Ferhat Bayram, D. Gajula, Balaadithya Uppalapati, Digangana Khan, G. Koley
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Abstract
In the recent years, studies to develop near-infrared light modulators for imaging and sensing applications have attracted great attention. Here, we report on phase transition induced optical transmittance characteristics variation of electrochromic VO2 thin film grown on GaN membrane for light modulation application. Insulator metal transition (IMT) phase of the VO2 thin film was triggered using an electric field applied on the interdigitated metal electrodes deposited on it. Voltage triggered phase transition resulted in ~45% change in resistance of the thin film and ~11% reduction in transmitted optical power for a 1550 nm laser. Moreover, near-infrared light modulation utilizing IMT properties of the VO2 thin film-based membrane was demonstrated by applying various voltages with pulse widths ranging from 2 ms to 300 µs,
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