Pub Date : 2017-07-02DOI: 10.1109/PVSC.2017.8366791
A. C. Martins, V. Chapuis, A. Virtuani, C. Ballif
Most of the existing solutions for Building Integrated PV (BIPV) are based on conventional crystalline-Silicon (c-Si) module architectures (glass-glass or glass-backsheet) exhibiting a relatively high weight (12–20 kg/m2). We are working on the development of robust and reliable lightweight solutions with a weight target of 6 kg/m2. Using a composite sandwich architecture and high thermal conductivity materials, we show that it is possible to propose lightweight PV modules compliant with the IEe 61215 thermal cycling test. We further show that we are able to upscale the size of the devices from 2-cells up to 16-cell modules.
{"title":"Ultra-Lightweight PV module design for Building Integrated Photovoltaics","authors":"A. C. Martins, V. Chapuis, A. Virtuani, C. Ballif","doi":"10.1109/PVSC.2017.8366791","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366791","url":null,"abstract":"Most of the existing solutions for Building Integrated PV (BIPV) are based on conventional crystalline-Silicon (c-Si) module architectures (glass-glass or glass-backsheet) exhibiting a relatively high weight (12–20 kg/m2). We are working on the development of robust and reliable lightweight solutions with a weight target of 6 kg/m2. Using a composite sandwich architecture and high thermal conductivity materials, we show that it is possible to propose lightweight PV modules compliant with the IEe 61215 thermal cycling test. We further show that we are able to upscale the size of the devices from 2-cells up to 16-cell modules.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"469 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2017-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76814304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-25DOI: 10.1109/PVSC.2017.8366309
Raphael Lachaurne, M. Foldyna, G. Hamon, N. Vaissière, J. Decobert, R. Cariou, P. Cabarrocas, J. Alvarez, J. Kleider
Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. We here propose to evaluate such tandem concept based on inverse metamorphic growth of c-Si(Ge) on GaAs by means of numerical simulation. Electrical and optical models are first faced to experimental realizations of single junction cells to calibrate material parameters and to assess the electrical quality of the epi-SiGe layer. Then the tandem structure is optimized, current matching conditions are given and the benefit of using a 2D grating at the back-side is studied.
{"title":"Inverse Metamorphic III-V/epi-SiGe Tandem Solar Cell Performance Assessed by Optical and Electrical Modeling","authors":"Raphael Lachaurne, M. Foldyna, G. Hamon, N. Vaissière, J. Decobert, R. Cariou, P. Cabarrocas, J. Alvarez, J. Kleider","doi":"10.1109/PVSC.2017.8366309","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366309","url":null,"abstract":"Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. We here propose to evaluate such tandem concept based on inverse metamorphic growth of c-Si(Ge) on GaAs by means of numerical simulation. Electrical and optical models are first faced to experimental realizations of single junction cells to calibrate material parameters and to assess the electrical quality of the epi-SiGe layer. Then the tandem structure is optimized, current matching conditions are given and the benefit of using a 2D grating at the back-side is studied.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"48 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83265346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-25DOI: 10.1109/PVSC.2017.8366525
S. D. Gall, R. Lachaume, E. Torralba, M. Halbwax, V. Magnin, T. E. Assimi, Marin Fouchier, J. Harari, J. Vilcot, C. Cachet-Vivier, S. Bastide
New Si processes based on Metal Assisted Chemical Etching (MACE) are explored for solar cells texturization. Pt and Au are considered as catalysts for MACE of p and n-type Si substrates. 2D band bending modeling at the nanoscale shows that Pt nanoparticles (NPs) make ohmic contacts and induce delocalized etching. Accordingly, cone-shaped macropores, very efficient in reducing the reflectivity $(< 5%)$ are obtained experimentally. On the contrary, Au with n-type Si leads to non-ohmic contacts and localized etching. On this basis, a novel strategy for 3D pattern transfer into Si with patterned nanoporous gold electrodes in a single step is developed.
