Silicon carbide coated MEMS strain sensor for harsh environment applications

R. Azevedo, Jingchun Zhang, D.G. Jones, D. R. Myers, A. Jog, B. Jamshidi, M. Wijesundara, R. Maboudian, A. Pisano
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引用次数: 34

Abstract

We present poly-SiC coating and subsequent operation of a Si-based double-ended tuning fork (DETF) resonant strain sensor fabricated in the Bosch commercial foundry process. The coating is applied post release and, hence, has minimal impact on the front end of the microfabrication process. The deposition thickness of nanometer-thin SiC coating was optimized to provide enhanced corrosion resistance to silicon MEMS without compromising the electrical and mechanical performance of the original device. The coated DETF achieves a strain resolution of 0.2 mue in a 10 Hz to 20 kHz bandwidth, which is comparable to the uncoated device. The coated DETF is locally heated with an IR lamp and is shown to operate up to 190 degC in air with a temperature sensitivity of -7.6 Hz/degC. The devices are also dipped in KOH at 80 degC for 5 minutes without etching the structures, confirming the poly-SiC coating provides a sufficient chemical barrier to the underlying silicon. The results demonstrate that SiC-coated poly-Si devices are an effective bridge between poly-Si and full poly-SiC films for applications requiring a high level of corrosion resistance and moderate operating temperatures (up to 200 degC) without compromising the performance characteristics of the original poly-Si device.
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用于恶劣环境应用的碳化硅涂层MEMS应变传感器
我们介绍了在博世商业铸造工艺中制造的硅基双端音叉(DETF)谐振应变传感器的聚sic涂层和后续操作。涂层在释放后应用,因此对微加工过程的前端影响最小。优化了纳米薄SiC涂层的沉积厚度,在不影响原始器件电气和机械性能的情况下,增强了硅MEMS的耐腐蚀性。涂层DETF在10 Hz至20 kHz带宽内实现0.2 μ m的应变分辨率,与未涂层器件相当。涂覆的DETF用红外线灯局部加热,显示在空气中高达190摄氏度的温度下工作,温度灵敏度为-7.6 Hz/摄氏度。这些器件还在80℃的KOH中浸泡了5分钟,没有蚀刻结构,证实了聚sic涂层为底层的硅提供了足够的化学屏障。结果表明,sic涂层的多晶硅器件是多晶硅和全多晶硅薄膜之间的有效桥梁,适用于需要高水平耐腐蚀性和中等工作温度(高达200摄氏度)的应用,而不会影响原始多晶硅器件的性能特征。
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