","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147310","url":null,"abstract":"A process that permits the controllable fabrication of buried heterostructure (BH) lasers with <1.0 mu m wide active layers and 0.1-0.2 mu m of lateral cladding and achieves the high photon densities and low parasitics necessary for high resonance frequency and modulation bandwidth lasers is described. The process may be used with bulk heterostructure, quantum well, and distributed feedback (DFB) grated structures. Control of critical dimensions to +or-0.1 mu m can be realized using the process. The process development for fabrication of a 1.3 mu m or 1.5 mu m wavelength high frequency laser is discussed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"36 1","pages":"130-133"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73988578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147334
C. P. Seltzer, M. Bagley, G. Sherlock, D. Elton, S. Perrin, D. M. Cooper
Multiple quantum well (MQW) external cavity lasers and optical amplifiers operating in the 1.3 mu m optical fiber communications window are described. The device designs and fabrications are discussed. It is demonstrated that MQW devices offer enhanced characteristics when compared with conventional bulk devices. An MQW laser with a single facet coat in an external cavity was measured to have a tuning range of 160 nm from 1.255 mu m to 1.417 mu m. The device had a peak power of over 40 mW at 1.336 mu m, and a side mode suppression ratio of more than 40 dB. An optical amplifier with a length of 500 mu m had a bandwidth of 110 nm, a 18 dB single-pass gain, and saturated output power of 14 dBm (25 mW).<>
{"title":"Properties of facet-coated 1.3 mu m InGaAsP/InP MQW lasers","authors":"C. P. Seltzer, M. Bagley, G. Sherlock, D. Elton, S. Perrin, D. M. Cooper","doi":"10.1109/ICIPRM.1991.147334","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147334","url":null,"abstract":"Multiple quantum well (MQW) external cavity lasers and optical amplifiers operating in the 1.3 mu m optical fiber communications window are described. The device designs and fabrications are discussed. It is demonstrated that MQW devices offer enhanced characteristics when compared with conventional bulk devices. An MQW laser with a single facet coat in an external cavity was measured to have a tuning range of 160 nm from 1.255 mu m to 1.417 mu m. The device had a peak power of over 40 mW at 1.336 mu m, and a side mode suppression ratio of more than 40 dB. An optical amplifier with a length of 500 mu m had a bandwidth of 110 nm, a 18 dB single-pass gain, and saturated output power of 14 dBm (25 mW).<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"18 1","pages":"192-195"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78505037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147365
F. Mosel, A. Seidl, D. Hofmann, G. Muller
The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.<>
{"title":"LEC-growth and characterization of n- and p-type Fe-doped InP","authors":"F. Mosel, A. Seidl, D. Hofmann, G. Muller","doi":"10.1109/ICIPRM.1991.147365","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147365","url":null,"abstract":"The growth of n- and p-type Fe doped InP crystals using the liquid encapsulated Czochralski (LEC) technique by means of co-doping with Zn and Te, respectively, is discussed. The incorporation of the dopants was examined by chemical, electrical and optical analysis. The electronic transport properties of the InP:Fe,Zn crystals are investigated by comparing Hall effect measurements and theoretical calculations indicating a partial compensation of the Zn atoms by a deep donor.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"8 1","pages":"331-334"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76274183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147419
K. Inubushi, S. Sakai, T. Hyakudai, Y. Shintani
The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on
研究了传统液相外延(LPE)生长中从衬底到熔体的电流对InAsP性能的影响
{"title":"Current-controlled liquid phase epitaxy of InAsP on InP substrates","authors":"K. Inubushi, S. Sakai, T. Hyakudai, Y. Shintani","doi":"10.1109/ICIPRM.1991.147419","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147419","url":null,"abstract":"The effects of the current flow from the substrate to the melt in conventional liquid-phase-epitaxial (LPE) growth of InAsP on","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"54 1","pages":"488-491"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72806891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147332
P. Thijs, J. Binsma, E. Young, W.M.E. van Gils
