Self-Aligned Fin-On-Oxide (FOO) FinFETs for Improved SCE Immunity and Multi-VTH Operation on Si Substrate

Xiaolong Ma, H. Yin, Peizhen Hong, Weijia Xu
{"title":"Self-Aligned Fin-On-Oxide (FOO) FinFETs for Improved SCE Immunity and Multi-VTH Operation on Si Substrate","authors":"Xiaolong Ma, H. Yin, Peizhen Hong, Weijia Xu","doi":"10.1149/2.0071504SSL","DOIUrl":null,"url":null,"abstract":"The paper proposed a simple and novel approach to fabricate Fin-On-Oxide (FOO) FinFETs on silicon (Si) substrates for improved electrical characteristics in scaled devices. Based on conventional bulk-Si FinFET integration flow, a special step of a fin notch etching is performed, followed by a process of liner oxidation and isolation-oxide filling and recess. The fin above the notch is physically isolated from the substrate and turns into a self-aligned FOO structure. The fabricated p-type FOO FinFETs have demonstrated excellent short-channel effect (SCE) characteristics with subthreshold slope (SS) of 69 mV/dec and drain-induced barrier lowering (DIBL) of 22 mV/V for a physical gate length (LG) of 27 nm. For 14 nm devices, SS of 86 mV/dec and DIBL of 106 mV/V have been achieved, which are much better than those of the bulk-silicon FinFET counterpart with similar process. Meanwhile, the steady threshold voltage (VTH) shifting by the substrate biasing is realized in the FOO FinFET without performance degradations. The linearity of the VTH on the bias voltage is −6 mV/V. The self-aligned FOO-FinFET with a simple process provides a promising method to improve the SCE immunity as well as provides the multi-VTH operation for the scaled FinFET on Si substrates for future ultra-low power circuit applications. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0071504ssl] All rights reserved.","PeriodicalId":11423,"journal":{"name":"ECS Solid State Letters","volume":"92 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0071504SSL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

The paper proposed a simple and novel approach to fabricate Fin-On-Oxide (FOO) FinFETs on silicon (Si) substrates for improved electrical characteristics in scaled devices. Based on conventional bulk-Si FinFET integration flow, a special step of a fin notch etching is performed, followed by a process of liner oxidation and isolation-oxide filling and recess. The fin above the notch is physically isolated from the substrate and turns into a self-aligned FOO structure. The fabricated p-type FOO FinFETs have demonstrated excellent short-channel effect (SCE) characteristics with subthreshold slope (SS) of 69 mV/dec and drain-induced barrier lowering (DIBL) of 22 mV/V for a physical gate length (LG) of 27 nm. For 14 nm devices, SS of 86 mV/dec and DIBL of 106 mV/V have been achieved, which are much better than those of the bulk-silicon FinFET counterpart with similar process. Meanwhile, the steady threshold voltage (VTH) shifting by the substrate biasing is realized in the FOO FinFET without performance degradations. The linearity of the VTH on the bias voltage is −6 mV/V. The self-aligned FOO-FinFET with a simple process provides a promising method to improve the SCE immunity as well as provides the multi-VTH operation for the scaled FinFET on Si substrates for future ultra-low power circuit applications. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0071504ssl] All rights reserved.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
自对准Fin-On-Oxide (FOO) finfet用于改善SCE抗扰度和在Si衬底上的多vth操作
本文提出了一种在硅(Si)衬底上制作氧化Fin-On-Oxide (FOO) finfet的简单新颖方法,以改善缩放器件的电气特性。在传统的块硅FinFET集成流程的基础上,进行了翅片缺口刻蚀的特殊步骤,然后进行了衬里氧化和隔离-氧化物填充和凹槽的过程。缺口上方的翅片与基板物理隔离,并变成自对准的FOO结构。制备的p型FOO finfet具有优异的短沟道效应(SCE)特性,在27 nm的物理栅长(LG)下,亚阈值斜率(SS)为69 mV/dec,漏极诱导势垒降低(DIBL)为22 mV/V。对于14 nm器件,SS为86 mV/dec, DIBL为106 mV/V,大大优于同类工艺的体硅FinFET器件。同时,在不降低性能的情况下,通过衬底偏置实现阈值电压(VTH)的稳定移位。VTH对偏置电压的线性度为- 6 mV/V。采用简单工艺的自对准fo -FinFET提供了一种有前途的方法来提高SCE抗扰度,并为Si衬底上的缩放FinFET提供多vth操作,用于未来的超低功耗电路应用。©作者2015。由ECS出版。这是一篇基于知识共享署名4.0许可(CC BY, http://creativecommons.org/licenses/by/4.0/)的开放获取文章,该许可允许在任何媒体上不受限制地重复使用该作品,前提是正确引用原始作品。[DOI: 10.1149/2.0071504ssl]版权所有。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
ECS Solid State Letters
ECS Solid State Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED
自引率
0.00%
发文量
0
期刊最新文献
Solution-Growth ZnO Nanorods for Light Extraction in GaN-Based Flip-Chip LEDs Self-Ordered Aluminum Anodizing in Phosphonoacetic Acid and Its Structural Coloration Strong Diffusion Suppression of Low Energy–Implanted Phosphorous in Germanium by N2 Co-Implantation Compact Analytical Model for One Dimensional Carbon Nanotube Field Effect Transistor (CNTFET) Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1