Первопринципное исследование электронных, колебательных и упругих свойств кристаллов LiInTe-=SUB=-2-=/SUB=- и LiTlTe-=SUB=-2-=/SUB=-

Ю.М. Басалаев, Е.Б. Дугинова, О Г Басалаева
{"title":"Первопринципное исследование электронных, колебательных и упругих свойств кристаллов LiInTe-=SUB=-2-=/SUB=- и LiTlTe-=SUB=-2-=/SUB=-","authors":"Ю.М. Басалаев, Е.Б. Дугинова, О Г Басалаева","doi":"10.21883/ftp.2023.01.54924.4131","DOIUrl":null,"url":null,"abstract":"Using the sublattice method and density functional theory, the electronic struc-ture of a LiTlTe2 crystal with the chalcopyrite structure was studied for the first time and the equilibrium parameters of the crystal lattice a=6.7526 Å, c=13.3037 Å, u(Te)=0.2423 were calculated. It has been established that the valence bands of the LiTlTe2 crystal and its closest analogue LiInTe2 actually coincide in topol-ogy, and the LiTlTe2 crystal is a direct-gap semiconductor with a band gap of 0.63 eV and a crystal splitting of 0.04 eV. The partial contributions of the densi-ty of states are analyzed and the features of the formation of the valence and conduction bands of LiInTe2 and LiTlTe2 crystals due to the contributions of their sublattices are revealed: the structure of the valence bands of both crystals is completely determined by the interaction in the cationic tetrahedra of InTe4 and TlTe4. The vibrational modes and elastic constants are calculated, confirm-ing the stability and mechanical stability of the LiTlTe2 crystal.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"29 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Физика и техника полупроводников","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.21883/ftp.2023.01.54924.4131","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Using the sublattice method and density functional theory, the electronic struc-ture of a LiTlTe2 crystal with the chalcopyrite structure was studied for the first time and the equilibrium parameters of the crystal lattice a=6.7526 Å, c=13.3037 Å, u(Te)=0.2423 were calculated. It has been established that the valence bands of the LiTlTe2 crystal and its closest analogue LiInTe2 actually coincide in topol-ogy, and the LiTlTe2 crystal is a direct-gap semiconductor with a band gap of 0.63 eV and a crystal splitting of 0.04 eV. The partial contributions of the densi-ty of states are analyzed and the features of the formation of the valence and conduction bands of LiInTe2 and LiTlTe2 crystals due to the contributions of their sublattices are revealed: the structure of the valence bands of both crystals is completely determined by the interaction in the cationic tetrahedra of InTe4 and TlTe4. The vibrational modes and elastic constants are calculated, confirm-ing the stability and mechanical stability of the LiTlTe2 crystal.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用亚晶格法和密度泛函理论,首次研究了具有黄铜矿结构的LiTlTe2晶体的电子结构,计算了其晶格的平衡参数a=6.7526 Å, c=13.3037 Å, u(Te)=0.2423。结果表明,LiTlTe2晶体与LiInTe2晶体的价带在拓扑结构上是一致的,其带隙为0.63 eV,晶体分裂为0.04 eV,是一种直接隙半导体。分析了态密度的部分贡献,揭示了LiInTe2和LiTlTe2晶体由于亚晶格的贡献而形成价带和导带的特征:两种晶体的价带结构完全由InTe4和TlTe4阳离子四面体中的相互作用决定。计算了晶体的振动模态和弹性常数,证实了晶体的稳定性和力学稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Спектроскопия комбинационного рассеяния, инфракрасного поглощения и люминесценции нитрида алюминия, легированного бериллием Первопринципное исследование электронных, колебательных и упругих свойств кристаллов LiInTe-=SUB=-2-=/SUB=- и LiTlTe-=SUB=-2-=/SUB=- Моделирование зонной структуры сверхрешеток на основе "разбавленных" нитридов Молекулярно-лучевая эпитаксия твердого раствора GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=-: феноменологическое описание зависимости x от условий роста на подложке GaAs(001) Широкополосное излучение суперлюминесцентных диодов на основе многослойных структур с квантовыми яма-точками InGaAs/GaAs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1