H.H. Kim, K. Sohn, L. Casas, R. Pfeffer, R. Lareau
{"title":"Paraelectric properties of PLT(28) reactively sputtered by multi-element metal target","authors":"H.H. Kim, K. Sohn, L. Casas, R. Pfeffer, R. Lareau","doi":"10.1109/ISAF.1994.522405","DOIUrl":null,"url":null,"abstract":"Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature ranges of 450-750/spl deg/C. Metal(Pt)-PLT-metal(Pt) (MDM) configuration as a planar capacitor of ULSI DRAM application is fabricated on Pt/Ti/SiO/sub 2//Si multi-layer substrate. The best results of dielectric constant and dissipation factor, using the paraelectric PLT thin film of 200 nm thick, were 1216 and 0.018, respectively. The highest charge storage density was 12.5 /spl mu/C/cm/sup 2/ and the lowest leakage current density was 0.1 /spl mu/A/cm/sup 2/.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"472-475"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1994.522405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature ranges of 450-750/spl deg/C. Metal(Pt)-PLT-metal(Pt) (MDM) configuration as a planar capacitor of ULSI DRAM application is fabricated on Pt/Ti/SiO/sub 2//Si multi-layer substrate. The best results of dielectric constant and dissipation factor, using the paraelectric PLT thin film of 200 nm thick, were 1216 and 0.018, respectively. The highest charge storage density was 12.5 /spl mu/C/cm/sup 2/ and the lowest leakage current density was 0.1 /spl mu/A/cm/sup 2/.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
