Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181055
A. Han, A. R. Cho, S. Ju, B. Yoon, S. Lee, T. Kim, J. Bu, C. Ji
This paper presents the design, fabrication, and measurement results of an electromagnetic biaxial vector-graphic scanning micromirror. Instead of utilizing locally distributed magnetic fields from multiple magnets, radial magnetic field from concentric magnet assembly and unique coil geometry have been used to realize independent scan along two perpendicular axes irrespective of operation frequency. Proposed actuation mechanism also enables the use of a compact non-hermetic polymer-based package due to large driving torque and simple structure without any gap-closing microstructures. The magnet assembly is placed under the micromirror die with passive alignment and gap control during assembly process. Mechanical half scan angle of 11.6° and 3.8° have been achieved at DC current of 250mA and 400mA for horizontal and vertical scans, respectively.
{"title":"Biaxial vector-graphic scanning micromirror using radial magnetic field","authors":"A. Han, A. R. Cho, S. Ju, B. Yoon, S. Lee, T. Kim, J. Bu, C. Ji","doi":"10.1109/TRANSDUCERS.2015.7181055","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181055","url":null,"abstract":"This paper presents the design, fabrication, and measurement results of an electromagnetic biaxial vector-graphic scanning micromirror. Instead of utilizing locally distributed magnetic fields from multiple magnets, radial magnetic field from concentric magnet assembly and unique coil geometry have been used to realize independent scan along two perpendicular axes irrespective of operation frequency. Proposed actuation mechanism also enables the use of a compact non-hermetic polymer-based package due to large driving torque and simple structure without any gap-closing microstructures. The magnet assembly is placed under the micromirror die with passive alignment and gap control during assembly process. Mechanical half scan angle of 11.6° and 3.8° have been achieved at DC current of 250mA and 400mA for horizontal and vertical scans, respectively.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89420498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181361
T. Sekiya, T. Sasaki, K. Hane
Combination of GaN devices with Si devices is promising for the future hybrid integration in optical MEMS such as embedded light sources with electronic circuits. However, GaN optical waveguides are not directly formed on Si substrate because the refractive index of GaN is lower than that of Si. In this research, a GaN layer is grown epitaxially on a Si substrate and GaN freestanding waveguides are fabricated on the Si substrate by etching the Si substrate with XeF2. The waveguides are supported by bridge structures. Light wave propagation is simulated using finite-difference time-domain (FDTD) method. The GaN waveguides are patterned by electron beam lithography using a Cl2 plasma and the etching properties are examined. The waveguide properties such as loss are measured at blue and infrared wavelengths.
{"title":"GaN freestanding waveguides on Si substrate for Si/GaN hybrid photonic integration","authors":"T. Sekiya, T. Sasaki, K. Hane","doi":"10.1109/TRANSDUCERS.2015.7181361","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181361","url":null,"abstract":"Combination of GaN devices with Si devices is promising for the future hybrid integration in optical MEMS such as embedded light sources with electronic circuits. However, GaN optical waveguides are not directly formed on Si substrate because the refractive index of GaN is lower than that of Si. In this research, a GaN layer is grown epitaxially on a Si substrate and GaN freestanding waveguides are fabricated on the Si substrate by etching the Si substrate with XeF2. The waveguides are supported by bridge structures. Light wave propagation is simulated using finite-difference time-domain (FDTD) method. The GaN waveguides are patterned by electron beam lithography using a Cl2 plasma and the etching properties are examined. The waveguide properties such as loss are measured at blue and infrared wavelengths.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83295803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181133
H. Liu, Y. Yang, J. Zhang
This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to prepare an oxide layer of 5μm containing multiple and large interfaces. Our devices were irradiated by γ-rays of 60Co at 2Gy per minute for 2hrs and thermally stimulated current (TSC) method was used to determine the readout of dosimeters. Results show that there is a peak current about 450nA, indicating a total TSC charge of 158μC and sensitivity of 5.5nC/mm2·Gy, which is 40 times the sensitivity of previous MOS dosimeters.
