Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management

F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu
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引用次数: 1

Abstract

We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.
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通过外延提升和光管理实现高效率的InAs/GaAs量子点太阳能电池
我们报道了采用3英寸晶圆外延提升法制备的薄膜InAs/GaAs QD太阳能电池,其中包含具有高平面内QD密度的QD外延结构。外部量子效率测量表明在薄膜结构中增强了量子点收获。数值模拟结果表明,用微结构光子光栅代替平面后视镜可以显著提高量子点光电流。介绍了用纳米压印技术在砷化镓晶圆上实现光栅原型的衍射效率测量。
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