CMOS VCO design optimization using reliable 3D electromagnetic inductor models

Abstract

Lack of reliable inductor models at high frequencies in SiGe makes the design of certain microwave circuits a tiresome task. This paper presents the design process of a fully integrated 11.6 GHz BiCMOS VCO with a good compromise between phase noise, power consumption and area. Inductors are essential components in the VCO design and therefore must be carefully modeled. We propose the use of a three dimensional electromagnetic field simulator to characterize the silicon integrated planar inductor within the VCO. Simulation and measurement results demonstrate how the use of an accurate inductor model can significantly reduce the designing steps leading to a first time working silicon.