{"title":"An Analytical Approach to Model the Effects of Diffusion in Space-Charge-Limited Current in Organic Semiconductor Films","authors":"S. M. H. Rizvi, B. Mazhari","doi":"10.1109/icee44586.2018.8937967","DOIUrl":null,"url":null,"abstract":"This paper presents a simple methodology to incorporate the effects of diffusion into conventional space-charge-limited current (SCLC) of a zero built-in potential device. The resultant model is simple and a comparison between theoretical and experimental results are satisfactory.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"113 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/icee44586.2018.8937967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a simple methodology to incorporate the effects of diffusion into conventional space-charge-limited current (SCLC) of a zero built-in potential device. The resultant model is simple and a comparison between theoretical and experimental results are satisfactory.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
