{"title":"InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FET logic applications","authors":"Y. Chan, D. Pavlidis","doi":"10.1109/ICIPRM.1991.147465","DOIUrl":null,"url":null,"abstract":"The design of InAlAs/In/sub x/Ga/sub 1-x/As (x>or=0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g/sub m/,K) and microwave (f/sub T/, f/sub max/) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was mu =12890 cm/sup 2//V-s, gm=438 mS/mm, f/sub T/=27 GHz. Orientation effects indicate a V/sub th/ shift up to -0.128 V and a very small g/sub m/ variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"86 1","pages":"242-245"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147465","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The design of InAlAs/In/sub x/Ga/sub 1-x/As (x>or=0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g/sub m/,K) and microwave (f/sub T/, f/sub max/) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was mu =12890 cm/sup 2//V-s, gm=438 mS/mm, f/sub T/=27 GHz. Orientation effects indicate a V/sub th/ shift up to -0.128 V and a very small g/sub m/ variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel.<>
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