Alternative graphene devices: beyond field effect transistors

Abstract

The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has implications on potential entry points of graphene as an add-on to mainstream silicon technology, which will be discussed in the talk.