Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940018
A. Robbes, K.-A. Bui-T Meura, M. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon
The transition to semiconductor manufacturing on 450mm wafers continues to be one of the biggest challenges in the semiconductors industry. Even though lithography is critical for 450mm development, process tools such as ion implantation and associated metrology are also challenged by scaling-up to keep acceptable CoO and excellent capabilities. There is a double challenge: scale up to 450mm and cope with shallower or 3D doping specifications. For beam line implanters, the 450mm is challenging: direct beam imposes a process time linear with the implanted area and a throughput which decreases while reducing energy. Therefore the 450mm is a great challenge. Plasma immersion ion implantation (PIII) technology offers a good alternative to beam line implanter with a high throughput at low energy, an implant time independent from the surface area and the possibility to implant on 3D structures. IBS has built a 450 mm PIII prototype based on its PULSION® Technology [1] and is evaluating non uniformity of BF3 implantation on 450 mm n-type wafers. To monitor such a light element we used the Shallow Probe tool, based on a simple, original and unique approach: Low Energy Electron induced X-ray Emission Spectroscopy (LEXES). The wafer is probed by a low energy electron beam and the soft X-rays emission is collected in WDS (Wavelength Dispersive Spectroscopy) spectrometers. The technology uses a dedicated low energy and high current electron column that has been specifically designed by CAMECA to optimize surface analysis instead of bulk analysis [2]. CAMECA is developing a new 450mm tool and collaborates with IBS to provide solutions to semiconductor manufacturers for ion implantation. LEXES results of B dose implant mapping have demonstrated a B dose non-uniformity of less than 4% over a 450mm wafer. Additionally the LEXES tool has been used to assess uniformity of the in-depth localization of the boron implant.
向450mm晶圆的半导体制造过渡仍然是半导体行业面临的最大挑战之一。尽管光刻技术对于450mm的开发至关重要，但为了保持可接受的CoO和卓越的性能，工艺工具(如离子注入和相关计量)也面临着扩大规模的挑战。这是一个双重挑战:放大到450mm，并应对较浅或3D掺杂规格。对于光束线植入器来说，450mm具有挑战性:直接光束施加的过程时间与植入面积成线性关系，并且在降低能量的同时降低了吞吐量。因此，450mm是一个巨大的挑战。等离子体浸没离子注入(PIII)技术是束流注入的一个很好的替代方案，具有低能量、高通量、与表面积无关的植入时间和在3D结构上植入的可能性。IBS基于其浦力®技术[1]构建了450 mm PIII原型，并正在评估BF3在450 mm n型晶圆上植入的不均匀性。为了监测这种轻元素，我们使用了浅探针工具，基于一种简单，原始和独特的方法:低能电子诱导x射线发射光谱(LEXES)。用低能电子束探测晶圆，并在WDS(波长色散光谱)光谱仪中收集软x射线发射。该技术使用CAMECA专门设计的专用低能量大电流电子柱来优化表面分析，而不是本体分析[2]。CAMECA正在开发一种新的450mm工具，并与IBS合作，为半导体制造商提供离子注入解决方案。在450mm晶圆上，B剂量植入物映射的LEXES结果表明，B剂量不均匀性小于4%。此外，lex工具已用于评估硼种植体深度定位的均匀性。
{"title":"Implantation and metrology solutions for low energy boron implant on 450mm wafers","authors":"A. Robbes, K.-A. Bui-T Meura, M. Moret, M. Schuhmacher, F. Torregrosa, G. Borvon","doi":"10.1109/IIT.2014.6940018","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940018","url":null,"abstract":"The transition to semiconductor manufacturing on 450mm wafers continues to be one of the biggest challenges in the semiconductors industry. Even though lithography is critical for 450mm development, process tools such as ion implantation and associated metrology are also challenged by scaling-up to keep acceptable CoO and excellent capabilities. There is a double challenge: scale up to 450mm and cope with shallower or 3D doping specifications. For beam line implanters, the 450mm is challenging: direct beam imposes a process time linear with the implanted area and a throughput which decreases while reducing energy. Therefore the 450mm is a great challenge. Plasma immersion ion implantation (PIII) technology offers a good alternative to beam line implanter with a high throughput at low energy, an implant time independent from the surface area and the possibility to implant on 3D structures. IBS has built a 450 mm PIII prototype based on its PULSION® Technology [1] and is evaluating non uniformity of BF3 implantation on 450 mm n-type wafers. To monitor such a light element we used the Shallow Probe tool, based on a simple, original and unique approach: Low Energy Electron induced X-ray Emission Spectroscopy (LEXES). The wafer is probed by a low energy electron beam and the soft X-rays emission is collected in WDS (Wavelength Dispersive Spectroscopy) spectrometers. The technology uses a dedicated low energy and high current electron column that has been specifically designed by CAMECA to optimize surface analysis instead of bulk analysis [2]. CAMECA is developing a new 450mm tool and collaborates with IBS to provide solutions to semiconductor manufacturers for ion implantation. LEXES results of B dose implant mapping have demonstrated a B dose non-uniformity of less than 4% over a 450mm wafer. Additionally the LEXES tool has been used to assess uniformity of the in-depth localization of the boron implant.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"410 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75188860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939967
N. Toyoda, Asahi Kimura, I. Yamada
Gas cluster ion beams (GCIB) were used for surface modification of amorphous carbon (a-C) or tetrahedral carbon (ta-C) films, and in-vacuum XPS and near edge X-ray absorption fine structure (NEXAFS) measurements were carried out for evaluation of sp2/sp3 ratio. Since GCIB deposit its kinetic energy at local area, it leads to formation of high energy density state on surface. From XPS analysis, it was shown that sp3 contents in carbon films increased with increasing acceleration voltage (Va) and it showed highest value at Va of 10 kV. NEXAFS measurements also showed decrease of sp2 content at Va of 10 kV. GCIB irradiations can assist to form sp3 rich layer on amorphous carbon surface.
