Techniques of radiation contamination monitoring for extreme ultraviolet devices

Abstract

This paper reviews the "in situ"surface analysis and monitoring techniques for contamination induced in Extreme Ultraviolet Lithography( EUVL). It introduces the EUV lithography,reflective multilayer mirror and the mechanism of carbon contamination induced by EUV. It points out the requirement of the "in situ"surface analysis techniques in EUV lithography. The mainly surface analysis techniques are discussed. Analyzed results show the applied potentiality of each measurement used in the EUV optical system. Finally,it points out that the Fiber-based ellipsometry has further application prospect in "in situ"surface contamination monitoring of EUV lithography.