Uncertainty Quantification of Charge Transfer through a Nanowire Resonant-Tunneling Diode with an ADHIE-FDTD Method

P. Decleer, D. Vande Ginste
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Abstract

The influence of barrier thickness variability on the charge transfer characteristics of an InP/InAs/InP nanowire resonant-tunneling diode is studied. The transmission probability through the diode is calculated by solving the time-dependent effective-mass Schrödinger equation with the Alternating-Direction Hybrid Implicit-Explicit (ADHIE) Finite-Difference Time-Domain (FDTD) method. This recently developed method is tailored towards multiscale problems and thus allows for a much faster evaluation of the transmission probability compared to the commonly used leapfrog FDTD method. Accurate and efficient modeling of small geometric features with the ADHIE-FDTD method now facilitates the development of a robust Monte Carlo method to assess the significant influence of the thickness of the barriers on the transmission probability and the current-voltage characteristic.
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用ADHIE-FDTD方法对纳米线谐振隧道二极管电荷传递的不确定度进行量化
研究了势垒厚度变化对InP/InAs/InP纳米线谐振隧道二极管电荷转移特性的影响。采用交替方向混合隐式-显式(ADHIE)时域有限差分(FDTD)方法求解随时间变化的有效质量Schrödinger方程,计算了通过二极管的传输概率。这种最近开发的方法是针对多尺度问题量身定制的,因此与常用的跨越式时域有限差分方法相比,可以更快地评估传输概率。利用ADHIE-FDTD方法对小几何特征进行精确、高效的建模,有助于开发鲁棒的蒙特卡罗方法来评估垒壁厚度对传输概率和电流-电压特性的重要影响。
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