{"title":"Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in AlGaN/GaN HEMTs","authors":"Yonghao Jia, Yuehang Xu, Yong-xin Guo","doi":"10.1109/MWSYM.2018.8439201","DOIUrl":null,"url":null,"abstract":"In this paper, buffer-related charge tapping effect is modeled as threshold voltage shifts for the first time in AlGaN/ GaN HEMTs. The threshold voltage shifts are described by a threshold voltage model, which does not contain any fitting parameters and is also continuously differentiable. The threshold voltage model can be easily implemented into a compact large-signal model. The large-signal model with trapping effects can accurately predict the dynamic I-V behavior, S-parameters up to 14 GHz, and large-signal output characteristics.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"11 1","pages":"724-727"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE/MTT-S International Microwave Symposium - IMS","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2018.8439201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, buffer-related charge tapping effect is modeled as threshold voltage shifts for the first time in AlGaN/ GaN HEMTs. The threshold voltage shifts are described by a threshold voltage model, which does not contain any fitting parameters and is also continuously differentiable. The threshold voltage model can be easily implemented into a compact large-signal model. The large-signal model with trapping effects can accurately predict the dynamic I-V behavior, S-parameters up to 14 GHz, and large-signal output characteristics.
本文首次在AlGaN/ GaN hemt中,将缓冲相关电荷分接效应建模为阈值电压偏移。阈值电压的位移由一个阈值电压模型来描述,该模型不包含任何拟合参数,并且是连续可微的。阈值电压模型可以很容易地实现为一个紧凑的大信号模型。具有捕获效应的大信号模型可以准确地预测动态I-V行为、高达14 GHz的s参数和大信号输出特性。