Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969044
S. Ippolito, B. Goldberg, M. Unlu
Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.
{"title":"Comparison of numerical aperture increasing lens and standard subsurface microscopy","authors":"S. Ippolito, B. Goldberg, M. Unlu","doi":"10.1109/LEOS.2001.969044","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969044","url":null,"abstract":"Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"52 1","pages":"774-775 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75185816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969108
W. Shin, K. Oh
We report the analysis and measurement on the residual stress in various types of optical fiber preforms to investigate stress variation due to dopant type, their distribution in the cores and post mechanical processes such as preform elongation and over jacketing. To analyze the preform residual stress, an automated residual stress measurement system was also developed based on modified polariscope.
{"title":"Residual stress in silica optical fiber preforms with various core dopants, and post mechanical processes","authors":"W. Shin, K. Oh","doi":"10.1109/LEOS.2001.969108","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969108","url":null,"abstract":"We report the analysis and measurement on the residual stress in various types of optical fiber preforms to investigate stress variation due to dopant type, their distribution in the cores and post mechanical processes such as preform elongation and over jacketing. To analyze the preform residual stress, an automated residual stress measurement system was also developed based on modified polariscope.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"26 1","pages":"901-902 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89257307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.968987
D. J. Shin, H. Ryu, S. Kim, H. Park, Y.H. Lee
Summary form only given. We present novel measurements on the lasing modes in microdisk lasers, which provide comprehensive features on out-coupling of WGMs in far- and near-field regimes. The far-field emission patterns are analyzed in polarization-resolved two-dimensional(2-D) angular distribution measurements in the full half space. The near-field emission patterns are analyzed in spectrally resolved near-field scanning optical microscopy (NSOM). Our microdisk lasers are built on a thin InGaAsP slab waveguide structure high index (n=3.4) with an active layer containing a compressively strained multiple quantum well (QW).
{"title":"Far- and near-field observation of whispering gallery modes in 1.7-2.9 /spl mu/m microdisk lasers","authors":"D. J. Shin, H. Ryu, S. Kim, H. Park, Y.H. Lee","doi":"10.1109/LEOS.2001.968987","DOIUrl":"https://doi.org/10.1109/LEOS.2001.968987","url":null,"abstract":"Summary form only given. We present novel measurements on the lasing modes in microdisk lasers, which provide comprehensive features on out-coupling of WGMs in far- and near-field regimes. The far-field emission patterns are analyzed in polarization-resolved two-dimensional(2-D) angular distribution measurements in the full half space. The near-field emission patterns are analyzed in spectrally resolved near-field scanning optical microscopy (NSOM). Our microdisk lasers are built on a thin InGaAsP slab waveguide structure high index (n=3.4) with an active layer containing a compressively strained multiple quantum well (QW).","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"142 1","pages":"661-662 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85376122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.968852
Lei Xu, B.C. Wang, V. Baby, I. Glesk, P. Prucnal
We compared the performance of the EDFA and the SOA in a wavelength tunable fiber ring structure. Wide tuning ranges of 25 nm and 35 nm are achieved with a fiber ring laser using EDFA and SOA, respectively. The laser using the SOA has a broader wavelength tuning range and a stronger red shift to L-band.
{"title":"Widely tunable fiber ring laser with EDFA/SOA","authors":"Lei Xu, B.C. Wang, V. Baby, I. Glesk, P. Prucnal","doi":"10.1109/LEOS.2001.968852","DOIUrl":"https://doi.org/10.1109/LEOS.2001.968852","url":null,"abstract":"We compared the performance of the EDFA and the SOA in a wavelength tunable fiber ring structure. Wide tuning ranges of 25 nm and 35 nm are achieved with a fiber ring laser using EDFA and SOA, respectively. The laser using the SOA has a broader wavelength tuning range and a stronger red shift to L-band.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"199 1","pages":"421-422 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80076020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969307
M. Hofmann, N. Gerhardt, A. Wagner, W. Stolz, S. Koch, W. Ruhle, J. Hader, J. Moloney, H. Schneider, W. Chow
Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K.
