Xuejie Wang, Dan Yang, Yongqing Huang, Huayun Zhi, Kai Liu, X. Duan, X. Ren
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Abstract
An InP-InGaAs-NiO p-i-n photodiode achieving p-side full coverage electrode and top illumination by using NiO films is proposed. This structure increases DC saturation current by about 27mA than conventional structure and has better bandwidth.
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