Speech can be recorded contact-free using the Doppler effect with a radar microphone and comprehensible results can be achieved even in a noisy environment. For that purpose, the transmit frequency must be higher than 100 GHz to measure enough harmonics of the skin vibration. This paper presents a 160 GHz radar MMIC with a transition to a flexible dielectric waveguide and a plugged antenna for a radar microphone application. With the flexible antenna front-end made of high density polyethylene a comfortable and easy attachment similar to an ordinary microphone is possible. The measured speech signals are comprehensible with the fundamental frequency and at least three harmonics. The background noise does not affect the speech signal as proven in measurements.
{"title":"Improved Throat Vibration Sensing with a Flexible 160-GHz Radar through Harmonic Generation","authors":"M. Geiger, Denis Schlotthauer, C. Waldschmidt","doi":"10.18725/OPARU-9863","DOIUrl":"https://doi.org/10.18725/OPARU-9863","url":null,"abstract":"Speech can be recorded contact-free using the Doppler effect with a radar microphone and comprehensible results can be achieved even in a noisy environment. For that purpose, the transmit frequency must be higher than 100 GHz to measure enough harmonics of the skin vibration. This paper presents a 160 GHz radar MMIC with a transition to a flexible dielectric waveguide and a plugged antenna for a radar microphone application. With the flexible antenna front-end made of high density polyethylene a comfortable and easy attachment similar to an ordinary microphone is possible. The measured speech signals are comprehensible with the fundamental frequency and at least three harmonics. The background noise does not affect the speech signal as proven in measurements.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"10 1","pages":"123-126"},"PeriodicalIF":0.0,"publicationDate":"2018-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74858069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-10DOI: 10.1109/MWSYM.2018.8439337
Nhu-Huan Nguyen, A. Ghiotto, T. Vuong, A. Vilcot, F. Parment, K. Wu
The slab air-filled substrate integrated waveguide (SAFSIW) is presented as a compromise between the high performance air-filled substrate integrated waveguide (AFSIW) and low profile dielectric-filled substrate integrated waveguide (DFSIW). Both theoretical and experimental studies are presented in order to investigate SAFSIW structures. To the authors' best knowledge, this is the first time that an SAFSIW-to-DFSIW transition is reported. A 90° phase shifter based on SAFSIW and a patent pending mounting process is also introduced. Measured results show a very high figure of merit (FoM) over the Ka-band. A phase difference of $mathbf{86}pm mathbf{5}.mathbf{4}^{pmb{circ}}$, an amplitude imbalance of $mathbf{0}.mathbf{05}pm mathbf{0}.mathbf{15} mathbf{dB}$ and a FoM of $mathbf{457}^{pmb{circ}}/mathbf{dB}$ are obtained.
{"title":"Slab Air-Filled Substrate Integrated Waveguide","authors":"Nhu-Huan Nguyen, A. Ghiotto, T. Vuong, A. Vilcot, F. Parment, K. Wu","doi":"10.1109/MWSYM.2018.8439337","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439337","url":null,"abstract":"The slab air-filled substrate integrated waveguide (SAFSIW) is presented as a compromise between the high performance air-filled substrate integrated waveguide (AFSIW) and low profile dielectric-filled substrate integrated waveguide (DFSIW). Both theoretical and experimental studies are presented in order to investigate SAFSIW structures. To the authors' best knowledge, this is the first time that an SAFSIW-to-DFSIW transition is reported. A 90° phase shifter based on SAFSIW and a patent pending mounting process is also introduced. Measured results show a very high figure of merit (FoM) over the Ka-band. A phase difference of $mathbf{86}pm mathbf{5}.mathbf{4}^{pmb{circ}}$, an amplitude imbalance of $mathbf{0}.mathbf{05}pm mathbf{0}.mathbf{15} mathbf{dB}$ and a FoM of $mathbf{457}^{pmb{circ}}/mathbf{dB}$ are obtained.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"56 1","pages":"312-315"},"PeriodicalIF":0.0,"publicationDate":"2018-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85886098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-10DOI: 10.1109/MWSYM.2018.8439449
J. Stegner, M. Fischer, S. Gropp, U. Stehr, J. Müller, M. Hoffmann, M. Hein
Due to the increasing number of mobile-communication standards in wireless devices, the need for oscillators generating more than one frequency is rising. Especially in the radio-frequency domain, micro-electromechanical systems (MEMS)-based oscillators are advantageous hardware components because of their small size, excellent phase-noise performance and low power consumption. To reach oscillation frequencies above 1GHz, and to change the frequency of oscillation, dedicated circuit topologies are required. In this paper, the design, fabrication, and measurement of a multi-frequency MEMS oscillator employing two different MEMS resonators and covering the frequency range from 11.7 MHz to 1.9 GHz is described. By using an application-specific integrated circuit, the scope of functions can be increased without changing the module size, e.g., by an integrated frequency doubler to raise the upper frequency limit provided by the MEMS-resonator technology. As a result, the highest oscillation frequency could be achieved with good phase-noise performance as compared to the state-of-the-art.