{"title":"Physics of 1.3 /spl mu/m (GaIn)(NAs)/GaAs semiconductor lasers","authors":"M. Hofmann, N. Gerhardt, A. Wagner, W. Stolz, S. Koch, W. Ruhle, J. Hader, J. Moloney, H. Schneider, W. Chow","doi":"10.1109/LEOS.2001.969307","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969307","url":null,"abstract":"Summary form only given. We study experimentally the emission dynamics of an optically pumped MOCVD grown 1.3 /spl mu/m (GaIn)(NAs)/GaAs VCSEL with a particular focus on the temperature dependence of the emission. We use optical excitation with a 100 fs Ti:sapphire laser to measure the emission dynamics of our VCSEL. The dynamics at room temperature are in the picosecond range (peak delay-time of 15.5 ps after excitation and pulse width of 10.5 ps). Moreover, we find laser emission with picosecond dynamics for temperatures between 30 K and 388 K.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"8 1","pages":"326-327 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91244130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969031
B. Wang, Lei Xu, V. Baby, I. Glesk, P. Prucnal
Optical bistability at different wavelengths in a semiconductor fiber ring laser has been demonstrated. Changing the SOA bias current shows two stable optical outputs for any given current within the operating range. The laser can also be switched from one bistable state to another using optical control methods. Different wavelengths are selected by tuning the polarizer or the polarization controller in the laser cavity. These features will make the laser very promising for all-optical wavelength routing networking applications.
{"title":"Wavelength-tunable optical spectral bistability in a ring laser using a semiconductor optical amplifier","authors":"B. Wang, Lei Xu, V. Baby, I. Glesk, P. Prucnal","doi":"10.1109/LEOS.2001.969031","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969031","url":null,"abstract":"Optical bistability at different wavelengths in a semiconductor fiber ring laser has been demonstrated. Changing the SOA bias current shows two stable optical outputs for any given current within the operating range. The laser can also be switched from one bistable state to another using optical control methods. Different wavelengths are selected by tuning the polarizer or the polarization controller in the laser cavity. These features will make the laser very promising for all-optical wavelength routing networking applications.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"10 1","pages":"748-749 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87606964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969281
L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White
A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.
{"title":"Investigation of 2D-lattice distributed reflector lasers","authors":"L. J. Sargent, A. Massara, M. Gioannini, J. Yong, P. Heard, R. Penty, I. White","doi":"10.1109/LEOS.2001.969281","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969281","url":null,"abstract":"A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with K/sub g/ >250cm/sup -1/. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"10 1","pages":"275-276 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72952145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969178
W. Liu, J. Talghader
All-dielectric micromirrors are reported that maintain their shape to within /spl lambda//60 at 633 nm over a range of 30 C, limited by the measurement apparatus. In tandem with the experimental results, thermally invariant coating design is discussed along with thermal expansion results from some common dielectric coating materials.
{"title":"Thermally invariant all-dielectric micromirrors","authors":"W. Liu, J. Talghader","doi":"10.1109/LEOS.2001.969178","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969178","url":null,"abstract":"All-dielectric micromirrors are reported that maintain their shape to within /spl lambda//60 at 633 nm over a range of 30 C, limited by the measurement apparatus. In tandem with the experimental results, thermally invariant coating design is discussed along with thermal expansion results from some common dielectric coating materials.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"43 1","pages":"72-73 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80764003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969180
P. Bhattacharya, W. Zhou, J. Sabarinathan, P. C. Yu
The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.
{"title":"Electrically injected photonic bandgap microcavity light sources","authors":"P. Bhattacharya, W. Zhou, J. Sabarinathan, P. C. Yu","doi":"10.1109/LEOS.2001.969180","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969180","url":null,"abstract":"The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"1 1","pages":"76-77 vol.1"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82952174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-12-01DOI: 10.1109/LEOS.2001.969090
Avinash Karanth Kodi, A. Louri
We have focused on the main scaling issues associated with symmetric multiprocessor architectures. As a solution, we have devised an optical binary tree architecture based on optical time division multiplexing consisting of dual Y-junction splitter/combiner for backplane and on-board interconnections. We have shown the design of 1x8 splitter with loss of 8.325dB for backplane and lx4 splitters with losses of 6.53dB for onboard interconnection. This optical SMP network provides distinct performance and cost advantages over traditional electronic interconnect and even over other optical interconnection networks.
{"title":"Y-junction based addressing in optical symmetric multiprocessor networks","authors":"Avinash Karanth Kodi, A. Louri","doi":"10.1109/LEOS.2001.969090","DOIUrl":"https://doi.org/10.1109/LEOS.2001.969090","url":null,"abstract":"We have focused on the main scaling issues associated with symmetric multiprocessor architectures. As a solution, we have devised an optical binary tree architecture based on optical time division multiplexing consisting of dual Y-junction splitter/combiner for backplane and on-board interconnections. We have shown the design of 1x8 splitter with loss of 8.325dB for backplane and lx4 splitters with losses of 6.53dB for onboard interconnection. This optical SMP network provides distinct performance and cost advantages over traditional electronic interconnect and even over other optical interconnection networks.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"9 1","pages":"865-866 vol.2"},"PeriodicalIF":0.0,"publicationDate":"2001-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84371277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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