Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions

IF 1.4 4区 工程技术 Journal of Vacuum Science & Technology B Pub Date : 2022-03-01 DOI:10.1116/6.0001681
Joseph R. Vella, D. Humbird, D. Graves
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氯气和氩离子刻蚀硅原子层的分子动力学研究
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
期刊最新文献
Pneumatic controlled nanosieve for efficient capture and release of nanoparticles Nanofabricating neural networks: Strategies, advances, and challenges Fabrication of sub-micrometer 3D structures for terahertz oscillators by electron beam gray-tone lithography Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions Negative differential resistance in photoassisted field emission from Si nanowires
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