化学气相沉积法制备Zn 2 GeO 4 纳米线及其发光性质的研究

周政, 李金华, 方芳, 楚学影, 方铉, 魏志鹏, 王晓华
{"title":"化学气相沉积法制备Zn 2 GeO 4 纳米线及其发光性质的研究","authors":"周政, 李金华, 方芳, 楚学影, 方铉, 魏志鹏, 王晓华","doi":"10.3788/CO.20140702.0281","DOIUrl":null,"url":null,"abstract":"Ternary Zn2GeO4nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm × 1 cm silicon wafer sputtered by metal Au catalyst.Zn2GeO4structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8∶ 1wt% as the X-ray diffraction(XRD) shown.The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 μm.The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm,respectively.Finally,the growth mechanism of the Zn2GeO4nanowires was analyzed.","PeriodicalId":10133,"journal":{"name":"Chinese Journal of Optics and Applied Optics","volume":"19 1","pages":"281-286"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Optics and Applied Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3788/CO.20140702.0281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Ternary Zn2GeO4nanowires were prepared by VLS law and the Chemical Vapor Deposition(CVD) method on 1 cm × 1 cm silicon wafer sputtered by metal Au catalyst.Zn2GeO4structure was obtained under the condition that the mass ratio of zinc source and germanium source was 8∶ 1wt% as the X-ray diffraction(XRD) shown.The Scanning Electron Microscopy(SEM) result showed that the diameter of the nanowires was 100 nm and the length was approximately 10-11 μm.The photoluminescence(PL) spectra showed two emission peaks at 432 nm and 480 nm,respectively.Finally,the growth mechanism of the Zn2GeO4nanowires was analyzed.
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化学气相沉积法制备Zn 2 GeO 4 纳米线及其发光性质的研究
采用VLS法和化学气相沉积法(CVD)在金属Au催化剂溅射的1 cm × 1 cm硅片上制备了三元zn2geo4纳米线。x射线衍射(XRD)表明,在锌源和锗源质量比为8∶1wt%的条件下,得到了zn2geo4的结构。扫描电镜(SEM)结果表明,纳米线的直径为100 nm,长度约为10 ~ 11 μm。光致发光(PL)光谱分别在432 nm和480 nm处出现两个发射峰。最后,分析了zn2geo4纳米线的生长机理。
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