{"title":"A Multi-Frequency MEMS-Based RF Oscillator Covering the Range from 11.7 MHz to 1.9 GHz","authors":"J. Stegner, M. Fischer, S. Gropp, U. Stehr, J. Müller, M. Hoffmann, M. Hein","doi":"10.1109/MWSYM.2018.8439449","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439449","url":null,"abstract":"Due to the increasing number of mobile-communication standards in wireless devices, the need for oscillators generating more than one frequency is rising. Especially in the radio-frequency domain, micro-electromechanical systems (MEMS)-based oscillators are advantageous hardware components because of their small size, excellent phase-noise performance and low power consumption. To reach oscillation frequencies above 1GHz, and to change the frequency of oscillation, dedicated circuit topologies are required. In this paper, the design, fabrication, and measurement of a multi-frequency MEMS oscillator employing two different MEMS resonators and covering the frequency range from 11.7 MHz to 1.9 GHz is described. By using an application-specific integrated circuit, the scope of functions can be increased without changing the module size, e.g., by an integrated frequency doubler to raise the upper frequency limit provided by the MEMS-resonator technology. As a result, the highest oscillation frequency could be achieved with good phase-noise performance as compared to the state-of-the-art.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"23 1","pages":"575-578"},"PeriodicalIF":0.0,"publicationDate":"2018-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86946298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-10DOI: 10.1109/MWSYM.2018.8439158
P. Theofanopoulos, G. Trichopoulos
We propose a THz imaging technique that uses high reflective index optics to improve spatial resolution and enable a novel biometrics imaging tool. Specifically, with the use of THz waves we can penetrate the drier outer skin layers and provide anatomical information on the skin's layered morphology and the underlying structures (e.g. sweat ducts). Sweat ducts are subcutaneous helical structures that exhibit absorption in the sub-THz frequency range. The proposed THz microscopy configuration can acquire high spatial resolution images of the human skin and classify sweat ducts based on the backscattered THz spectrum. In this paper, the theoretical background of the microscopy technique and the experimental design are discussed. Finally, THz images of human fingerprints are presented, verifying the imaging capabilities of the proposed configuration.
{"title":"A Terahertz Microscopy Technique for Sweat Duct Detection","authors":"P. Theofanopoulos, G. Trichopoulos","doi":"10.1109/MWSYM.2018.8439158","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439158","url":null,"abstract":"We propose a THz imaging technique that uses high reflective index optics to improve spatial resolution and enable a novel biometrics imaging tool. Specifically, with the use of THz waves we can penetrate the drier outer skin layers and provide anatomical information on the skin's layered morphology and the underlying structures (e.g. sweat ducts). Sweat ducts are subcutaneous helical structures that exhibit absorption in the sub-THz frequency range. The proposed THz microscopy configuration can acquire high spatial resolution images of the human skin and classify sweat ducts based on the backscattered THz spectrum. In this paper, the theoretical background of the microscopy technique and the experimental design are discussed. Finally, THz images of human fingerprints are presented, verifying the imaging capabilities of the proposed configuration.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"15 1","pages":"864-867"},"PeriodicalIF":0.0,"publicationDate":"2018-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85842799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439266
Shaun C. Preston, P. Sibbons, M. White, C. Hancock
This paper presents a new haemostatic device utilising microwave energy at 5.8GHz along with the ability to introduce adrenaline for vasoconstriction or other fluids as required. A radiative tip was designed, simulated and manufactured to provide good match into tissue. The complete device was then tested under preclinical conditions at Northwick Park Institute for Medical Research (NPIMR); the results of which along with histological anaylsis are presented herein.
