Pub Date : 2006-07-01DOI: 10.1109/ISAF.2006.4387886
H. Kakemoto, Jianyong Li, T. Harigai, S. Nam, S. Wada, T. Tsurumi
The dielectric measurement for microscopic area of multi-layer ceramics capacitor was carried out by microwave microscope using non-contact microwave probe. The phase of incidence microwave for sample was fixed to pi/2 in order to realize accurate measurement of sample. The spatial resolution for dielectric measurement was increased based on Kirchhoff's diffraction theory with decreasing coaxial cable and probe diameter. From reflection intensity mapping, the dielectric permittivity distribution in microscopic area at GHz order was measured for cross section of multi-layer ceramics capacitor at room temperature. The spatial resolution was experimentally estimated to be about 10 mum from mapping of cross section view of dielectric and inner electrode layers in multi layer ceramics capacitor.
{"title":"Spatial Resolution and Measurement Accuracy of Dielectric Microscope Using Non-contact State Microwave Probe","authors":"H. Kakemoto, Jianyong Li, T. Harigai, S. Nam, S. Wada, T. Tsurumi","doi":"10.1109/ISAF.2006.4387886","DOIUrl":"https://doi.org/10.1109/ISAF.2006.4387886","url":null,"abstract":"The dielectric measurement for microscopic area of multi-layer ceramics capacitor was carried out by microwave microscope using non-contact microwave probe. The phase of incidence microwave for sample was fixed to pi/2 in order to realize accurate measurement of sample. The spatial resolution for dielectric measurement was increased based on Kirchhoff's diffraction theory with decreasing coaxial cable and probe diameter. From reflection intensity mapping, the dielectric permittivity distribution in microscopic area at GHz order was measured for cross section of multi-layer ceramics capacitor at room temperature. The spatial resolution was experimentally estimated to be about 10 mum from mapping of cross section view of dielectric and inner electrode layers in multi layer ceramics capacitor.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"810 ","pages":"281-282"},"PeriodicalIF":0.0,"publicationDate":"2006-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91512731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-09-01DOI: 10.1109/ISAF.1994.522372
A. Becker, M. Stein, B. Jungnickel
PVDF is a semicrystalline polymer with very interesting ferroelectric, pyroelectric and piezoelectric properties. It is the aim of the present paper to prove the importance of the amorphous phase for the strength of the respective activity coefficients. To this end, the structure and the dynamics of this particular phase is varied by blending with PMMA and by suitable annealing. It will be shown that the electric efficiency is governed to a large extent by the type, the number, the mobility, and the properties of trapping sites of injected charges which migrate through, and reside in, the amorphous phase.
{"title":"Dependence on supermolecular structure and on charge injection conditions of ferroelectric switching of PVDF and its blends with PMMA","authors":"A. Becker, M. Stein, B. Jungnickel","doi":"10.1109/ISAF.1994.522372","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522372","url":null,"abstract":"PVDF is a semicrystalline polymer with very interesting ferroelectric, pyroelectric and piezoelectric properties. It is the aim of the present paper to prove the importance of the amorphous phase for the strength of the respective activity coefficients. To this end, the structure and the dynamics of this particular phase is varied by blending with PMMA and by suitable annealing. It will be shown that the electric efficiency is governed to a large extent by the type, the number, the mobility, and the properties of trapping sites of injected charges which migrate through, and reside in, the amorphous phase.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"49 1","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"1995-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79055668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522459
J. Yarrison-Rice, E. Sharp, G. Wood, G. Salamo, R.J. Anderson, R. Klanck, R. Neurgaonkar
We present experimental results showing an improvement in the spatial resolution of phase conjugate images obtained from mutually pumped phase conjugators. Resolutions of >100 lines/mm are presented and we demonstrate that this resolution can be achieved while performing image processing tasks such as the addition and subtraction of complex spatial distributions. These results represent greater than an order of magnitude improvement over previously reported resolutions obtained in photorefractive mutually pumped phase conjugators and approach the theoretical limit imposed by the grating spacing and crosstalk.
