{"title":"A 1 MHz eGaN FET based 4-switch buck-boost converter for automotive applications","authors":"Chenhao Nan, Tong Yao, R. Ayyanar","doi":"10.1109/WIPDA.2015.7369311","DOIUrl":null,"url":null,"abstract":"This paper presents the development of a 1 MHz enhancement mode GaN (eGaN) FET based 4-switch buck-boost converter with bootstrap driver for automotive applications. Conventionally, with Si MOSFETs, it is difficult to optimize the efficiency of a 4-switch buck-boost converter since the high side switches need to switch at high frequency or completely conduct the output/input current in either buck or boost operation mode. GaN FET with much lower Figure of Merit provides the possibility to achieve high efficiency of 4-switch buck-boost converter at MHz switching frequency. This paper investigates the challenges of using bootstrap driver in MHz 4-switch buck-boost converter, and presents associated solutions. A 6-45Vin, 10V/7A, 1 MHz eGaN FET based 4-switch buck-boost converter is built and measured high conversion efficiency confirms the superior performance with GaN FET.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"33 1","pages":"365-370"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WIPDA.2015.7369311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper presents the development of a 1 MHz enhancement mode GaN (eGaN) FET based 4-switch buck-boost converter with bootstrap driver for automotive applications. Conventionally, with Si MOSFETs, it is difficult to optimize the efficiency of a 4-switch buck-boost converter since the high side switches need to switch at high frequency or completely conduct the output/input current in either buck or boost operation mode. GaN FET with much lower Figure of Merit provides the possibility to achieve high efficiency of 4-switch buck-boost converter at MHz switching frequency. This paper investigates the challenges of using bootstrap driver in MHz 4-switch buck-boost converter, and presents associated solutions. A 6-45Vin, 10V/7A, 1 MHz eGaN FET based 4-switch buck-boost converter is built and measured high conversion efficiency confirms the superior performance with GaN FET.
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