{"title":"Increase of sp3 content in a-C films with gas cluster ion beam bombardments; XPS and NEXAFS study","authors":"N. Toyoda, Asahi Kimura, I. Yamada","doi":"10.1109/IIT.2014.6939967","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939967","url":null,"abstract":"Gas cluster ion beams (GCIB) were used for surface modification of amorphous carbon (a-C) or tetrahedral carbon (ta-C) films, and in-vacuum XPS and near edge X-ray absorption fine structure (NEXAFS) measurements were carried out for evaluation of sp2/sp3 ratio. Since GCIB deposit its kinetic energy at local area, it leads to formation of high energy density state on surface. From XPS analysis, it was shown that sp3 contents in carbon films increased with increasing acceleration voltage (Va) and it showed highest value at Va of 10 kV. NEXAFS measurements also showed decrease of sp2 content at Va of 10 kV. GCIB irradiations can assist to form sp3 rich layer on amorphous carbon surface.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"107 3","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72582262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939955
K. V. Rao, F. Khaja, C. Ni, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, A. Mayur, R. Hung, V. Banthia, A. Brand, N. Variam
Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.
{"title":"Damage engineered Se implant for NMOS TiSix contact resistivity reduction","authors":"K. V. Rao, F. Khaja, C. Ni, S. Sharma, B. Zheng, J. Ramalingam, J. Gelatos, J. Lei, A. Mayur, R. Hung, V. Banthia, A. Brand, N. Variam","doi":"10.1109/IIT.2014.6939955","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939955","url":null,"abstract":"Low specific contact resistivity (7E-9 Ohm.cm2) was achieved for contacts with TiSix to in-situ epitaxially doped Si:P n-SD regions by use of Se implantation prior to Ti deposition. The key to this achievement is the optimization of implant energy and dose, and use of millisecond laser anneal to heal the implant damage, while allowing sufficient inter-mixing of Ti, Si, Se and P atoms across a smooth TiSix/Si:P interface, to realize the SBH-lowering benefits of Se.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"26 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84040976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940029
S. Ninomiya, H. Sasaki, K. Inada, K. Kato, Yoshitaka Amano, Kazuhiro Watanabe, M. Kabasawa, H. Kariya, M. Tsukihara, K. Ueno
In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE has adopted an electrostatic and symmetric, parallelizing lens system, the concept of which is already used in the MC3-II, a medium-current ion implanter, and the SHX, a single-wafer high-current implanter. This system provides very good uniformity, even when a large amount of outgassing from photoresist materials is generated. Since the ion beam energy is so high at the lens system, a compound electrostatic parallelizing lens system is introduced. Beam angles have been controlled within 0.05° for any recipe in experiments with the electrostatic parallelizing lens system. Another beam line element specifically adopted in the S-UHE is an electric quadrupole lens installed between the two dipole magnets, in order to suppress beam current loss. This electric lens can easily form achromatic ion beam transportation without any significant deformation of the magnetic field.
{"title":"Symmetric beam line technique for a single-wafer ultra-high energy ion implanter","authors":"S. Ninomiya, H. Sasaki, K. Inada, K. Kato, Yoshitaka Amano, Kazuhiro Watanabe, M. Kabasawa, H. Kariya, M. Tsukihara, K. Ueno","doi":"10.1109/IIT.2014.6940029","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940029","url":null,"abstract":"In order to fabricate highly sensitive image sensors, ultra-high energy ion beams, such as 5 MeV of boron, are required. SEN has developed the S-UHE, a single-wafer ultra-high energy ion implanter, to obtain such ultra-high energy beams. The S-UHE has adopted an electrostatic and symmetric, parallelizing lens system, the concept of which is already used in the MC3-II, a medium-current ion implanter, and the SHX, a single-wafer high-current implanter. This system provides very good uniformity, even when a large amount of outgassing from photoresist materials is generated. Since the ion beam energy is so high at the lens system, a compound electrostatic parallelizing lens system is introduced. Beam angles have been controlled within 0.05° for any recipe in experiments with the electrostatic parallelizing lens system. Another beam line element specifically adopted in the S-UHE is an electric quadrupole lens installed between the two dipole magnets, in order to suppress beam current loss. This electric lens can easily form achromatic ion beam transportation without any significant deformation of the magnetic field.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77772644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939767
K. Suguro
Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.
