Effect of Texture and Grain Size on the Compressive Creep of Ti 3SiC 2 MAX Phase Ceramics

Apurv Dash, J. Malzbender, M. Rasinski, O. Guillon, Jesus Julian Gonzalez
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Abstract

The sintering and simultaneous texturing of Ti3SiC2 MAX phase ceramics have been reported. The degree of orientation of Ti3SiC2 grains were quantified with X-ray diffraction for the bulk crystallographic texture and electron back scattered diffraction for local and morphological texture. Analysis revealed that the basal plane of Ti3SiC2 was aligned perpendicular to the direction of applied external force during sintering. The textured MAX phase was subjected to high temperature annealing to induce grain growth which resulted in a duplex microstructure. The ceramics with fine (~1 µm) and duplex (500 µm wide elongated grains in a matrix of equiaxed 1 µm grains) microstructure were subjected to compressive creep tests at high temperature (1000-1300 °C) in different directions with respect the orientation of the crystals in the bulk Ti3SiC2. The creep resistance was highest for fine grained Ti3SiC2 with basal planes aligned perpendicular to the direction of applied stress, whereas the ceramics with duplex microstructure and basal plane aligned parallel to the direction of applied stress suffered the highest creep deformation. A probable mechanism for the creep response of the different grades of Ti3SiC2 has been proposed.
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织构和晶粒尺寸对ti3sic2max相陶瓷压缩蠕变的影响
报道了Ti3SiC2 MAX相陶瓷的烧结和同时织构。采用x射线衍射分析了Ti3SiC2晶粒的体晶织构,电子背散射衍射分析了Ti3SiC2晶粒的局部和形态织构。分析表明,在烧结过程中,Ti3SiC2的基面垂直于施加外力的方向。对织构的MAX相进行高温退火,诱导晶粒长大,形成双相组织。在高温(1000 ~ 1300℃)下,对具有细晶(~1µm)和双晶(500µm宽的细长晶粒在1µm等轴晶粒的基体中)的陶瓷进行了不同方向的压缩蠕变试验。基面垂直于外加应力方向的细晶Ti3SiC2陶瓷的抗蠕变能力最强,而基面平行于外加应力方向的双相陶瓷的蠕变能力最强。提出了不同等级的Ti3SiC2的蠕变响应的可能机理。
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