{"title":"A novel MOS radiation dosimeter based on the MEMS-made oxide layer","authors":"H. Liu, Y. Yang, J. Zhang","doi":"10.1109/TRANSDUCERS.2015.7181133","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181133","url":null,"abstract":"This paper reports a novel MOS dosimeter with a very thick and defect-rich oxide layer fabricated by MEMS technology. We combined deep-reactive-ion etching (DRIE), thermal oxidation and LPCVD to prepare an oxide layer of 5μm containing multiple and large interfaces. Our devices were irradiated by γ-rays of 60Co at 2Gy per minute for 2hrs and thermally stimulated current (TSC) method was used to determine the readout of dosimeters. Results show that there is a peak current about 450nA, indicating a total TSC charge of 158μC and sensitivity of 5.5nC/mm2·Gy, which is 40 times the sensitivity of previous MOS dosimeters.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83058277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181090
J. Segovia-Fernandez, C. Xu, C. Cassella, G. Piazza
This paper presents and experimentally validates a new numerical approach to accurately model anchor losses in MEMS resonators with undercut suspensions. This method is an alternative to the use of Perfectly Matched Layers (PMLs) and excels at predicting Q for those cases in which highly reflective boundaries are present. The proposed finite element method (FEM) imposes fixed-constraints (FC) at the edges of the released regions and the Q is calculated as the ratio of strain energy in both resonator and anchors and the total acoustic energy transferred to the substrate. This new approach is compared to the results obtained by using PML conditions and validated experimentally through measurement of 216 AlN resonators with resonance frequencies (fr) around 60 MHz. The comparison shows that the proposed numerical technique has a similar accuracy to PML in predicting Q, but it is superior to it when reflections from the boundaries become relevant.
{"title":"An alternative technique to Perfectly Matched Layers to model anchor losses in MEMS resonators with undercut suspensions","authors":"J. Segovia-Fernandez, C. Xu, C. Cassella, G. Piazza","doi":"10.1109/TRANSDUCERS.2015.7181090","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181090","url":null,"abstract":"This paper presents and experimentally validates a new numerical approach to accurately model anchor losses in MEMS resonators with undercut suspensions. This method is an alternative to the use of Perfectly Matched Layers (PMLs) and excels at predicting Q for those cases in which highly reflective boundaries are present. The proposed finite element method (FEM) imposes fixed-constraints (FC) at the edges of the released regions and the Q is calculated as the ratio of strain energy in both resonator and anchors and the total acoustic energy transferred to the substrate. This new approach is compared to the results obtained by using PML conditions and validated experimentally through measurement of 216 AlN resonators with resonance frequencies (fr) around 60 MHz. The comparison shows that the proposed numerical technique has a similar accuracy to PML in predicting Q, but it is superior to it when reflections from the boundaries become relevant.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77271190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181157
M. Ochoa, J. Zhou, R. Rahimi, V. Badwaik, D. Thompson, B. Ziaie
We have developed a simple technique for fabricating polymeric microneedles of complex geometries. We achieve this by coupling 3D printing technology with an isotropic shrinkage technique, which effectively enhances the current resolution limits of 3D printing by at least five fold. The technique consists of transferring 3D printed patterns to a hydrogel which is subsequently shrunk by up to 40% within 12 hours. The process can be repeated for further shrinkage/refinement. Needle patterns are then transferred to a biodegradable polymer (PVP), resulting in microneedles which are sufficiently sharp (tips down to 9.6 μm radius of curvature) to penetrate porcine skin and deliver loaded/embedded chemicals.
{"title":"Rapid 3D-print-and-shrink fabrication of biodegradable microneedles with complex geometries","authors":"M. Ochoa, J. Zhou, R. Rahimi, V. Badwaik, D. Thompson, B. Ziaie","doi":"10.1109/TRANSDUCERS.2015.7181157","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181157","url":null,"abstract":"We have developed a simple technique for fabricating polymeric microneedles of complex geometries. We achieve this by coupling 3D printing technology with an isotropic shrinkage technique, which effectively enhances the current resolution limits of 3D printing by at least five fold. The technique consists of transferring 3D printed patterns to a hydrogel which is subsequently shrunk by up to 40% within 12 hours. The process can be repeated for further shrinkage/refinement. Needle patterns are then transferred to a biodegradable polymer (PVP), resulting in microneedles which are sufficiently sharp (tips down to 9.6 μm radius of curvature) to penetrate porcine skin and deliver loaded/embedded chemicals.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80151429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181258
M. F. Hossain, H. Yoon, J. Y. Park
In this work, hydrothermally reduced graphene oxide (TRGO) was developed with environment friendly reducing agent by optimum time due to exfoliate easily in solution. Two distributed sensing electrodes connected in series are decorated with TRGO added platinum nanoparticles (PtNP) and enzyme composites with nafion, which integrated in a single chip for effectively glucose sensing. The fabricated biosensor exhibited good amperometric response to glucose with a sensitivity of 16.22 μA/mMcm2, low detection limit of 0.001 mM (signal to noise ratio is 3), and a short response time of 3 s. Moreover, the effect of interference materials and the stability of the biosensor were also investigated.
