Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire

Akshaykumar Salimath, S. Chishti, A. Verma, B. Bishnoi, B. Ghosh
{"title":"Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire","authors":"Akshaykumar Salimath, S. Chishti, A. Verma, B. Bishnoi, B. Ghosh","doi":"10.1109/CDE.2013.6481375","DOIUrl":null,"url":null,"abstract":"In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D'yakonov-Perel' relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"22 1","pages":"191-194"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Spanish Conference on Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE.2013.6481375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D'yakonov-Perel' relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.
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锗纳米线中温度和约束相关自旋输运的蒙特卡罗模拟
本文采用半经典蒙特卡罗方法研究了锗纳米线中的自旋极化输运。采用蒙特卡洛[2]方法,因为它能够动态地更新自旋演化与电子输运引起的动量演化同步。锗纳米线中的自旋失相是由于结构反转不对称(Rashba自旋-轨道耦合)引起的D'yakonov- perel '弛豫[3,4]。在模拟中考虑了由Elliott-Yafet[3]引起的自旋翻转,研究了不同温度和约束条件下锗纳米线的自旋弛豫。电子在z方向上被极化注入。导线截面在2×2 nm2和10×10 nm2之间变化。
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