{"title":"Gadolinium scandate by high pressure sputtering as a high-k dielectric","authors":"P. C. Feijoo, M. Pampillón, E. Andrés","doi":"10.1109/CDE.2013.6481331","DOIUrl":null,"url":null,"abstract":"We demonstrate the viability of gadolinium scandate (Gd<sub>2-x</sub>Sc<sub>x</sub>O<sub>3</sub>) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd<sub>2-x</sub>Sc<sub>x</sub>O<sub>3</sub>/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScO<sub>x</sub> and GdO<sub>x</sub> in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"49 1","pages":"17-20"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We demonstrate the viability of gadolinium scandate (Gd2-xScxO3) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd2-xScxO3/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScOx and GdOx in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.
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