Pub Date : 2023-06-01DOI: 10.21883/ftp.2021.03.50603.9554
И. Д. Бреев, В.Д. Яковлева, О.С. Кудрявцев, П. Г. Баранов, Евгений Николаевич Мохов, Александр Николаевич Анисимов
The high-temperature (T = 1880◦C) Be-ions diffusion and electron irradiation influence on the AlN monocrystals optical properties were investigated. We demonstrated that Be diffusion into AlN leads to spectral properties change of the Raman scattering and infrared absorption. The analysis of the Raman and infrared absorption spectra of the AlN crystals, containing Be impurity, proves that Be impurity is a getter for intrinsic impurities, which are responsible for AlN crystals yellow color manifestation and spectral lines broadening
{"title":"Спектроскопия комбинационного рассеяния, инфракрасного поглощения и люминесценции нитрида алюминия, легированного бериллием","authors":"И. Д. Бреев, В.Д. Яковлева, О.С. Кудрявцев, П. Г. Баранов, Евгений Николаевич Мохов, Александр Николаевич Анисимов","doi":"10.21883/ftp.2021.03.50603.9554","DOIUrl":"https://doi.org/10.21883/ftp.2021.03.50603.9554","url":null,"abstract":"\u0000 The high-temperature (T = 1880◦C) Be-ions diffusion and electron irradiation influence on the AlN monocrystals optical properties were investigated. We demonstrated that Be diffusion into AlN leads to spectral properties change of the Raman scattering and infrared absorption. The analysis of the Raman\u0000and infrared absorption spectra of the AlN crystals, containing Be impurity, proves that Be impurity is a getter for intrinsic impurities, which are responsible for AlN crystals yellow color manifestation and spectral lines broadening\u0000","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75158305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.02.55326.4225
М. А. Путято, Евгений Александрович Емельянов, М. О. Петрушков, А.В. Васев, Б.Р. Cемягин, В. В. Преображенский
The experimental dependences of the GaPx As1−x solid solution phosphorus proportion on growth conditions by molecular beam epitaxy from As2 and P2 molecules on GaAs(001) substrate were described using the phenomenological model. The model was built on the well-established ideas about the III−V compounds MBE growth. The ratio of the arsenic and phosphorus atoms incorporation coefficients was considered as a function of the substrate temperature and molecular flux densitys. Empirical expressions were found that describe the behavior of the arsenic and phosphorus incorporation coefficients ratio depending on the indicated growth parameters. This makes it possible to estimate the V group molecule flux values to obtain the required x in a GaPx As1−x solid solution at the given substrate temperature and the gallium atoms flow density.
用现象模型描述了As2和P2分子在GaAs(001)衬底上的分子束外延生长条件对GaPx As1−x固溶体磷比例的影响。该模型建立在关于iii−V化合物MBE生长的成熟思想的基础上。砷和磷原子掺入系数的比值是底物温度和分子通量密度的函数。经验表达式描述了砷磷掺入系数比随指示生长参数的变化规律。这使得在给定的衬底温度和镓原子流动密度下，可以估计V族分子通量值，以获得所需的xin a GaPx As1 - x固溶体。
{"title":"Молекулярно-лучевая эпитаксия твердого раствора GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=-: феноменологическое описание зависимости x от условий роста на подложке GaAs(001)","authors":"М. А. Путято, Евгений Александрович Емельянов, М. О. Петрушков, А.В. Васев, Б.Р. Cемягин, В. В. Преображенский","doi":"10.21883/ftp.2023.02.55326.4225","DOIUrl":"https://doi.org/10.21883/ftp.2023.02.55326.4225","url":null,"abstract":"The experimental dependences of the GaPx As1−x solid solution phosphorus proportion on growth conditions by molecular beam epitaxy from As2 and P2 molecules on GaAs(001) substrate were described using the phenomenological model. The model was built on the well-established ideas about the III−V compounds MBE growth. The ratio of the arsenic and phosphorus atoms incorporation coefficients was considered as a function of the substrate temperature and molecular flux densitys. Empirical expressions were found that describe the behavior of the arsenic and phosphorus incorporation coefficients ratio depending on the indicated growth parameters. This makes it possible to estimate the V group molecule flux values to obtain the required x in a GaPx As1−x solid solution at the given substrate temperature and the gallium atoms flow density.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73238895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55890.01k
Т. С. Шамирзаев
The vacancy formation dynamics in doped semicon- ductor heterostructures with quantum dots (QDs) formed in the AlAs anionic sublattice has been studied. A theoretical model that describes the effect of doping on the vacancy generation dynamics is constructed. It is shown that the generation of positively charged arsenic vacancies is more probable than the generation of neutral ones at high hole concentrations. On the other hand, at high electron concentrations, the formation of neutral arsenic vacancies is more efficient than that positively charged ones. It has been experimentally revealed that the vacancy-stimulated high- temperature diffusion of antimony is enhanced (suppressed) in p-(n-)-doped heterostructures with Al(Sb,As)/AlAs QDs.