{"title":"Mutually pumped phase conjugation with spatial resolution","authors":"J. Yarrison-Rice, E. Sharp, G. Wood, G. Salamo, R.J. Anderson, R. Klanck, R. Neurgaonkar","doi":"10.1109/ISAF.1994.522459","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522459","url":null,"abstract":"We present experimental results showing an improvement in the spatial resolution of phase conjugate images obtained from mutually pumped phase conjugators. Resolutions of >100 lines/mm are presented and we demonstrate that this resolution can be achieved while performing image processing tasks such as the addition and subtraction of complex spatial distributions. These results represent greater than an order of magnitude improvement over previously reported resolutions obtained in photorefractive mutually pumped phase conjugators and approach the theoretical limit imposed by the grating spacing and crosstalk.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"44 1","pages":"681-682"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73902121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522502
V. E. Khutorsky, Sidney B. Lang
TGS-gelatin films have been grown by evaporation of water from a gelatin gel containing a solution of TGS. When this material absorbs water from the atmosphere, it forms a ferroelectric TGS subsystem and a nonferroelectric but highly polarizable dipole subsystem of water absorbed in the intermolecular spaces of gelatin molecules. Moist films have pyroelectric coefficients about four times higher than dried ones. The dielectric properties also change showing the major role played by the orientational polarizability of the water molecules.
{"title":"Pyroelectric and dielectric properties of dry and moist TGS-gelatin films","authors":"V. E. Khutorsky, Sidney B. Lang","doi":"10.1109/ISAF.1994.522502","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522502","url":null,"abstract":"TGS-gelatin films have been grown by evaporation of water from a gelatin gel containing a solution of TGS. When this material absorbs water from the atmosphere, it forms a ferroelectric TGS subsystem and a nonferroelectric but highly polarizable dipole subsystem of water absorbed in the intermolecular spaces of gelatin molecules. Moist films have pyroelectric coefficients about four times higher than dried ones. The dielectric properties also change showing the major role played by the orientational polarizability of the water molecules.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"7 1","pages":"817-820"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85686994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522499
J. Jung, Y. Park, S. Choi
Dielectric, piezoelectric and pyroelectric properties of 0.65(Pb/sub 1-x/Sr/sub x/)(Mg/sub 1/3/Ta/sub 2/3/)O/sub 3/-0.35PbTiO/sub 3/ (0/spl les/x/spl les/0.12) solid solution near the morphotropic phase boundary (PMT-PT) have been investigated. Dielectric constant and loss of poled ceramic samples were determined. The electromechanical coupling factor and piezoelectric d/sub 33/ constant were measured for various compositions in the ceramics. The pyroelectric coefficient and spontaneous polarization were measured by the static Byer-Roundy method as a function of temperature. The values of dielectric constant, piezoelectric d/sub 33/ constant and pyroelectric coefficient for Sr-doped PMT-PT are larger compared to the values observed for undoped PMT-PT ceramics. Transition temperature is continuously shifted to lower temperature with increase of a small amount of SrCO/sub 3/.
