{"title":"On the mechanism of dielectric breakdown of ceramic for HV capacitors","authors":"Wan Rongen, Chen Shoutian","doi":"10.1109/ICPADM.1991.172257","DOIUrl":null,"url":null,"abstract":"Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.<<ETX>>","PeriodicalId":6450,"journal":{"name":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","volume":"95 1","pages":"1061-1063 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1991-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICPADM.1991.172257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Dielectric breakdown tests were performed on specimens prepared from BaTiO/sub 3/ material with additives (less than 10%) mainly of MgTiO/sub 3/, CaZrO/sub 3/, Bi/sub 2/O/sub 3/, and SnO/sub 2/. The dielectric constant of the specimen is about 6500 and the Curie point temperature is about 20 degrees C. The mechanism of dielectric breakdown is mainly thermal breakdown at T>T/sub c/, because breakdown stresses decrease with temperature. Breakdown occurs in the grain boundary layer at T>T/sub c/. It does not arise from thermal mechanisms or electrical mechanisms and relative to mechanical properties of low temperature and additives of specimens.<>
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