It is demonstrated that high performance lasers can be obtained not only with compressively strained quantum wells (QWs) but also with tensile strained QWs. In addition to low threshold current (density) and high power operation, the tensile strained multiple quantum well semi-insulating planar buried heterostructure (MQW SIPBH) lasers show excellent high temperature operation (up to 140 degrees C). Compressively strained MQW SIPBH lasers are found to operate CW at record low threshold current values (0.8 mA) and record high output power (325 mW). It is concluded that both the band structure modifications induced by the strain and the quantum confinement. as well as the effective current confinement by means of semi-insulating InP, result in very high performance strained-layer MQW-SIPBH lasers.<>
{"title":"High power and high temperature operation of 1.5 mu m wavelength strained-layer InGaAs/InGaAsP SIPBH lasers","authors":"P. Thijs, J. Binsma, E. Young, W.M.E. van Gils","doi":"10.1109/ICIPRM.1991.147332","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147332","url":null,"abstract":"It is demonstrated that high performance lasers can be obtained not only with compressively strained quantum wells (QWs) but also with tensile strained QWs. In addition to low threshold current (density) and high power operation, the tensile strained multiple quantum well semi-insulating planar buried heterostructure (MQW SIPBH) lasers show excellent high temperature operation (up to 140 degrees C). Compressively strained MQW SIPBH lasers are found to operate CW at record low threshold current values (0.8 mA) and record high output power (325 mW). It is concluded that both the band structure modifications induced by the strain and the quantum confinement. as well as the effective current confinement by means of semi-insulating InP, result in very high performance strained-layer MQW-SIPBH lasers.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"22 1","pages":"184-187"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72808292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147437
B. Bollig, R. Iyer, D. Lile
Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200 degrees C.<>
{"title":"Spectral photoluminescence and Raman investigations of surface treatments on InP","authors":"B. Bollig, R. Iyer, D. Lile","doi":"10.1109/ICIPRM.1991.147437","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147437","url":null,"abstract":"Results of photoluminescence (PL) and Raman spectroscopy measurements on the effects of different chemical and thermal treatments on the surface properties of InP are presented. From the Raman spectra, values of the surface potential and depletion width are calculated, which allow values of surface recombination velocity to be extracted from the PL data. The PL data provide unambiguous confirmation of the degradation of the unprotected InP surface at temperatures over 200 degrees C.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"40 1","pages":"555-558"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81754348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147347
M. Matsuda, Y. Kotaki, H. Ishikawa, O. Wada
An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<>
{"title":"Reactively ion etched nonuniform-depth grating for advanced DFB lasers","authors":"M. Matsuda, Y. Kotaki, H. Ishikawa, O. Wada","doi":"10.1109/ICIPRM.1991.147347","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147347","url":null,"abstract":"An ethane (C/sub 2/H/sub 2/) reactive ion etching (RIE) technique that offers smooth-etched morphology, high controllability of depth, and anisotropic geometries for forming a nonuniform-depth grating on an InP substrate is discussed. The fabrication of a lambda /4-shifted multiple quantum well (MQW) distributed feedback (DFB) laser with a 900 mu m cavity and a nonuniform-depth grating is described. It is shown that the larger threshold gain difference predicted by theory is obtained despite strong hole-burning.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"25 20 1","pages":"256-259"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82888735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1991-04-08DOI: 10.1109/ICIPRM.1991.147447
K. Furuya, Y. Miyamoto
The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed.<>
{"title":"Advanced growth/processing for quantum transistors","authors":"K. Furuya, Y. Miyamoto","doi":"10.1109/ICIPRM.1991.147447","DOIUrl":"https://doi.org/10.1109/ICIPRM.1991.147447","url":null,"abstract":"The control of electron transport by using the coherent interaction between the electron and artificially formed potential structure is discussed. The principle of the electron wave diffraction transistor is explained. Fabrication of GaInAs/InP nanometer grating for coherent electron devices is described. Extending the concept of the coherent interaction between the electron and the potential structure, the use of the coherent interaction between the electron and impurity ions placed in the semiconductor crystal according to a design is proposed.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"3 1","pages":"596-601"},"PeriodicalIF":0.0,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90201962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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