Polyimide Fine-via Etching and Low-damage Surface-modification Process For High-density Fan-out Wafer Level Package

Y. Morikawa, Daisuke Hironiwa, T. Murayama
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引用次数: 2

Abstract

In the last years the number of high performance mobile devices, such as smart phones or tablet PCs, increases widely and accordingly data traffic augments rapidly. Devices for these equipment require high-rate processing capabilities, high-density packaging possibilities and low power consumptions for data-center and servers. Thus the demand for packed semiconductor chips with high density of components is growing. In order to accomplish high-density packaging, miniaturization technology of wiring in heterogeneous Fan-out Wafer Level Packaging (FO-WLP) is needful to multi chip module system fabrication using by the re-distribution layer (RDL) wiring technologies. To obtain the fine vias and line/space in a polyimide film, the PVD sputtering and electro-Cu deposition processes are widely used but there are three major restricting difficulties. The first is that it is difficult to make fine vias and line / space in the FO-WLP process. The second is that PVD sputtering process for high adhesion between Cu and polyimide films is also will be issue by status of surface and surface residue. The third is that surface damage of polyimide by the plasma irradiation (Ions, UV), moisture absorption.In this paper, we report the role of the dry etching to fabricate the RDL. The dry etching has already applied in various RDL fabrication process, such as dry descum process, the surface modification process and so on. Dry descum process is named that the process is the removal of photoresist (PR) residues after photo-lithography. The surface modification process has two major functions. First is the improvement of the interface adhesion of the films. To improve of the adhesion, it is necessary that the change of surface morphology. As one way, the changing of the surface configuration is suggested. To obtain the surface with large roughness, the etching process is recommended that the bombardment characteristics is more effective. As the result, the contact area is increased by the etching, so the adhesion would be improved. Alternatively, the application of the chemical response between films is suggested. To generate the chemical function groups, the etching process is recommended that the chemical response is more effective. These surface morphology is adjusted by dry etching condition. In this study, we focus the control of hydrophilic property using dry etching process. In RDL process, it is important to conduct a pre-treatment of electro-Cu deposition processes. When the polymer surface has hydrophobic characteristic, Cu plating solution would be rejected from the surface of polymer. Then, the plating solution cannot enter the bottom position of channels in polymer films, and the voids may be generated. In the future, these channels would be become reduced in size, therefore the control of hydrophilic property would be focused.
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高密度扇出晶圆级封装的聚酰亚胺细孔蚀刻及低损伤表面修饰工艺
在过去几年中,高性能移动设备(如智能手机或平板电脑)的数量大幅增加,相应的数据流量也迅速增加。用于这些设备的设备需要数据中心和服务器的高速率处理能力、高密度封装可能性和低功耗。因此,对具有高密度元件的封装半导体芯片的需求正在增长。为了实现高密度封装,采用再分布层(RDL)布线技术制造多芯片模块系统需要采用异构扇出晶圆级封装(FO-WLP)布线的小型化技术。为了在聚酰亚胺薄膜上获得良好的通孔和线/空间,PVD溅射和电cu沉积工艺得到了广泛的应用,但存在三个主要的限制困难。首先,在FO-WLP工艺中很难制作精细的过孔和线/空间。其次,PVD溅射工艺对于Cu和聚酰亚胺薄膜之间的高附着力也会受到表面和表面残留状况的影响。其三是聚酰亚胺表面受等离子体辐照(离子、紫外线)、吸湿等损伤。在本文中,我们报道了干刻蚀在RDL制造中的作用。干式蚀刻技术已经应用于各种RDL制造工艺中,如干化工艺、表面改性工艺等。干燥脱胶法是指光刻后去除光刻胶(PR)残留物的工艺。表面改性过程有两个主要作用。首先是薄膜界面附着力的提高。为了提高附着力,必须改变表面形貌。作为一种方法,建议改变表面结构。为了获得粗糙度较大的表面,建议采用轰击特性更有效的刻蚀工艺。结果表明,蚀刻增加了接触面积,从而提高了附着力。另外,建议应用薄膜之间的化学反应。为了生成化学官能团,建议采用化学反应更有效的蚀刻工艺。这些表面形貌是通过干蚀刻条件来调节的。在本研究中,我们重点研究了用干法蚀刻工艺控制材料的亲水性。在RDL工艺中,对电铜沉积过程进行预处理是非常重要的。当聚合物表面具有疏水特性时,镀铜溶液会从聚合物表面被排斥。然后,镀液不能进入聚合物薄膜通道的底部位置,可能会产生空隙。在未来,这些通道的尺寸将变得更小,因此对亲水性的控制将成为重点。
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