Modification of adhesion forces in multiple layers of transition metal dichalcogenides using illumination for micro-actuators

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Pub Date : 2015-06-21 DOI:10.1109/TRANSDUCERS.2015.7181201

N. I. Mou, M. Tabib-Azar

{"title":"Modification of adhesion forces in multiple layers of transition metal dichalcogenides using illumination for micro-actuators","authors":"N. I. Mou, M. Tabib-Azar","doi":"10.1109/TRANSDUCERS.2015.7181201","DOIUrl":null,"url":null,"abstract":"Surface adhesion forces in few layers of layered transition metal dichalcogenides (ReS2, NbS2, n-type WSe2, MoS2, p-type MoSe2, TaS2) hexagonal BN (hBN) and graphene were determined using atomic force microscope with conducting silicon tip in dark and under illumination to identify material for integrated optical sensor in NEMS/MEMS switches. In all cases the surface adhesion forces increased under illumination. WSe2, an indirect band gap with 1.66 eV energy, showed the largest change of ~165% in its adhesion force. Hexagonal BN, a wide band gap energy material of 5.5 eV, showed the smallest change of 7.2% comparable to changes in our control samples of 90 nm SiO2 on Si and 100 nm Au on SiO2/Si. NbS2 and graphene, samples with the smallest energy band gaps, respectively showed 54.8% and 8.4% increase in surface adhesion forces under illumination.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TRANSDUCERS.2015.7181201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

Surface adhesion forces in few layers of layered transition metal dichalcogenides (ReS₂, NbS₂, n-type WSe₂, MoS₂, p-type MoSe₂, TaS₂) hexagonal BN (hBN) and graphene were determined using atomic force microscope with conducting silicon tip in dark and under illumination to identify material for integrated optical sensor in NEMS/MEMS switches. In all cases the surface adhesion forces increased under illumination. WSe₂, an indirect band gap with 1.66 eV energy, showed the largest change of ~165% in its adhesion force. Hexagonal BN, a wide band gap energy material of 5.5 eV, showed the smallest change of 7.2% comparable to changes in our control samples of 90 nm SiO₂ on Si and 100 nm Au on SiO₂/Si. NbS₂ and graphene, samples with the smallest energy band gaps, respectively showed 54.8% and 8.4% increase in surface adhesion forces under illumination.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

用微致动器照明改变多层过渡金属二硫化物的附着力

为了确定NEMS/MEMS开关中集成光学传感器的材料，在黑暗和光照条件下，利用带导电硅尖端的原子力显微镜测定了六方BN (hBN)和石墨烯在多层过渡金属二硫化物(ReS2、NbS2、n型WSe2、MoS2、p型MoSe2、TaS2)中的表面附着力。在所有情况下，表面附着力在光照下增加。WSe2为间接带隙，能量为1.66 eV，其附着力变化最大，约为165%。六方BN是一种5.5 eV的宽带隙能材料，与90 nm SiO2在Si上和100 nm Au在SiO2/Si上的对照样品相比，变化最小，为7.2%。能带隙最小的NbS2和石墨烯样品在光照下表面附着力分别提高了54.8%和8.4%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)

自引率

0.00%

发文量