{"title":"XXVII Международный симпозиум Нанофизика и наноэлектроника\", Нижний Новгород, 13-16 марта 2023 г. Формирование заряженных вакансий в анионной подрешетке AlAs","authors":"Т. С. Шамирзаев","doi":"10.21883/ftp.2023.04.55890.01k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55890.01k","url":null,"abstract":"The vacancy formation dynamics in doped semicon- ductor heterostructures with quantum dots (QDs) formed in the AlAs anionic sublattice has been studied. A theoretical model that describes the effect of doping on the vacancy generation dynamics is constructed. It is shown that the generation of positively charged arsenic vacancies is more probable than the generation of neutral ones at high hole concentrations. On the other hand, at high electron concentrations, the formation of neutral arsenic vacancies is more efficient than that positively charged ones. It has been experimentally revealed that the vacancy-stimulated high- temperature diffusion of antimony is enhanced (suppressed) in p-(n-)-doped heterostructures with Al(Sb,As)/AlAs QDs.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76710212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56202.29k
Е.Р. Кочаровская, Владимир Владиленович Кочаровский
The dependence of the structure and stability of strongly asymmetric stationary states of a superradiant laser with a slightly asymmetric low-Q Fabry-Perot cavity on its length, reflection factors of mirrors, and pumping level is studied. The states are related to a self-consistent inhomogeneous half-wavelength population inversion grating. The possibility of the existence of two dynamic phase transitions from a stationary (monochromatic) state of this type to a nonstationary one is established: 1) a dissipative superradiant transition to a regime with a quasi-continuous lasing spectrum (in a weakly asymmetric cavity) and 2) a self-modulation transition to a regime with a discrete lasing spectrum. It is shown that the latter can be caused by excitation of both polariton and electromagnetic laser modes due to resonant Rabi oscillations of active centers with a sufficiently long phase relaxation time.