{"title":"A highly performed enzymatic biosensor using distributed electrodes decorated with hydrothermally treated reduced graphene oxide and platinum nanoparticles","authors":"M. F. Hossain, H. Yoon, J. Y. Park","doi":"10.1109/TRANSDUCERS.2015.7181258","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181258","url":null,"abstract":"In this work, hydrothermally reduced graphene oxide (TRGO) was developed with environment friendly reducing agent by optimum time due to exfoliate easily in solution. Two distributed sensing electrodes connected in series are decorated with TRGO added platinum nanoparticles (PtNP) and enzyme composites with nafion, which integrated in a single chip for effectively glucose sensing. The fabricated biosensor exhibited good amperometric response to glucose with a sensitivity of 16.22 μA/mMcm2, low detection limit of 0.001 mM (signal to noise ratio is 3), and a short response time of 3 s. Moreover, the effect of interference materials and the stability of the biosensor were also investigated.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89908955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7180880
J. Naghsh Nilchi, R. Liu, C. Nguyen
A 7th-order capacitive-gap transduced 8-MHz microme-chanical filter has been demonstrated with a channel-selecting bandwidth of 24 kHz (0.3%) and a shape factor of 1.45, which bests the previous mark of 1.86 for similar frequency MEMS-based filters. This shape factor arises from not only the sheer order of the filter, governed by seven coupled clamped-clamped beam resonators, but also from strategic bridging of its non-adjacent 1st, 4th, and 7th resonators to generate loss poles that further steepen the roll-off from passband to stopband. Interestingly, it is the extremely strong electromechanical coupling on the order of keff2~ (Cx/C0) ~17% offered by capacitive-gap transduction at HF that allows the use of so many resonators, thereby enabling this filter. The steepness of this filter's roll-off greatly increases the density of available channels in HF radios for military and Ham applications, as well as future sensor network applications enabled by these results.
{"title":"7th order sharp-roll-off bridged micromechanical filter","authors":"J. Naghsh Nilchi, R. Liu, C. Nguyen","doi":"10.1109/TRANSDUCERS.2015.7180880","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7180880","url":null,"abstract":"A 7th-order capacitive-gap transduced 8-MHz microme-chanical filter has been demonstrated with a channel-selecting bandwidth of 24 kHz (0.3%) and a shape factor of 1.45, which bests the previous mark of 1.86 for similar frequency MEMS-based filters. This shape factor arises from not only the sheer order of the filter, governed by seven coupled clamped-clamped beam resonators, but also from strategic bridging of its non-adjacent 1st, 4th, and 7th resonators to generate loss poles that further steepen the roll-off from passband to stopband. Interestingly, it is the extremely strong electromechanical coupling on the order of keff2~ (Cx/C0) ~17% offered by capacitive-gap transduction at HF that allows the use of so many resonators, thereby enabling this filter. The steepness of this filter's roll-off greatly increases the density of available channels in HF radios for military and Ham applications, as well as future sensor network applications enabled by these results.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83275905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181071
S. Pandey, A. Banerjee, N. Hasan, N. Banerjee, C. Mastrangelo
This paper reports techniques to rapidly heat and cool thermal actuators in microseconds. Rapid temperature changes can lead to high-speed motion and many-fold improvement in load power delivery compared to that achievable with conventional thermal microactuator devices. Rapid heating is achieved by capacitor discharge across the heated element. Rapid cooling is achieved by impacting thin cold plungers that remove heat from hot actuator beams by ultrafast diffusion. We have fabricated and preliminary tested polysilicon thermal actuators based on these principles.