{"title":"Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applications","authors":"S. D. Gall, R. Lachaume, E. Torralba, M. Halbwax, V. Magnin, T. E. Assimi, Marin Fouchier, J. Harari, J. Vilcot, C. Cachet-Vivier, S. Bastide","doi":"10.1109/PVSC.2017.8366525","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366525","url":null,"abstract":"New Si processes based on Metal Assisted Chemical Etching (MACE) are explored for solar cells texturization. Pt and Au are considered as catalysts for MACE of p and n-type Si substrates. 2D band bending modeling at the nanoscale shows that Pt nanoparticles (NPs) make ohmic contacts and induce delocalized etching. Accordingly, cone-shaped macropores, very efficient in reducing the reflectivity $(< 5%)$ are obtained experimentally. On the contrary, Au with n-type Si leads to non-ohmic contacts and localized etching. On this basis, a novel strategy for 3D pattern transfer into Si with patterned nanoporous gold electrodes in a single step is developed.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78250327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/PVSC.2017.8366106
S. Spataru, P. Hacke, D. Sera
Inactive solar cell regions resulted from their disconnection from the electrical circuit of the cell are considered to most severe type of solar cell cracks, causing the most power loss. In this work, we propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding these inactive solar cell regions. The resulting threshold enables automatic quantification of the cracked region size and estimation of the risk of power loss in the module. We tested the algorithm for detecting inactive cell areas in standard mono and mc-Si, showing the influence of current bias level and camera exposure time on the detection. Last, we examined the correlation between the size of the detected solar cell cracks and the power loss of the module.
{"title":"Automatic Detection of Inactive Solar Cell Cracks in Electroluminescence Images","authors":"S. Spataru, P. Hacke, D. Sera","doi":"10.1109/PVSC.2017.8366106","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366106","url":null,"abstract":"Inactive solar cell regions resulted from their disconnection from the electrical circuit of the cell are considered to most severe type of solar cell cracks, causing the most power loss. In this work, we propose an algorithm for automatic determination of the electroluminescence (EL) signal threshold level corresponding these inactive solar cell regions. The resulting threshold enables automatic quantification of the cracked region size and estimation of the risk of power loss in the module. We tested the algorithm for detecting inactive cell areas in standard mono and mc-Si, showing the influence of current bias level and camera exposure time on the detection. Last, we examined the correlation between the size of the detected solar cell cracks and the power loss of the module.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"4 1","pages":"1421-1426"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80468075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/PVSC.2017.8366631
F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu
We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.
{"title":"Enabling High-Efficiency InAs/GaAs Quantum Dot Solar Cells by Epitaxial Lift-Off and Light Management","authors":"F. Cappelluti, A. Cédola, Arastoo Khalili, F. Elsehrawy, G. Bauhuis, P. Mulder, J. Schermer, G. Bissels, T. Aho, T. Niemi, M. Guina, Dongyoung Kim, Jiang Wu, Huiyun Liu","doi":"10.1109/PVSC.2017.8366631","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366631","url":null,"abstract":"We report thin-film InAs/GaAs QD solar cells fabricated by epitaxial lift-off of 3-inch wafers containing QD epi-structures with high in-plane QD density. External quantum efficiency measurements demonstrate enhanced QD harvesting in the thin-film configuration. Numerical simulations show that remarkably high increase of the QD photocurrent may be achieved by replacing the planar rear mirror with micro-structured photonic gratings. Measurements of diffraction efficiency of grating prototypes realized on GaAs wafers by nanoimprint lithography are presented.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75779703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/PVSC.2017.8366009
J. Munkhammar, J. Widén
This study presents a method for using copulas to model the temporal variability of the clear-sky index. The method utilizes the autocorrelation function and correlated outputs for $N$ time-steps are obtained. Results from the copula model are, in terms of distribution, autocorrelation, step changes and mean daily distribution, compared with the original data set and with an uncorrelated model based on random clear-sky index data. The copula model is shown to be superior to the uncorrelated model in all these aspects.
