B. Dodson, Guohai Chen, Robert C. Davis, R. Vanfleet
{"title":"Electrical conductivity across the alumina support layer following carbon nanotube growth","authors":"B. Dodson, Guohai Chen, Robert C. Davis, R. Vanfleet","doi":"10.1116/6.0001115","DOIUrl":null,"url":null,"abstract":"Several electrical devices are formed by growing vertically aligned carbon nanotube (CNT) structures directly on a substrate. In order to attain high aspect ratio CNT forest growths, a support layer for the CNT catalyst, usually alumina, is generally required. In many cases, it has been found that current can pass from a conductive substrate, across the alumina support layer, and through the CNTs with minimal resistance. This is surprising in the cases where alumina is used because alumina has a resistivity of ρ>1014 Ω cm. This paper explores the mechanism responsible for current being able to cross the alumina support layer with minimal resistance following CNT growth by using scanning transmission electron microscopy imaging, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and two-point current-voltage (I-V) measurements. Through these methods, it is determined that exposure to the carbonaceous gas used during the CNT growth process is primarily responsible for this phenomenon.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":"34 1","pages":"052803"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0001115","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Several electrical devices are formed by growing vertically aligned carbon nanotube (CNT) structures directly on a substrate. In order to attain high aspect ratio CNT forest growths, a support layer for the CNT catalyst, usually alumina, is generally required. In many cases, it has been found that current can pass from a conductive substrate, across the alumina support layer, and through the CNTs with minimal resistance. This is surprising in the cases where alumina is used because alumina has a resistivity of ρ>1014 Ω cm. This paper explores the mechanism responsible for current being able to cross the alumina support layer with minimal resistance following CNT growth by using scanning transmission electron microscopy imaging, energy dispersive x-ray spectroscopy, secondary ion mass spectroscopy, and two-point current-voltage (I-V) measurements. Through these methods, it is determined that exposure to the carbonaceous gas used during the CNT growth process is primarily responsible for this phenomenon.