D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus
{"title":"Ion implanted monolithically integrated planar InP/InGaAs/InP:Fe photoreceiver","authors":"D. Rømer, H. Albrecht, L. Hoffmann, J. Walter, G. Ebbinghaus","doi":"10.1109/ICIPRM.1991.147401","DOIUrl":null,"url":null,"abstract":"The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5- mu m gate length have been adjusted with a selective p implantation beneath the channel layer.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"6 1","pages":"415-418"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147401","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The structure and fabrication of an integrated pin photodiode (PD) and junction field-effect transistor (JFET) are discussed. A 3-dB bandwidth of 5.8 GHz and an external quantum efficiency of 87% for the PD have been achieved using a selective n implantation to reduce the series resistance. The pinch off voltage and drain current of the JFET with a 1.5- mu m gate length have been adjusted with a selective p implantation beneath the channel layer.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
![[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials](/Content/css/sci/img/zetp.jpg)
求助内容：
应助结果提醒方式：
扫码关注我们
