L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White
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Abstract
A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.
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