{"title":"Структура и особенности автомодуляции сверхизлучательных состояний в асимметричном резонаторе Фабри-Перо","authors":"Е.Р. Кочаровская, Владимир Владиленович Кочаровский","doi":"10.21883/ftp.2023.05.56202.29k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56202.29k","url":null,"abstract":"The dependence of the structure and stability of strongly asymmetric stationary states of a superradiant laser with a slightly asymmetric low-Q Fabry-Perot cavity on its length, reflection factors of mirrors, and pumping level is studied. The states are related to a self-consistent inhomogeneous half-wavelength population inversion grating. The possibility of the existence of two dynamic phase transitions from a stationary (monochromatic) state of this type to a nonstationary one is established: 1) a dissipative superradiant transition to a regime with a quasi-continuous lasing spectrum (in a weakly asymmetric cavity) and 2) a self-modulation transition to a regime with a discrete lasing spectrum. It is shown that the latter can be caused by excitation of both polariton and electromagnetic laser modes due to resonant Rabi oscillations of active centers with a sufficiently long phase relaxation time.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"28 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82387744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55898.13k
С.В. Балакирев, Д.В. Кириченко, С.Д. Комаров, А.С. Драгунова, Н.Е. Черненко, Н.А. Шандыба, Н.В. Крыжановская, А. Е. Жуков, Максим Сергеевич Солодовник
This paper presents the results of the experimental studies of InAs quantum dot overgrowth by a low-temperature GaAs layer at different arsenic vapor pressures. It is revealed that a threefold decrease in the arsenic pressure at a fixed deposition rate of the capping layer leads to a change in the shape of the photoluminescence spectrum of quantum dots with one maximum at the level of 1.19 eV to the shape of the spectrum with two low-energy contributions at the levels of 1.08 and 1.15 eV. Based on the analysis of the power dependences of the photoluminescence spectra, it is found that the low-energy contributions of the photoluminescence of quantum dots overgrown at a low arsenic pressure correspond to the ground-state emission two groups of quantum dots with different average sizes formed during mass transfer in the “quantum dot – wetting layer – matrix” system.
{"title":"Влияние давления мышьяка при заращивании квантовых точек InAs тонким низкотемпературным слоем GaAs на их оптические свойства","authors":"С.В. Балакирев, Д.В. Кириченко, С.Д. Комаров, А.С. Драгунова, Н.Е. Черненко, Н.А. Шандыба, Н.В. Крыжановская, А. Е. Жуков, Максим Сергеевич Солодовник","doi":"10.21883/ftp.2023.04.55898.13k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55898.13k","url":null,"abstract":"This paper presents the results of the experimental studies of InAs quantum dot overgrowth by a low-temperature GaAs layer at different arsenic vapor pressures. It is revealed that a threefold decrease in the arsenic pressure at a fixed deposition rate of the capping layer leads to a change in the shape of the photoluminescence spectrum of quantum dots with one maximum at the level of 1.19 eV to the shape of the spectrum with two low-energy contributions at the levels of 1.08 and 1.15 eV. Based on the analysis of the power dependences of the photoluminescence spectra, it is found that the low-energy contributions of the photoluminescence of quantum dots overgrown at a low arsenic pressure correspond to the ground-state emission two groups of quantum dots with different average sizes formed during mass transfer in the “quantum dot – wetting layer – matrix” system.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82621557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55895.10k
В.А. Кукушкин, М.А. Лобаев, А.Л. Вихарев, А М Горбачев, Д.Б. Радищев, Е. А. Архипова, М. Н. Дроздов, Ю.В. Кукушкин, Владимир Александрович Исаев, Сергей Александрович Богданов
Экспериментальные температурные зависимости сопротивлений, близких к порогу фазового перехода в состояние с металлической проводимостью тонких (1-3 нм) сильно легированных бором delta-слоев в химически осажденном из газовой фазы алмазе в широком диапазоне температур от ~100 до ~500 K, можно описать двумерным законом Мотта ("перескоки" дырок между локализованными состояниями с зависящей от температуры средней длиной "прыжка") в области низких температур и законом Аррениуса ("перескоки" дырок между ближайшими локализованными состояниями) в области высоких температур. Переход между ними происходит при 230-300 K. Потенциалы локализованных состояний дырок --- дальнодействующие, например кулоновские, а статические диэлектрические проницаемости delta-слоев в несколько раз больше, чем у нелегированного химически осажденного из газовой фазы алмаза. Ключевые слова: CVD-алмаз, закон Аррениуса, закон Мотта, легированные delta-слои, "прыжковая" проводимость, фазовый переход изолятор-металл.
