An adaptive-bandwidth PLL for avoiding noise interference and DFE-less fast precharge sampling for over 10Gb/s/pin graphics DRAM interface

Junyoung Song, Hyun-Woo Lee, Soo-Bin Lim, Sewook Hwang, Yunsaing Kim, Young-Jung Choi, Byong-Tae Chung, Chulwoo Kim
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引用次数: 7

Abstract

DRAM speed already reaches 7Gb/s/pin for GDDR interface [1,4]. As the bit rate increases, jitter of PLL, data-sampling margin, crosstalk and intersymbol interference (ISI) needs considerable management [1,3,5]. Moreover, as the supply voltage decreases, the self-generated internal noise of DRAM increases due to low efficiency of the internal voltage generator, especially the VPP voltage generator [2]. In general, the sensitivity of PLL to supply noise gives rise to large jitter accumulation. If the supply noise frequency is close to the PLL bandwidth, more jitter peaking occurs. Therefore, the PLL bandwidth is an important parameter to achieve low jitter performance [3]. Crosstalk becomes a crucial issue for over 7Gb/s GDDR interface [1]. However, the complexity of the transmitter and the CIO, capacitance of I/O, increase due to additional equalizers and pre- and de-emphasis drivers. For a compact transmitter, a low-overhead boosted transmitter is developed [4]. This paper presents an adaptive-bandwidth PLL in response to the supply and channel noises, a fast pre-charged data sampler without an additional decision-feedback equalizer (DFE), a crosstalk-induced-jitter-reduction technique and a compact transmitter with pre- and de-emphasis.
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一种自适应带宽锁相环,可用于10Gb/s/引脚以上的图形DRAM接口,避免噪声干扰和无dfe快速预充采样
GDDR接口的DRAM速度已经达到7Gb/s/引脚[1,4]。随着比特率的增加,锁相环的抖动、数据采样余量、串扰和码间干扰(ISI)需要进行大量的管理[1,3,5]。此外,随着电源电压的降低,由于内部电压发生器,特别是VPP电压发生器[2]的效率较低,DRAM的自生内部噪声增大。一般来说,锁相环对电源噪声的敏感性会导致较大的抖动积累。如果电源噪声频率接近锁相环带宽,则会出现更多的抖动峰值。因此,锁相环带宽是实现低抖动性能[3]的重要参数。串扰成为超过7Gb/s GDDR接口[1]的关键问题。然而,由于额外的均衡器和前置和去强调驱动,变送器和CIO (I/O电容)的复杂性增加了。针对小型发射机,研制了低开销增强发射机[4]。本文提出了一种响应电源和信道噪声的自适应带宽锁相环,一种无需额外决策反馈均衡器(DFE)的快速预充电数据采样器,一种串扰诱导抖动减少技术和一种具有预强调和去强调的紧凑型发射机。
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