A theoretical approach to study the temperature dependent performance of a SiC MESFET in sensor application.

Sutanu Dutta
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引用次数: 1

Abstract

A temperature dependent theoretical current voltage model of a SiC MESFET is applied to study the performance of the device in sensor application. The linearity performance of the drain current with device temperature is studied for different device parameters like applied biases, gate length and doping concentration. The temperature sensitivity of the device is also calculated for different gate length and doping concentration.
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一种研究传感器中SiC MESFET温度相关性能的理论方法。
建立了SiC MESFET的温度依赖理论电流电压模型,研究了该器件在传感器中的性能。研究了在外加偏置、栅极长度和掺杂浓度等不同器件参数下漏极电流随器件温度的线性特性。计算了不同栅长和掺杂浓度下器件的温度灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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