{"title":"Переход между законами Мотта и Аррениуса в температурных зависимостях сопротивлений сильно легированных бором дельта-слоев в искусственном алмазе","authors":"В.А. Кукушкин, М.А. Лобаев, А.Л. Вихарев, А М Горбачев, Д.Б. Радищев, Е. А. Архипова, М. Н. Дроздов, Ю.В. Кукушкин, Владимир Александрович Исаев, Сергей Александрович Богданов","doi":"10.21883/ftp.2023.04.55895.10k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55895.10k","url":null,"abstract":"Экспериментальные температурные зависимости сопротивлений, близких к порогу фазового перехода в состояние с металлической проводимостью тонких (1-3 нм) сильно легированных бором delta-слоев в химически осажденном из газовой фазы алмазе в широком диапазоне температур от ~100 до ~500 K, можно описать двумерным законом Мотта (\"перескоки\" дырок между локализованными состояниями с зависящей от температуры средней длиной \"прыжка\") в области низких температур и законом Аррениуса (\"перескоки\" дырок между ближайшими локализованными состояниями) в области высоких температур. Переход между ними происходит при 230-300 K. Потенциалы локализованных состояний дырок --- дальнодействующие, например кулоновские, а статические диэлектрические проницаемости delta-слоев в несколько раз больше, чем у нелегированного химически осажденного из газовой фазы алмаза. Ключевые слова: CVD-алмаз, закон Аррениуса, закон Мотта, легированные delta-слои, \"прыжковая\" проводимость, фазовый переход изолятор-металл.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86612065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55891.03k
Р.Р. Резник, В.О. Гридчин, К.П. Котляр, А. И. Хребтов, Е.В. Убыйвовк, А.С. Драгунова, Н.В. Крыжановская, Г. Э. Цырлин
We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.
{"title":"Синтез методом молекулярно-пучковой эпитаксии и свойства InAs-квантовых точек в теле AlGaAs нитевидных нанокристаллов","authors":"Р.Р. Резник, В.О. Гридчин, К.П. Котляр, А. И. Хребтов, Е.В. Убыйвовк, А.С. Драгунова, Н.В. Крыжановская, Г. Э. Цырлин","doi":"10.21883/ftp.2023.04.55891.03k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55891.03k","url":null,"abstract":"We present the results of experimental studies on the synthesis by molecular-beam epitaxy of AlGaAs nanowires with InAs quantum dots. The morphological, structural, and optical properties of the grown nanostructures have been studied. It is important to note that the emission from quantum dots is observed in the wavelength range from 750 to 970 nm. Assumptions about the nature of short-wavelength emission from quantum dots are formulated. In particular, one of the reasons may be a significant desorption of indium atoms and the presence of gallium atoms in catalyst drops during the growth at a substrate temperature of 510◦C. The proposed technology opens up new possibilities for integration direct-gap III−V materials with a silicon platform for various applications in photonics and quantum communications.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84641153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.04.55896.11k
В. М. Литвяк, Р. В. Чербунин, Ф.Ю. Солдатенков, В.К. Калевич, К. В. Кавокин
In this work, we measured the correlator spectrum of optically cooled nuclear spin system of a bulk n-GaAs crystal in a zero magnetic field. The resulting spectrum is described by two contours, which can be interpreted as the participation of nuclear spins in two types of interactions. We analyzed the measured spectrum in the model for classical magnetic moments in the GaAs lattice. The analysis showed that the main contribution to the high-frequency part of the spectrum is due to the dipole-dipole interaction, and that to the low-frequency part is due to the quadrupole interaction.
