{"title":"EFFECT OF ELECTRONIC IRRADIATION IN THE PRODUCTION OF NbSe2 NANOTUBES","authors":"D. Galván, Jun-Ho Kim, M. Maple, E. Adem","doi":"10.1081/FST-100102969","DOIUrl":null,"url":null,"abstract":"In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiating NbSe2 with high doses of electron irradiation. The apparatus used for the irradiation was a 2 MeV Van de Graaff accelerator at the following conditions: voltage 1.3 MeV, current 5 μA, dose rate 25 kGy/min, and total dosage 1000 kGy. These conditions were maintained fixed while irradiation dosage was changed between 100, 250 and 500 Mrad. We observed enormous and very well defined nanotubes with a length of several nm and width of a few nm, which are hollow and capped at one end. As the level of irradiation is increased to 500 Mrad, onion-like structures were observed.","PeriodicalId":12470,"journal":{"name":"Fullerene Science and Technology","volume":"66 1","pages":"225 - 232"},"PeriodicalIF":0.0000,"publicationDate":"2001-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fullerene Science and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1081/FST-100102969","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
In this work, we report the production of NbSe2 (niobium diselenide) nanotubes formed by irradiating NbSe2 with high doses of electron irradiation. The apparatus used for the irradiation was a 2 MeV Van de Graaff accelerator at the following conditions: voltage 1.3 MeV, current 5 μA, dose rate 25 kGy/min, and total dosage 1000 kGy. These conditions were maintained fixed while irradiation dosage was changed between 100, 250 and 500 Mrad. We observed enormous and very well defined nanotubes with a length of several nm and width of a few nm, which are hollow and capped at one end. As the level of irradiation is increased to 500 Mrad, onion-like structures were observed.
在这项工作中,我们报道了用高剂量的电子辐照NbSe2形成的NbSe2(二硒化铌)纳米管的生产。辐照装置为2 MeV Van de Graaff加速器,辐照条件为:电压1.3 MeV,电流5 μA,剂量率25 kGy/min,总剂量1000 kGy。当辐照剂量在100、250和500毫微克之间变化时,这些条件保持不变。我们观察到长几纳米,宽几纳米的巨大且非常清晰的纳米管,它们是中空的,一端有盖子。当辐照量增加到500mrad时,观察到洋葱状结构。