A study of thermal, voltage, and photoinduced effects on the external quantum efficiency of CuInGaSe2 (CIGS) photovoltaic devices

R. Feist, M. Mills, R. K. Thompson, N. Ramesh
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Abstract

The purpose of this study was to assess the performance of CuInGaSe2 (CIGS) solar cells ranging from 6.9-11.2% efficiency to identify means of improving device performance. One of the main drivers for this work was to take an independent look at elevated operating temperatures associated with BIPV products like Dow's POWERHOUSE™ shingle system for performance differences as a function of system operating temperature independent of increasing efficiency to help future product definition. For three of the four samples we observed a clear lack of dark-light current-voltage (JV) superposition and correspondingly via external quantum efficiency (EQE) measurements an electrical field dependent carrier collection response in the blue regime. By inference this performance indicates the presence of impurities in the device, likely in the CdS film that could present an opportunity to further improve the CIGS device performance.
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热、电压和光致效应对CuInGaSe2 (CIGS)光电器件外量子效率的影响研究
本研究的目的是评估效率在6.9-11.2%之间的CuInGaSe2 (CIGS)太阳能电池的性能,以确定提高器件性能的方法。这项工作的主要推动力之一是独立研究BIPV产品(如陶氏POWERHOUSE瓦板系统)的工作温度升高,以了解系统工作温度与效率无关的性能差异,从而帮助未来的产品定义。对于四个样品中的三个,我们观察到明显缺乏暗-光电流-电压(JV)叠加,相应地,通过外部量子效率(EQE)测量,在蓝色状态下存在电场依赖的载流子收集响应。通过推断,该性能表明器件中存在杂质,可能存在于CdS薄膜中,这可能为进一步提高CIGS器件性能提供了机会。
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