{"title":"Fast pulsed heating and impact cooling of thermal microactuators","authors":"S. Pandey, A. Banerjee, N. Hasan, N. Banerjee, C. Mastrangelo","doi":"10.1109/TRANSDUCERS.2015.7181071","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181071","url":null,"abstract":"This paper reports techniques to rapidly heat and cool thermal actuators in microseconds. Rapid temperature changes can lead to high-speed motion and many-fold improvement in load power delivery compared to that achievable with conventional thermal microactuator devices. Rapid heating is achieved by capacitor discharge across the heated element. Rapid cooling is achieved by impacting thin cold plungers that remove heat from hot actuator beams by ultrafast diffusion. We have fabricated and preliminary tested polysilicon thermal actuators based on these principles.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86488222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-06DOI: 10.1109/TRANSDUCERS.2015.7181341
Cheng Tu, X.L. Guo, J. E. Lee
This paper analyzes higher order out-of-plane vibrations in a piezoelectric Gallium Nitride (GaN) MEMS resonator that utilizes the two-dimensional electron gas (2DEG) as a switchable and embedded electrode. More specifically, we show that the out-of-plane vibration mode that provides the strongest electromechanical resonance (~12MHz) has an associated stress field that allows charges generated from the orthogonal stresses (σx and σy) via the piezoelectric effect to add up constructively. Besides, we show that the 2DEG bottom electrode can be depleted to reduce the resonant peak till it is indistinguishable from the noise floor. The on-off ratio between the resonant peaks at zero gate bias vs. 2DEG depletion is 41dB and resonator has a quality factor of 3,900.
{"title":"Modal analysis of out-of-plane vibrations in switchable piezoelectric Gallium Nitride micromechanical resonators","authors":"Cheng Tu, X.L. Guo, J. E. Lee","doi":"10.1109/TRANSDUCERS.2015.7181341","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181341","url":null,"abstract":"This paper analyzes higher order out-of-plane vibrations in a piezoelectric Gallium Nitride (GaN) MEMS resonator that utilizes the two-dimensional electron gas (2DEG) as a switchable and embedded electrode. More specifically, we show that the out-of-plane vibration mode that provides the strongest electromechanical resonance (~12MHz) has an associated stress field that allows charges generated from the orthogonal stresses (σx and σy) via the piezoelectric effect to add up constructively. Besides, we show that the 2DEG bottom electrode can be depleted to reduce the resonant peak till it is indistinguishable from the noise floor. The on-off ratio between the resonant peaks at zero gate bias vs. 2DEG depletion is 41dB and resonator has a quality factor of 3,900.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86565385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper reports an integrated poly-silicon sub-micron wire biosensor for multiple biomarker detections in clinical samples. It is fabricated by a commercialized 0.35μm CMOS process node. For the first time, an integrated CMOS biosensor chip is experimentally validated in human whole blood and plasma. In this work, a series of anemia/diabetes biomarkers, such as low-density lipoprotein (LDL), hemoglobin (Hb), glycated hemoglobin (HbA1c), and ferritin are examined by the developed CMOS poly-silicon biosensors. The experimental results successfully indicate differences of biomarker concentrations between sick and healthy people. As a consequence, this work demonstrates a potential of CMOS applications in clinical biomarker detections for point-of-care technology.
{"title":"A CMOS-based poly-silicon sub-micron wire biosensor for multiple biomarker detections in clinical samples","authors":"I-Shun Wang, J.-K. Lee, H.-H Lin, Y.-H Sun, G.-Y. Chen, C.-T. Lin","doi":"10.1109/TRANSDUCERS.2015.7181260","DOIUrl":"https://doi.org/10.1109/TRANSDUCERS.2015.7181260","url":null,"abstract":"This paper reports an integrated poly-silicon sub-micron wire biosensor for multiple biomarker detections in clinical samples. It is fabricated by a commercialized 0.35μm CMOS process node. For the first time, an integrated CMOS biosensor chip is experimentally validated in human whole blood and plasma. In this work, a series of anemia/diabetes biomarkers, such as low-density lipoprotein (LDL), hemoglobin (Hb), glycated hemoglobin (HbA1c), and ferritin are examined by the developed CMOS poly-silicon biosensors. The experimental results successfully indicate differences of biomarker concentrations between sick and healthy people. As a consequence, this work demonstrates a potential of CMOS applications in clinical biomarker detections for point-of-care technology.","PeriodicalId":6465,"journal":{"name":"2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2015-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75167525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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