{"title":"An extended symmetric doherty power amplifier with high efficiency over a wide power range","authors":"M. Darwish, A. Pham","doi":"10.1109/MWSYM.2017.8058794","DOIUrl":null,"url":null,"abstract":"We propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA's.","PeriodicalId":6481,"journal":{"name":"2017 IEEE MTT-S International Microwave Symposium (IMS)","volume":"148 1","pages":"1118-1121"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE MTT-S International Microwave Symposium (IMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2017.8058794","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We propose an extended range Doherty power amplifier (DPA) to achieve high efficiency at 9-dB power back-off (PBO) using a novel loading impedance range. The proposed loading impedance range enables the auxiliary transistor to deliver more current so that symmetric devices can be used in the DPA and results in a compact and low loss output combining circuit. A 20-Watt DPA using Gallium nitride high electron mobility transistors (GaN HEMTs) at 3.5 GHz has been developed to demonstrate the concept. Measurements show power added efficiency (PAE) of 69% at 42.9 dBm saturation output power, PAE of 55% at 9-dB PBO, and gain of 12 dB. We believe our proposed DPA has the highest 9-dB PBO PAE of 55% among reported GaN DPA's.
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