{"title":"Проявление диполь-дипольного и квадрупольного взаимодействий в спектре коррелятора оптически охлажденных ядерных спинов объемного кристалла n-GaAs","authors":"В. М. Литвяк, Р. В. Чербунин, Ф.Ю. Солдатенков, В.К. Калевич, К. В. Кавокин","doi":"10.21883/ftp.2023.04.55896.11k","DOIUrl":"https://doi.org/10.21883/ftp.2023.04.55896.11k","url":null,"abstract":"In this work, we measured the correlator spectrum of optically cooled nuclear spin system of a bulk n-GaAs crystal in a zero magnetic field. The resulting spectrum is described by two contours, which can be interpreted as the participation of nuclear spins in two types of interactions. We analyzed the measured spectrum in the model for classical magnetic moments in the GaAs lattice. The analysis showed that the main contribution to the high-frequency part of the spectrum is due to the dipole-dipole interaction, and that to the low-frequency part is due to the quadrupole interaction.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75276220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.05.56200.27k
М.В. Гавриков, Е. Г. Глуховской, Н Д Жуков
An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantum-sized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir-Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission-injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the I–V characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.
{"title":"Квантовая проводимость в одиночных и связанных квантово-размерных частицах узкозонных полупроводников","authors":"М.В. Гавриков, Е. Г. Глуховской, Н Д Жуков","doi":"10.21883/ftp.2023.05.56200.27k","DOIUrl":"https://doi.org/10.21883/ftp.2023.05.56200.27k","url":null,"abstract":"An organo-modified ordered layered structure with three-dimensional close packing based on colloidal quantum-sized particles (QP) of InSb, PbS, CdSe semiconductors and Langmuir-Blodgett films has been fabricated and studied. According to the current-voltage characteristics (CVC) of single-electron transport in the model of a nanocell with a linear chain QP across the layers, the processes limiting conductivity were established: emission-injection tunneling from a probe into a nanoparticle, motion in a nanoparticle determined by the establishment of an electronic wave process in it, and tunneling through a nanogap between nanoparticles. Quasi-periodic oscillations of the current and resonant peaks of quantum conductivity are observed on the I–V characteristics, which were estimated in the quantum wire model. For an even number of layers (QP, 2, or 4), the I–V characteristics were used to determine the attenuation of size quantization and the decrease in current due to the weak interaction of nanoparticles. With an odd number (3 or 5), the nanochain acts as a single quantum thread with manifestations on the CVC similar to the cases of one QP. In this case, the motion of an electron can be considered as a one-electron charge wave.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84617229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.21883/ftp.2023.01.54927.3548
Александр Александрович Андронов, В. И. Позднякова
In framework of classical consideration of electron trajectories in crossed E, H fields and con-ductivity of electron system on cyclotron resonance in single layer graphene possibility to achieve THz cyclotron lasing in hexagonal boron nitride–single layer graphene sandwiches is discussed. By simplified consideration with known data on scattering rate in the sandwiches it is demonstrated that the CW laser action can be achieved in high quality sandwiches at room temperature at frequencies above about 0.5–1 THz in magnetic field above 5000–10000 Gauss. Short discussions of Landau level quantization in crossed fields, amplification on cy-clotron harmonics and cyclotron amplification at low temperatures are given.
{"title":"О ТГц лазерах на циклотронном резонансе в графене в скрещенных E,H полях при T=300 K и в непрерывном режиме","authors":"Александр Александрович Андронов, В. И. Позднякова","doi":"10.21883/ftp.2023.01.54927.3548","DOIUrl":"https://doi.org/10.21883/ftp.2023.01.54927.3548","url":null,"abstract":"In framework of classical consideration of electron trajectories in crossed E, H fields and con-ductivity of electron system on cyclotron resonance in single layer graphene possibility to achieve THz cyclotron lasing in hexagonal boron nitride–single layer graphene sandwiches is discussed. By simplified consideration with known data on scattering rate in the sandwiches it is demonstrated that the CW laser action can be achieved in high quality sandwiches at room temperature at frequencies above about 0.5–1 THz in magnetic field above 5000–10000 Gauss. Short discussions of Landau level quantization in crossed fields, amplification on cy-clotron harmonics and cyclotron amplification at low temperatures are given.","PeriodicalId":24054,"journal":{"name":"Физика и техника полупроводников","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82213472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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