{"title":"Preclinical Efficacy of a Microwave and Adrenaline based Haemostat Utilising a Novel Co-axial Cable Structure","authors":"Shaun C. Preston, P. Sibbons, M. White, C. Hancock","doi":"10.1109/MWSYM.2018.8439266","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439266","url":null,"abstract":"This paper presents a new haemostatic device utilising microwave energy at 5.8GHz along with the ability to introduce adrenaline for vasoconstriction or other fluids as required. A radiative tip was designed, simulated and manufactured to provide good match into tissue. The complete device was then tested under preclinical conditions at Northwick Park Institute for Medical Research (NPIMR); the results of which along with histological anaylsis are presented herein.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"74 1","pages":"1569-1572"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74152315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439537
Matthew S. Clements, A. Pham, J. Sacks, Bert C. Henderson, Steve E. Avery
In this paper, for the first time we develop and benchmark the performance of three down-converting Field Effect Transistor (FE T) resistive mixers at millimeter wave (mm W) frequencies employing $pmb{0.15-mu mathrm{m}}$ enhancement (E)-mode Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistors (pHEMTs), depletion (D)-mode GaAs pHEMTs, and D-mode Gallium Nitride (GaN) pHEMTs. Our experimental results at 27 GHz demonstrate that the E-mode mixer achieves the highest reported input 3rd order intercept point (IIP3) of 37.5dBm at mm W frequencies to the best of our knowledge. Also, operating at the same LO drive up to 20 dBm, the E-mode GaAs mixer impressively out performs both the D-mode GaAs and GaN mixers.
{"title":"Comparison of Highly Linear Resistive Mixers in Depletion and Enhancement Mode GaAs and GaN pHEMTs at Ka Band","authors":"Matthew S. Clements, A. Pham, J. Sacks, Bert C. Henderson, Steve E. Avery","doi":"10.1109/MWSYM.2018.8439537","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439537","url":null,"abstract":"In this paper, for the first time we develop and benchmark the performance of three down-converting Field Effect Transistor (FE T) resistive mixers at millimeter wave (mm W) frequencies employing $pmb{0.15-mu mathrm{m}}$ enhancement (E)-mode Gallium Arsenide (GaAs) pseudomorphic high electron mobility transistors (pHEMTs), depletion (D)-mode GaAs pHEMTs, and D-mode Gallium Nitride (GaN) pHEMTs. Our experimental results at 27 GHz demonstrate that the E-mode mixer achieves the highest reported input 3rd order intercept point (IIP3) of 37.5dBm at mm W frequencies to the best of our knowledge. Also, operating at the same LO drive up to 20 dBm, the E-mode GaAs mixer impressively out performs both the D-mode GaAs and GaN mixers.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"7 1","pages":"435-438"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74919947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439632
Matthew A. Stoneback, K. Madsen
We describe the design of an active electronically steerable antenna array (AESA) enabling broadband line-of-sight communication from a high-altitude platforms (HAPs). The array is constructed using a multitude of single chip multi-channel beamforming modules capable of switched bi-directional amplitude and phase conditioning at Ka-band enabling a sharing of aperture between transmitting and receiving functions. Use of an open-ended substrate-integrated square waveguide enables wide field of regard. Measured performance of a 256-element AESA using a spherical near-field measurement technique allows for indirect characterization of both far-field gain and excitation uniformity.