{"title":"Dielectric, piezoelectric, and pyroelectric properties of Sr-doped PMT-PT solid solution ceramics","authors":"J. Jung, Y. Park, S. Choi","doi":"10.1109/ISAF.1994.522499","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522499","url":null,"abstract":"Dielectric, piezoelectric and pyroelectric properties of 0.65(Pb/sub 1-x/Sr/sub x/)(Mg/sub 1/3/Ta/sub 2/3/)O/sub 3/-0.35PbTiO/sub 3/ (0/spl les/x/spl les/0.12) solid solution near the morphotropic phase boundary (PMT-PT) have been investigated. Dielectric constant and loss of poled ceramic samples were determined. The electromechanical coupling factor and piezoelectric d/sub 33/ constant were measured for various compositions in the ceramics. The pyroelectric coefficient and spontaneous polarization were measured by the static Byer-Roundy method as a function of temperature. The values of dielectric constant, piezoelectric d/sub 33/ constant and pyroelectric coefficient for Sr-doped PMT-PT are larger compared to the values observed for undoped PMT-PT ceramics. Transition temperature is continuously shifted to lower temperature with increase of a small amount of SrCO/sub 3/.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"810-811"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85957930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522363
M. Creedon, S. Gopalakrishnan, W. Schulze
Application of reticulated ceramic technology to the fabrication of 3-3 lead zirconate-titanate (PZT)/epoxy composite hydrophones has been investigated. Directional distortion of the ceramic structure to enhance the composite hydrostatic response has also been studied. Composite fabrication is described and the effects of polymer type, distortion, volume percent PZT and poling field on the hydrophone properties are presented. In general, the results indicate that reticulated ceramic composites (RCCs) have properties which are comparable to other 3-3 PZT/epoxy composites. Composites which contained the stiffer Spurr epoxy significantly out performed those containing a softer Eccogel epoxy. In addition, a distorted structure and higher density improved hydrophone response. The novel use of reticulated ceramic technology provides substantial improvement in manufacturability over other methods and allows fabrication of sensitive, low density hydrophones.
{"title":"3-3 composite hydrophones from distorted reticulated ceramics","authors":"M. Creedon, S. Gopalakrishnan, W. Schulze","doi":"10.1109/ISAF.1994.522363","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522363","url":null,"abstract":"Application of reticulated ceramic technology to the fabrication of 3-3 lead zirconate-titanate (PZT)/epoxy composite hydrophones has been investigated. Directional distortion of the ceramic structure to enhance the composite hydrostatic response has also been studied. Composite fabrication is described and the effects of polymer type, distortion, volume percent PZT and poling field on the hydrophone properties are presented. In general, the results indicate that reticulated ceramic composites (RCCs) have properties which are comparable to other 3-3 PZT/epoxy composites. Composites which contained the stiffer Spurr epoxy significantly out performed those containing a softer Eccogel epoxy. In addition, a distorted structure and higher density improved hydrophone response. The novel use of reticulated ceramic technology provides substantial improvement in manufacturability over other methods and allows fabrication of sensitive, low density hydrophones.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"22 1","pages":"299-302"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76975004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522476
S. Chu, K. Uchino
Photostriction in ferroelectrics arises from a superposition of photovoltaic and inverse piezoelectric effects. This phenomenon provides promise for photo-acoustic devices, when the response has been sufficiently improved. In this paper, B-site donor doping was investigated in (Pb,La)(Zr,Ti)O/sub 3/ based ceramics with the aim of improving the response speed. Using a PLZT bimorph configuration, a photoacoustic device was fabricated, and the fundamental mechanical resonance was observed under intermittent illumination of purple-color light, having neither electric lead wires nor electric circuit.
{"title":"Photo-acoustic devices using (Pb,La)(Zr,Ti)O/sub 3/ ceramics","authors":"S. Chu, K. Uchino","doi":"10.1109/ISAF.1994.522476","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522476","url":null,"abstract":"Photostriction in ferroelectrics arises from a superposition of photovoltaic and inverse piezoelectric effects. This phenomenon provides promise for photo-acoustic devices, when the response has been sufficiently improved. In this paper, B-site donor doping was investigated in (Pb,La)(Zr,Ti)O/sub 3/ based ceramics with the aim of improving the response speed. Using a PLZT bimorph configuration, a photoacoustic device was fabricated, and the fundamental mechanical resonance was observed under intermittent illumination of purple-color light, having neither electric lead wires nor electric circuit.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"26 1","pages":"743-745"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81232893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522321
E. Furman, G. Li, G. Haertling
A stress-biased, domed, electromechanical bender called a Rainbow was recently developed. Displacement characteristics for Rainbow devices based on piezoelectric PLZT compositions were studied in the frequency range far below the fundamental resonant mode frequency. Experimentally obtained field-induced displacements were compared with those predicted by a finite element model. The model underestimated the observed displacements. Low frequency relaxation of the displacements was observed experimentally.
