Si Implantation in GaN at Elevated Temperatures

Abstract

Activation annealing of implantation doping of GaN has been restricted by the phenomenon of GaN decomposition at high temperatures. Purpose of high temperature annealing is to recover the lattice damage caused by implantation and to activate the implanted atoms to substitute the lattice atoms. Since elevating the substrate temperature during implantation has been proved to be effective to reduce the lattice damage and help to enhance the activation efficiency in other semiconductor materials, in this work such a method was applied to Si implantation in GaN. The samples were implanted at different temperatures from room temperature to 500°C with a dose of 2×1015cm−2 and subsequently annealed at 1200°C for 5 min. Both structural and electrical characterizations were performed before and after annealing to investigate the effect of implantation temperature on Si implantation in GaN.