{"title":"A Planar All-Silicon 256-Element Ka-band Phased Array for High-Altitude Platforms (HAPs) Application","authors":"Matthew A. Stoneback, K. Madsen","doi":"10.1109/MWSYM.2018.8439632","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439632","url":null,"abstract":"We describe the design of an active electronically steerable antenna array (AESA) enabling broadband line-of-sight communication from a high-altitude platforms (HAPs). The array is constructed using a multitude of single chip multi-channel beamforming modules capable of switched bi-directional amplitude and phase conditioning at Ka-band enabling a sharing of aperture between transmitting and receiving functions. Use of an open-ended substrate-integrated square waveguide enables wide field of regard. Measured performance of a 256-element AESA using a spherical near-field measurement technique allows for indirect characterization of both far-field gain and excitation uniformity.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"42 1","pages":"783-786"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75456460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439440
M. Hossain, M. Hrobak, D. Stoppel, W. Heinricb, V. Krozer
This paper presents an active W-band up-converting double-balanced Gilbert mixer realized in 800 nm transferred substrate (TS) InP-DHBT technology. It consists of an active balun and a frequency doubler followed by a double-balanced Gilbert cell mixer. The local oscillator (LO) of the mixer operates from 39 to 45 GHz with an input power of less than 3 dBm. The mixer achieves a single sideband (SSB) conversion gain of $mathbf{8} mathbf{dB}pm mathbf{2} mathbf{dB}$ in the frequency range 75 … 96 GHz. The measured output 1 dB compression $(mathbf{OP}_{mathbf{1}mathbf{dB}})$ reaches −7 dBm and −8.5 dBm at 75 GHz and 86 GHz, respectively. The up-converter offers more than 15 GHz IF bandwidth, at a DC consumption of only 80 mW.
{"title":"An Active High Conversion Gain W-Band Up-Converting Mixer for Space Applications","authors":"M. Hossain, M. Hrobak, D. Stoppel, W. Heinricb, V. Krozer","doi":"10.1109/MWSYM.2018.8439440","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439440","url":null,"abstract":"This paper presents an active W-band up-converting double-balanced Gilbert mixer realized in 800 nm transferred substrate (TS) InP-DHBT technology. It consists of an active balun and a frequency doubler followed by a double-balanced Gilbert cell mixer. The local oscillator (LO) of the mixer operates from 39 to 45 GHz with an input power of less than 3 dBm. The mixer achieves a single sideband (SSB) conversion gain of $mathbf{8} mathbf{dB}pm mathbf{2} mathbf{dB}$ in the frequency range 75 … 96 GHz. The measured output 1 dB compression $(mathbf{OP}_{mathbf{1}mathbf{dB}})$ reaches −7 dBm and −8.5 dBm at 75 GHz and 86 GHz, respectively. The up-converter offers more than 15 GHz IF bandwidth, at a DC consumption of only 80 mW.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"34 1","pages":"682-685"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75580721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439336
Myungsoo Kim, Saungeun Park, A. Sanne, S. Banerjee, D. Akinwande
In this paper, we report state-of-the-art large area CVD monolayer MoS2-based RF transistors and RF switches. An embedded gate structure was used to fabricate short channel CVD Mos2Rf FETs with an intrinsic fT of 20 GHz, intrinsic $mathbf{f}_{mathbf{max}}$ of 11.4 GHz, and the high-field saturation velocity Vsat of $mathbf{1.88}times mathbf{10}^{mathbf{6}} mathbf{cm}/mathbf{s}$. The gate-first process allows for enhancement mode operation, $mathbf{I}_{mathbf{ON}}/mathbf{I}_{mathbf{OFF}}$ ratio of $mathbf{10}^{mathbf{8}}$, and a transconductance $(mathbf{g}_{mathbf{m}})$ of 70 $pmb{mu} mathbf{S}/pmb{mu}mathbf{m}$. Also, we use a vertical MIM structure for a RF switch based on CVD Mos2. The device was programmed with a voltage as low as 1 V, and achieves an ON-state resistance of $sim mathbf{5} pmb{Omega}$ and an OFF-state capacitance of ~6 fF. We measured and simulated the RF performance of the device up to 50 GHz and report 0.5 dB insertion loss, 15 dB isolation (both at 50 GHz), and 5 THz cutoff frequency.
