High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth

F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen
{"title":"High resistivity layers in InP obtained by Co or Fe ion implantation and LPE regrowth","authors":"F. Vidimari, S. Pellegrino, M. Caldironi, A. Di Paola, R. Chen","doi":"10.1109/ICIPRM.1991.147422","DOIUrl":null,"url":null,"abstract":"The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"29 1","pages":"500-503"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147422","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The possibility of obtaining semiinsulating buried layers in InP by Co or Fe ion implantation and subsequent epitaxial regrowth is discussed. Electrical characteristics measurements of Fe and Co implanted InP indicate resistivities in excess of 10/sup 7/ Omega -cm critical voltages of 2.5 V, and current densities as low as 20 mA/cm/sup 2/ at critical voltage.<>
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通过Co或Fe离子注入和LPE再生获得InP中的高电阻率层
讨论了通过Co或Fe离子注入在InP中获得半绝缘埋层并进行外延再生的可能性。Fe和Co注入InP的电特性测量表明,在2.5 V的临界电压下,电阻率超过10/sup 7/ Omega -cm,电流密度低至20 mA/cm/sup 2/。
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