{"title":"Electromechanical properties of Rainbow devices","authors":"E. Furman, G. Li, G. Haertling","doi":"10.1109/ISAF.1994.522321","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522321","url":null,"abstract":"A stress-biased, domed, electromechanical bender called a Rainbow was recently developed. Displacement characteristics for Rainbow devices based on piezoelectric PLZT compositions were studied in the frequency range far below the fundamental resonant mode frequency. Experimentally obtained field-induced displacements were compared with those predicted by a finite element model. The model underestimated the observed displacements. Low frequency relaxation of the displacements was observed experimentally.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"34 1","pages":"146-149"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85704630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522353
Kuo-Shung Liu, I. Lin
The densification of SrTiO/sub 3/ materials has been enhanced by using the novel sintering techniques. The hipping and microwave sintering, on the other hand, can enhance the diffusion of the ions markedly such that the undesired feature of the mixed oxide powders is easily overcome and the materials are well sintered. The densification of the materials has already started when microwave sintered at 1220/spl deg/C, but the growth of the grains can occur only when microwave sintered at 1250/spl deg/C. The migration of grain boundaries can be effectively triggered by applying a short temperature pulse at the onset of the densification process.
{"title":"Enhanced densification of SrTiO/sub 3/ perovskite ceramics","authors":"Kuo-Shung Liu, I. Lin","doi":"10.1109/ISAF.1994.522353","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522353","url":null,"abstract":"The densification of SrTiO/sub 3/ materials has been enhanced by using the novel sintering techniques. The hipping and microwave sintering, on the other hand, can enhance the diffusion of the ions markedly such that the undesired feature of the mixed oxide powders is easily overcome and the materials are well sintered. The densification of the materials has already started when microwave sintered at 1220/spl deg/C, but the growth of the grains can occur only when microwave sintered at 1250/spl deg/C. The migration of grain boundaries can be effectively triggered by applying a short temperature pulse at the onset of the densification process.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"156 1","pages":"261-264"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72789965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1994-08-07DOI: 10.1109/ISAF.1994.522405
H.H. Kim, K. Sohn, L. Casas, R. Pfeffer, R. Lareau
Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature ranges of 450-750/spl deg/C. Metal(Pt)-PLT-metal(Pt) (MDM) configuration as a planar capacitor of ULSI DRAM application is fabricated on Pt/Ti/SiO/sub 2//Si multi-layer substrate. The best results of dielectric constant and dissipation factor, using the paraelectric PLT thin film of 200 nm thick, were 1216 and 0.018, respectively. The highest charge storage density was 12.5 /spl mu/C/cm/sup 2/ and the lowest leakage current density was 0.1 /spl mu/A/cm/sup 2/.
{"title":"Paraelectric properties of PLT(28) reactively sputtered by multi-element metal target","authors":"H.H. Kim, K. Sohn, L. Casas, R. Pfeffer, R. Lareau","doi":"10.1109/ISAF.1994.522405","DOIUrl":"https://doi.org/10.1109/ISAF.1994.522405","url":null,"abstract":"Lead lanthanum titanate (PLT, La=28 mol %) thin films were prepared by a multi-element metal target using reactive dc magnetron sputtering system. A post-deposition annealing treatment was applied to all as-deposited PLT thin films at the temperature ranges of 450-750/spl deg/C. Metal(Pt)-PLT-metal(Pt) (MDM) configuration as a planar capacitor of ULSI DRAM application is fabricated on Pt/Ti/SiO/sub 2//Si multi-layer substrate. The best results of dielectric constant and dissipation factor, using the paraelectric PLT thin film of 200 nm thick, were 1216 and 0.018, respectively. The highest charge storage density was 12.5 /spl mu/C/cm/sup 2/ and the lowest leakage current density was 0.1 /spl mu/A/cm/sup 2/.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"1 1","pages":"472-475"},"PeriodicalIF":0.0,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73130434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}