{"title":"Towards mm-wave nanoelectronics and RF switches using MoS2 2D Semiconductor","authors":"Myungsoo Kim, Saungeun Park, A. Sanne, S. Banerjee, D. Akinwande","doi":"10.1109/MWSYM.2018.8439336","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439336","url":null,"abstract":"In this paper, we report state-of-the-art large area CVD monolayer MoS2-based RF transistors and RF switches. An embedded gate structure was used to fabricate short channel CVD Mos2Rf FETs with an intrinsic fT of 20 GHz, intrinsic $mathbf{f}_{mathbf{max}}$ of 11.4 GHz, and the high-field saturation velocity Vsat of $mathbf{1.88}times mathbf{10}^{mathbf{6}} mathbf{cm}/mathbf{s}$. The gate-first process allows for enhancement mode operation, $mathbf{I}_{mathbf{ON}}/mathbf{I}_{mathbf{OFF}}$ ratio of $mathbf{10}^{mathbf{8}}$, and a transconductance $(mathbf{g}_{mathbf{m}})$ of 70 $pmb{mu} mathbf{S}/pmb{mu}mathbf{m}$. Also, we use a vertical MIM structure for a RF switch based on CVD Mos2. The device was programmed with a voltage as low as 1 V, and achieves an ON-state resistance of $sim mathbf{5} pmb{Omega}$ and an OFF-state capacitance of ~6 fF. We measured and simulated the RF performance of the device up to 50 GHz and report 0.5 dB insertion loss, 15 dB isolation (both at 50 GHz), and 5 THz cutoff frequency.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"20 3","pages":"352-354"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72578763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/MWSYM.2018.8439854
Aviv Barabi, Noam Ross, Amity Wolfman, O. Shaham, E. Socher
In this work a W-Band power amplifier is presented in $pmb{0.1 mumathrm{m}}$ GaAs pHEMT. The amplifier is composed of $pmb{1times 4}$ and $pmb{1times 8}$ driving stages for high gain and of three successive $pmb{1times 8}$ power stages for high power. The stages were designed using a developed generic unconditionally stable unit cell. The output combiner was designed very efficiently with only 0.75 dB insertion loss to present each active device with $mathbf{Z_{opt}}$. The amplifier has a small-signal gain above 25 dB and more than 26 dBm $mathrm{P}_{mathrm{sat}}$ over 93–102 GHz. Due to the chosen topology, the amplifier presents a rapid saturation achieving almost $mathrm{P}_{mathrm{sat}}$ after 6 dB compression. The PA demonstrates a peak output power of 27.3 dBm between 96–98 GHz. The measured PAE is around 12% over 93–102 GHz. It is the first power amplifier in GaAs demonstrating 0.5W of output power above 90GHz. The chip size is $pmb{3times 3 mathrm{mm}^{2}}$ including pads.
{"title":"A +27 dBm Psat 27 dB Gain W-Band Power Amplifier in $0.1 mu mathrm{m}$ GaAs","authors":"Aviv Barabi, Noam Ross, Amity Wolfman, O. Shaham, E. Socher","doi":"10.1109/MWSYM.2018.8439854","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439854","url":null,"abstract":"In this work a W-Band power amplifier is presented in <tex>$pmb{0.1 mumathrm{m}}$</tex> GaAs pHEMT. The amplifier is composed of <tex>$pmb{1times 4}$</tex> and <tex>$pmb{1times 8}$</tex> driving stages for high gain and of three successive <tex>$pmb{1times 8}$</tex> power stages for high power. The stages were designed using a developed generic unconditionally stable unit cell. The output combiner was designed very efficiently with only 0.75 dB insertion loss to present each active device with <tex>$mathbf{Z_{opt}}$</tex>. The amplifier has a small-signal gain above 25 dB and more than 26 dBm <tex>$mathrm{P}_{mathrm{sat}}$</tex> over 93–102 GHz. Due to the chosen topology, the amplifier presents a rapid saturation achieving almost <tex>$mathrm{P}_{mathrm{sat}}$</tex> after 6 dB compression. The PA demonstrates a peak output power of 27.3 dBm between 96–98 GHz. The measured PAE is around 12% over 93–102 GHz. It is the first power amplifier in GaAs demonstrating 0.5W of output power above 90GHz. The chip size is <tex>$pmb{3times 3 mathrm{mm}^{2}}$</tex> including pads.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"110 1","pages":"1345-1347"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78405213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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