F. P. Luce, S. Reboh, E. Vilain, F. Madeira, J. Barnes, N. Rochat, T. Salvetat, A. Tauzin, F. Milési, F. Mazen, C. Deguet
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引用次数: 5
Abstract
The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from -15 °C to 230 °C. Implanted and annealed samples were analyzed by optical microscopy, SIMS and FTIR. The obtained results are discussed in terms of the formation of VInHx complexes that seems to be efficient H trapping centers, probably being the precursors of the fracture process in InP.
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