{"title":"An autocorrelation-based copula model for producing realistic clear-sky index and photovoltaic power generation time-series","authors":"J. Munkhammar, J. Widén","doi":"10.1109/PVSC.2017.8366009","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366009","url":null,"abstract":"This study presents a method for using copulas to model the temporal variability of the clear-sky index. The method utilizes the autocorrelation function and correlated outputs for $N$ time-steps are obtained. Results from the copula model are, in terms of distribution, autocorrelation, step changes and mean daily distribution, compared with the original data set and with an uncorrelated model based on random clear-sky index data. The copula model is shown to be superior to the uncorrelated model in all these aspects.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"199 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76957862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/PVSC.2017.8366437
P. Hacke, S. Spataru, S. Johnston
A fundamental change in the analysis for the accelerated stress testing of thin-film modules is proposed, whereby power changes due to metastability and other effects that may occur due to the thermal history are removed from the power measurement that we obtain as a function of the applied stress factor. In this work, initial thermal treatment of the module is performed before application of the independent variable stress of system voltage so that any temperature-dependent processes (e.g., diffusion) that affect the module power are largely activated beforehand. Secondly, the power of reference modules normalized to an initial state-undergoing the same thermal and light exposure history but without the applied stress factor such as humidity or voltage bias-is subtracted from that of the stressed modules. For better understanding and appropriate application in standardized tests, the method is demonstrated and discussed for potential-induced degradation testing in view of the parallel-occurring but unrelated physical mechanisms that can lead to confounding power changes in the module.
{"title":"Correction for Metastability in the Quantification of PID in Thin-Film Module Testing","authors":"P. Hacke, S. Spataru, S. Johnston","doi":"10.1109/PVSC.2017.8366437","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366437","url":null,"abstract":"A fundamental change in the analysis for the accelerated stress testing of thin-film modules is proposed, whereby power changes due to metastability and other effects that may occur due to the thermal history are removed from the power measurement that we obtain as a function of the applied stress factor. In this work, initial thermal treatment of the module is performed before application of the independent variable stress of system voltage so that any temperature-dependent processes (e.g., diffusion) that affect the module power are largely activated beforehand. Secondly, the power of reference modules normalized to an initial state-undergoing the same thermal and light exposure history but without the applied stress factor such as humidity or voltage bias-is subtracted from that of the stressed modules. For better understanding and appropriate application in standardized tests, the method is demonstrated and discussed for potential-induced degradation testing in view of the parallel-occurring but unrelated physical mechanisms that can lead to confounding power changes in the module.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"29 1","pages":"2819-2822"},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85843964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-06-01DOI: 10.1109/PVSC.2017.8366366
M. Amdemeskel, B. Iandolo, R. S. Davidsen, Ole Hansen, G. Benatto, Nicholas Riedel, P. Poulsen, Sune Thorsteinsson, A. Thorseth, C. Dam-Hansen
Angle resolved optical spectroscopy of photovoltaic (PV) samples gives crucial information on PV panels under realistic working conditions. Here, we introduce measurements of angle resolved light absorption by PV cells, performed indoors using a collimated high radiance broadband light source. Our indoor method offers a significant simplification as compared to measurements by solar trackers. As a proof-of-concept demonstration, we show characterization of black silicon solar cells. The experimental results showed stable and reliable optical responses that makes our setup suitable for indoor, angle resolved characterization of solar cells.