{"title":"The prospects and challenges in junction process technology for advanced semiconductor devices","authors":"K. Suguro","doi":"10.1109/IIT.2014.6939767","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939767","url":null,"abstract":"Historical background of ion implantation technology in semiconductor devices is reviewed in conjunction with electrical activation of impurity atoms, annealing of primary defects introduced during ion implantation as well as the diffusion of impurity atoms. Next the prospects and challenges in junction process technology for advanced semiconductor devices are discussed.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77836933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940013
A. Joshi, S. Prussin
Here we provide a unified treatment for defect analysis by leveraging ideal data provided by ASTM Standard F723. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) data has been used to directly measure mobility profiles. Deviations of these values from the ideal defect-free, and fully relaxed systems provides a usable measure of the total effect of defects and/or strain in doped silicon materials.
{"title":"Determining defect & strain effects on active layer mobility","authors":"A. Joshi, S. Prussin","doi":"10.1109/IIT.2014.6940013","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940013","url":null,"abstract":"Here we provide a unified treatment for defect analysis by leveraging ideal data provided by ASTM Standard F723. Active Layer Parametrics, Inc.'s Differential Hall Effect Method (DHE) data has been used to directly measure mobility profiles. Deviations of these values from the ideal defect-free, and fully relaxed systems provides a usable measure of the total effect of defects and/or strain in doped silicon materials.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"48 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80445490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939964
Shao-Yu Hu, G. Lin, Ching-I Li, Hong Lu, Z. Wan
Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.
{"title":"The influence of dose rate on ultra shallow surface dopant profile","authors":"Shao-Yu Hu, G. Lin, Ching-I Li, Hong Lu, Z. Wan","doi":"10.1109/IIT.2014.6939964","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939964","url":null,"abstract":"Dose rates were widely studied in ion implanter history due to the influence on semiconductor device performance. Several major parameters can be adjusted by dose rate, including implant damage, doping profile distribution, and doping activation. As devices shrink, ultra shallow surface doping becomes more significant on device performance. In this study, a special phenomenon of Boron distribution was investigated. Some parameters for dose rate tuning were also used to adjust the surface profile, which were potentially knobs for tuning device performance improvement.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88670022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939983
J. Springer, W. Wriggins, Juergen Kusterer, K. Zotter, M. Current
Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices.
{"title":"Elastomers for control of wafer temperature in the ≈50°C range during high dose ion implantation","authors":"J. Springer, W. Wriggins, Juergen Kusterer, K. Zotter, M. Current","doi":"10.1109/IIT.2014.6939983","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939983","url":null,"abstract":"Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"100 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80650213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6939992
Ching-I Li, G. Lin, Rekha Padmanabhan, G. N. Cai, Z. Wan, W. Platow, K. Saadatmand, Po-Heng Lin, Chih-Ming Tai, R. Chang
In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.
{"title":"Integrated divergent beam for FinFET Conformal Doping","authors":"Ching-I Li, G. Lin, Rekha Padmanabhan, G. N. Cai, Z. Wan, W. Platow, K. Saadatmand, Po-Heng Lin, Chih-Ming Tai, R. Chang","doi":"10.1109/IIT.2014.6939992","DOIUrl":"https://doi.org/10.1109/IIT.2014.6939992","url":null,"abstract":"In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation condition called Integrated Divergent Beam (IDB) that consists of various implant angle distribution. We perform the IDB Arsenic implantation by Monte-Carlo simulation.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"90 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76705425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-30DOI: 10.1109/IIT.2014.6940001
R. Chang, Chih-hung Lin, Hong Lu, Z. Wan
Electrical deactivation of phosphorus was investigated using silicon-on-insulator (SOI) wafers with uniform phosphorus profiles prepared by ion implantation and annealing at high temperatures. Evident depletion of phosphorus was observed in the bulk region of the active silicon layer when electrical deactivation of phosphorus occurred at low temperatures. Such phenomenon was due to uphill diffusion of phosphorus toward the surface. Retrograde profiles of excess interstitials generated during deactivation were proposed to explain the redistribution of phosphorus.
{"title":"Phosphorus redistribution caused by electrical deactivation of phosphorus at low temperatures","authors":"R. Chang, Chih-hung Lin, Hong Lu, Z. Wan","doi":"10.1109/IIT.2014.6940001","DOIUrl":"https://doi.org/10.1109/IIT.2014.6940001","url":null,"abstract":"Electrical deactivation of phosphorus was investigated using silicon-on-insulator (SOI) wafers with uniform phosphorus profiles prepared by ion implantation and annealing at high temperatures. Evident depletion of phosphorus was observed in the bulk region of the active silicon layer when electrical deactivation of phosphorus occurred at low temperatures. Such phenomenon was due to uphill diffusion of phosphorus toward the surface. Retrograde profiles of excess interstitials generated during deactivation were proposed to explain the redistribution of phosphorus.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"392 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78040420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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