{"title":"Modeling the inversion charge centroid in Tri-Gate MOSFETs including quantum effects","authors":"P. Vimala, N. Balamurugan","doi":"10.1109/ICEVENT.2013.6496577","DOIUrl":null,"url":null,"abstract":"In this paper, inversion charge centroid analytical model for Tri-Gate (TG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To obtain the QM effects of TG MOSFETs, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid.","PeriodicalId":6426,"journal":{"name":"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Emerging Trends in VLSI, Embedded System, Nano Electronics and Telecommunication System (ICEVENT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEVENT.2013.6496577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper, inversion charge centroid analytical model for Tri-Gate (TG) metal-oxide- semiconductor field effect transistors (MOSFETs) considering quantum effects is presented. To obtain the QM effects of TG MOSFETs, the coupled Poisson and Schrodinger equations are solved using variational approach. This model is developed to provide an analytical expression for inversion charge distribution function (ICDF). The obtained ICDF is used to calculate the inversion charge centroid.
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