{"title":"Current oscillations in semiconductors","authors":"L. Stenflo","doi":"10.1088/0508-3443/18/12/129","DOIUrl":null,"url":null,"abstract":"It is known that current oscillations can occur in semiconductors in constant electric fields if the collision cross sections for carrier scattering are strongly energy dependent. The growth rate of these oscillations is calculated and a new criterion for their existence is developed.","PeriodicalId":9350,"journal":{"name":"British Journal of Applied Physics","volume":"68 1","pages":"1835-1836"},"PeriodicalIF":0.0000,"publicationDate":"1967-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"British Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0508-3443/18/12/129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
It is known that current oscillations can occur in semiconductors in constant electric fields if the collision cross sections for carrier scattering are strongly energy dependent. The growth rate of these oscillations is calculated and a new criterion for their existence is developed.
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