{"title":"Indoor Measurement of Angle Resolved Light Absorption by Black Silicon","authors":"M. Amdemeskel, B. Iandolo, R. S. Davidsen, Ole Hansen, G. Benatto, Nicholas Riedel, P. Poulsen, Sune Thorsteinsson, A. Thorseth, C. Dam-Hansen","doi":"10.1109/PVSC.2017.8366366","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366366","url":null,"abstract":"Angle resolved optical spectroscopy of photovoltaic (PV) samples gives crucial information on PV panels under realistic working conditions. Here, we introduce measurements of angle resolved light absorption by PV cells, performed indoors using a collimated high radiance broadband light source. Our indoor method offers a significant simplification as compared to measurements by solar trackers. As a proof-of-concept demonstration, we show characterization of black silicon solar cells. The experimental results showed stable and reliable optical responses that makes our setup suitable for indoor, angle resolved characterization of solar cells.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87164142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-01DOI: 10.1109/PVSC.2017.8366677
R. S. Davidsen, P. T. Tang, I. Mizushima, Sune Thorsteinsson, P. Poulsen, Jesper Frausig, Ørnulf Nordseth, O. Hansen
We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance below 0.5% across a 156×156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional all-black solar 9-cell panels. The black bus-bars (e.g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency.
{"title":"Numerical Evaluation on the Nano-rod Array on a N-side-up Thin-film GaAs Solar Cells","authors":"R. S. Davidsen, P. T. Tang, I. Mizushima, Sune Thorsteinsson, P. Poulsen, Jesper Frausig, Ørnulf Nordseth, O. Hansen","doi":"10.1109/PVSC.2017.8366677","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366677","url":null,"abstract":"We present the combination of black silicon texturing and blackened bus-bar strings as a potential method for obtaining all-black solar panels, while using conventional, front-contacted solar cells. Black silicon was realized by mask-less reactive ion etching resulting in total, average reflectance below 0.5% across a 156×156 mm2 silicon wafer. Four different methods to obtain blackened bus-bar strings were compared with respect to reflectance, and two of these methods (i.e., oxidized copper and etched solder) were used to fabricate functional all-black solar 9-cell panels. The black bus-bars (e.g., by oxidized copper) have a reflectance below 3% in the entire visible wavelength range. The combination of black silicon cells and blackened bus-bars results in aesthetic, all-black panels based on conventional, front-contacted solar cells without compromising efficiency.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"28 1","pages":"2885-2888"},"PeriodicalIF":0.0,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81714826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-01DOI: 10.1109/PVSC.2017.8366539
G. Nelson, B. Juang, M. Slocum, Z. Bittner, Ramesh B. Lagumavarapu, D. Huffaker, S. Hubbard
The GaAs/GaSb interface misfit design can achieve comparable efficiency to conventional inverted metamorphic multijunction cells at up to 30% cost reduction. In this preliminary work, GaSb single junctions were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare and fine tune the interfacial misfit growth process. Current vs voltage results show that the best homo-epitaxial cell achieved 5.2% under 35-sun concentration. TEM did not reveal any threading dislocations in the hetero-epitaxial cells, however, device results indicated higher non-radiative recombination than expected, likely due to unpassivated surface states. Improvements to cell processing will be explored and more characterization is planned to determine the cause of degraded hetero-epitaxial cell performance.
{"title":"Toward Stationary Concentrator Photovoltaic Panels","authors":"G. Nelson, B. Juang, M. Slocum, Z. Bittner, Ramesh B. Lagumavarapu, D. Huffaker, S. Hubbard","doi":"10.1109/PVSC.2017.8366539","DOIUrl":"https://doi.org/10.1109/PVSC.2017.8366539","url":null,"abstract":"The GaAs/GaSb interface misfit design can achieve comparable efficiency to conventional inverted metamorphic multijunction cells at up to 30% cost reduction. In this preliminary work, GaSb single junctions were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare and fine tune the interfacial misfit growth process. Current vs voltage results show that the best homo-epitaxial cell achieved 5.2% under 35-sun concentration. TEM did not reveal any threading dislocations in the hetero-epitaxial cells, however, device results indicated higher non-radiative recombination than expected, likely due to unpassivated surface states. Improvements to cell processing will be explored and more characterization is planned to determine the cause of degraded hetero-epitaxial cell performance.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"516 1","pages":"2349-2353"},"PeriodicalIF":0.0,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77113463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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