{"title":"A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.","authors":"Sutanu Dutta","doi":"10.1109/ISPTS.2012.6260952","DOIUrl":null,"url":null,"abstract":"A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.","PeriodicalId":6431,"journal":{"name":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 1st International Symposium on Physics and Technology of Sensors (ISPTS-1)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPTS.2012.6260952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.
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